Data Sheet - Diodes Incorporated

A Product Line of
Diodes Incorporated
Green
FZT757
300V PNP HIGH VOLTAGE TRANSISTOR IN SOT223
Features
Mechanical Data
•
•
•
BVCEO > -300V
IC = -0.5A Continuous Current
ICM = -1A Peak Pulse Current
•
•
•
•
Complementary NPN Type: FZT657
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
•
Case: SOT223
•
Case Material: Molded Plastic. “Green” Molding Compound;
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminals: Finish - Matte Tin Plated Leads; Solderable per
MIL-STD-202, Method 208
•
Weight: 0.112 grams (Approximate)
UL Flammability Rating 94V-0
SOT223
C
E
B
C
C
B
E
Top View
Top View
Pin-Out
Device Symbol
Ordering Information (Note 4)
Product
FZT757TA
Notes:
Compliance
AEC-Q101
Marking
FZT757
Reel Size (inches)
7
Tape Width (mm)
12
Quantity per Reel
1,000
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-Free, "Green"
and Lead-Free.
3. Halogen- and Antimony-Free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT223
FZT
757
FZT757
Document Number DS33165 Rev. 6 - 2
W
W
Y
FZT 757 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01~53)
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A Product Line of
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FZT757
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
Value
-300
-300
-7
-0.5
-1
Unit
V
V
V
A
A
Value
3.0
2.0
1.6
1.2
41.7
62.5
78.1
104
12.9
-55 to +150
Unit
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
Symbol
(Note 5)
(Note 6)
(Note 7)
(Note 8)
(Note 5)
(Note 6)
(Note 7)
(Note 8)
(Note 9)
PD
RθJA
RθJL
TJ, TSTG
W
°C/W
°C/W
°C
ESD Ratings (Note 10)
Symbol
Value
Unit
Electrostatic Discharge - Human Body Model
Characteristic
ESD HBM
4,000
V
JEDEC Class
3A
Electrostatic Discharge - Machine Model
ESD MM
400
V
C
Notes:
5. For a device mounted with the collector lead on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under
still air conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper.
7. Same as Note 5, except the device is mounted on 25mm x 25mm 1oz copper.
8. Same as Note 5, except the device is mounted on minimum recommended pad layout.
9. Thermal resistance from junction to solder-point (at the end of the collector lead).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
FZT757
Document Number DS33165 Rev. 6 - 2
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FZT757
10
VCE(sat)
IC Collector Current (A)
IC Collector Current (A)
Thermal Characteristics and Derating Information
Limit
1
DC
1s
100ms
100m
10ms
Tamb=25°C
25mm x 25mm
2oz FR4
10m
10
VCE(sat)
Limit
1
DC
1s
100ms
10ms
100m
1ms
100µs
1
T amb=25°C
10m
10
Safe Operating Area
50
Tamb=25°C
60
25mm x 25mm
2oz FR4
50
D=0.5
30
20
Single Pulse
D=0.2
D=0.05
10
0
100µ
D=0.1
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Thermal Resistance (°C/W)
70
Thermal Resistance (°C/W)
10
VCE Collector-Emitter Voltage (V)
Safe Operating Area
100
50mm x 50mm
2oz FR4
10
25mm x 25mm
2oz FR4
1
100µ
1m
10m 100m
1
10
100
Pulse Width (s)
1k
Max Power Dissipation (W)
Single Pulse
T amb=25°C
Tamb=25°C
40
30
D=0.5
20
Document Number DS33165 Rev. 6 - 2
Single Pulse
D=0.2
10
D=0.05
0
100µ
D=0.1
1m
10m 100m
1
10
100
1k
Pulse Width (s)
3.0
50mm x 50mm
2oz FR4
2.5
2.0
25mm x 25mm
2oz FR4
1.5
1.0
0.5
0.0
Pulse Power Dissipation
FZT757
50mm x 50mm
2oz FR4
Transient Thermal Impedance
Transient Thermal Impedance
Max Power Dissipation (W)
100µs
1
VCE Collector-Emitter Voltage (V)
40
1ms
50mm x 50mm
2oz FR4
0
20
40
60
80
100 120 140 160
Temperature (°C)
Derating Curve
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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 11)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage (Note 11)
Base-Emitter Saturation Voltage (Note 11)
Base-Emitter Turn-On Voltage (Note 11)
DC Current Gain (Note 11)
Current Gain-Bandwidth Product
Output Capacitance
Note:
Symbol
BVCBO
BVCEO
BVEBO
Min
-300
-300
-7
Typ
−
−
−
Max
−
−
−
Unit
V
V
V
ICBO
−
<1
-100
nA
IEBO
−
<1
-100
nA
VEB = -5.6V
VCE(sat)
VBE(sat)
VBE(on)
−
−
−
−
−
-0.5
-1.0
-1.0
V
V
V
IC = -100mA, IB = -10mA
IC = -100mA, IB = -10mA
IC = -100mA, VCE = -5V
−
40
−
−
50
−
−
fT
30
−
−
MHz
Cobo
−
−
20
pF
hFE
Test Condition
IC = -100µA
IC = -10mA
IE = -100µA
VCB = -200V
IC = -10mA, VCE = -5V
−
IC = -100mA, VCE = -5V
IC = -10mA, VCE = -20V,
f = 20MHz
VCB = -20V, f = 1MHz
11. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.
FZT757
Document Number DS33165 Rev. 6 - 2
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FZT757
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
FZT757
Document Number DS33165 Rev. 6 - 2
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FZT757
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
D
b1
Q
C
E
Gauge
Plane
Seating
Plane
e1
0.25
b
A1
L
0°
-1
0°
e
A
E1
SOT223
Dim Min Max Typ
A
1.55 1.65 1.60
A1 0.010 0.15 0.05
b
0.60 0.80 0.70
b1
2.90 3.10 3.00
C
0.20 0.30 0.25
D
6.45 6.55 6.50
E
3.45 3.55 3.50
E1
6.90 7.10 7.00
e
4.60
e1
2.30
L
0.85 1.05 0.95
Q
0.84 0.94 0.89
All Dimensions in mm
7°
7°
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1
Y1
Dimensions Value (in mm)
C
2.30
C1
6.40
X
1.20
X1
3.30
Y
1.60
Y1
1.60
Y2
8.00
C1 Y2
Y
X
Note:
C
For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between
device terminals and PCB tracking.
FZT757
Document Number DS33165 Rev. 6 - 2
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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FZT757
Document Number DS33165 Rev. 6 - 2
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