SMD ESD Protection Diode CPDQT3V3U-HF Thru. CPDQT12V0U-HF RoHS Device Halogen Free Features 0402/SOD-882 - IEC61000-4-2 Level 4 ESD protection. 0.041(1.05) 0.037(0.95) - ESD Rating of Class 3 per Human Body Mode. - Low Leakage - Response Time is Typically <1ns 0.026(0.65) 0.022(0.55) Mechanical data - Case: 0402/SOD-882 small outline plastic package. 0.015(0.37) 0.013(0.33) - Terminals: Matte tin plated, solderable per MIL-STD-750, method 2026. 0.012(0.30) 0.008(0.20) - Mounting position: Any. 0.008(0.20) 0.015(0.37) Max. Circuit Diagram 1 0.021(0.54) 0.017(0.44) 2 CATHODE ANODE Dimensions in inches and (millimeter) Maximum Rating (TA=25°C unless otherwise Specifed) Symbol Value Unit Total power dissipation on FR-5 board @TA=25°C (Note 1) PD 150 mW ESD per IEC 61000-4-2(Contact) ESD per IEC 61000-4-2(Air) VESD ±8 ±15 kV Lead Soldering Temperature - Maximum (10 second duration) TL 260 (10 sec.) °C Junction temperature range TJ -55 to +150 °C Storage temperature range TSTG -55 to +150 °C Parameter Notes: 1. FR-5=1.0*0.75*0.62 in. Electrical Characteristics (TA=25°C unless otherwise noted, VF=0.9V Max.@ IF=10mA for all types) VRWN (V) Part No. IR (uA) @VRWM IPP (A) VC (V) @Max IPP (Note 2) (Note 3) (Note 3) Max. VBR (V) @IT IT (mA) Max. PPK (W) (8*20µs) Typ. Typ. CJ (pF) Max. Max. Min. CPDQT3V3U-HF 3.3 2.5 5.0 1 9.8 10.4 102 80 CPDQT5V0U-HF 5.0 1.0 6.2 1 8.7 12.3 107 65 CPDQT12V0U-HF 12 1.0 13.3 1 5.9 23.7 140 30 Notes: 1. Other voltage available upon request. 2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C 3. Surge current waveform per Figure 3. Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 1 QW-JP039 Comchip Technology CO., LTD. SMD ESD Protection Diode RATING AND CHARACTERISTIC CURVES (CPDQT3V3U-HF Thru. CPDQT12V0U-HF) Fig.2- Typical Leakage Current Versus Temperature 7.4 20 7.3 18 7.2 16 7.1 14 7.0 IR, (nA) Breakdown Voltage, (v) (VZ@IZ) Fig.1- Typical Breakdown Voltage Versus Temperature 6.9 6.8 10 8 6.7 6 6.6 6.5 4 6.4 2 6.3 0 -55 +25 +150 -55 +25 Temperature, (°C) Fig.3- 8/20us Peak Pulse Current Waveform Acc. IEC 6100-4-5 Fig.4- Nomalized Junction Capacitance Voltage vs. Reverse Voltage Peak Valur Ipp e-t 80% 60% 40% 13 Test Waveform parameters tf=8us td=20us 12 11 Clamping Voltage, VC(V) Ta=25°C 100% td= t Ipp/2 10 9 8 7 6 5 4 20% Waveform parameters: tr=8µs td=20µs 3 0% 2 0 +150 Temperature, (°C) 120% Percentage of Ipp 12 5 10 15 20 25 30 0 Time, (us) 5 10 15 20 PEAK Pulse Current-Ipp, (A) Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 2 QW-JP039 Comchip Technology CO., LTD. Comchip SMD ESD Protection Diode SMD Diode Specialist Marking Code Product marking code Marking Code CPDQT3V3U-HF E CPDQT5V0U-HF G CPDQT12V0U-HF H ∑ : Month Code 3 G M Part Number X XX 1 2 “ • ” or “•• ” or “–” :Traceablity code Month Code: Month Odd Year (per A.D.) Even Year (per A.D.) Month Odd Year (per A.D.) Even Year (per A.D.) Jan 1 E Jul 7 N Feb 2 F Aug 8 P Wer 3 H Sep 9 U Apr 4 J Oct T X May 5 K Nov V Y Jun 6 L Dec C Z Suggested PAD Layout 0402/SOD-882 SIZE (mm) (inch) A 0.700 0.028 B 0.400 0.016 C 0.700 0.028 D 1.100 0.043 E 0.300 0.012 D A E C B Standard Packaging REEL PACK Case Type 0402/SOD-882 REEL Reel Size ( pcs ) (inch) 10,000 7 Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 3 QW-JP039 Comchip Technology CO., LTD.