ZXTN4004ZTA - Diodes Incorporated

A Product Line of
Diodes Incorporated
ZXTN4004Z
150V NPN LED DRIVING TRANSISTOR IN SOT89
Features
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Mechanical Data
BVCEO > 150V
IC = 1A High Continuous Current
hFE > 100 for IC = 150mA, VCE = 0.25V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
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Case: SOT89
Case Material: Molded Plastic. “Green” Molding Compound;
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads; Solderable per
MIL-STD-202, Method 208
Weight: 0.055 grams (Approximate)
Applications

LED TV Backlight
SOT89
C
E
C
C
B
B
E
Top View
Device Symbol
Top View
Pin-Out
Ordering Information (Notes 4 & 5)
Product
ZXTN4004ZTA
ZXTN4004ZQTA
Notes:
Compliance
AEC-Q101
Automotive
Marking
1R8
1R8
Reel size (inches)
7
7
Tape width (mm)
12
12
Quantity per reel
1,000 units
1,000 units
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green"
and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT89
1R8 = Product type Marking Code
ZXTN4004Z
Document Number: DS35457 Rev: 2 - 2
1 of 6
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May 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN4004Z
Absolute Maximum Ratings (@TA = +25°C unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
Value
200
150
7
1
3
500
Unit
V
V
V
A
A
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient Air
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
Symbol
(Note 6)
(Note 7)
(Note 8)
(Note 6)
(Note 7)
(Note 8)
Value
1
1.5
2.0
125
83
60
PD
RθJA
(Note 9)
Unit
W
°C/W
RθJL
13
°C/W
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 10)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
6. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
7. Same as Note 6, except the device is mounted on 25mm x 25mm 1oz copper.
8. Same as Note 6, except the device is mounted on 50mm x 50mm 1oz copper.
9. Thermal resistance from junction to solder-point (on the exposed collector pad).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTN4004Z
Document Number: DS35457 Rev: 2 - 2
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Thermal Characteristics and Derating Information
Thermal Resistance (°C/W)
Max Power Dissipation (W)
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
Temperature (°C)
120
100
80
D=0.5
60
40
Single Pulse
D=0.2
D=0.05
20
0
100µ
D=0.1
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
Derating Curve
Max Power Dissipation (W)
100
Single Pulse. T amb=25°C
10
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
140.0
3
T amb=25°C
120.0
100.0
80.0
1oz copper
60.0
40.0
Maximum Power (W)
Thermal Resistance (°C/W)
Pulse Power Dissipation
2oz copper
0
500
1000
1500
2000
2500
Copper Area (sqmm)
ZXTN4004Z
Document Number: DS35457 Rev: 2 - 2
2oz copper
2
1oz copper
1
0
T amb=25°C
0
500
1000
1500
2000
2500
Copper Area (sqmm)
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A Product Line of
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ZXTN4004Z
Electrical Characteristics
(@TA = +25°C unless otherwise specified.)
Characteristic
Collector-Emitter Breakdown Voltage (Note 11)
Collector-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Symbol
BVCEO
BVCBO
ICBO
ICES
IEBO
Min
150
200
-
Typ
175
310
<1
<1
<1
Max
50
50
50
Unit
V
V
nA
nA
nA
Static Forward Current Transfer Ratio (Note 11)
hFE
200
60
100
-
-
-
-
-
-
0.71
512
426
3413
321
65
294
0.95
0.25
-
Base-Emitter Turn-On Voltage (Note 11)
Collector-Emitter Saturation Voltage (Note 11)
Delay Time
Rise Time
Storage Time
Fall Time
Storage Time
Fall Time
Note:
VBE(on)
VCE(sat)
t(d)
t(r)
t(s)
t(f)
t(s)
t(f)
V
V
ns
ns
ns
ns
ns
ns
Test Condition
IC = 10mA
IC = 100µA
VCB = 150V
VCE = 150V
VEB = 7V
IC = 30mA, VCE = 5V
IC = 85mA, VCE = 0.20V
IC = 150mA, VCE = 0.25V
IC = 150mA, VCE = 0.25V
IC = 100mA, IB = 5mA
VCC = 120V, IC = 150mA,
-IB2 = 1.5mA, VCE(ON) = 0.25V
VCC = 120V, IC = 150mA,
-IB2 = 1.5mA, VCE(ON) = 4V
11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Electrical Characteristics
(@TA = +25°C unless otherwise specified.)
1.0
VCE=0.25V
125°C
VCE=0.25V
600
400
25°C
300
200
-55°C
25°C
0.8
85°C
500
VBE(on) (V)
Typical Gain (hFE)
700
-55°C
0.6
125°C
0.4
100
85°C
0
100µ
1m
10m
100m
0.2
100µ
1
1m
IC Collector Current (A)
10m
100m
1
IC Collector Current (A)
hFE v IC
VBE(on) v IC
30
f = 1MHz
Capacitance (pF)
25
20
15
Cobo
10
5
0
100m
1
10
100
Voltage(V)
Capacitance v Voltage
ZXTN4004Z
Document Number: DS35457 Rev: 2 - 2
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A Product Line of
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
D1
0
.20
R0
c
SOT89
Dim Min Max
Typ
A
1.40 1.60
1.50
B
0.50 0.62
0.56
B1 0.42 0.54
0.48
c
0.35 0.43
0.38
D
4.40 4.60
4.50
D1 1.62 1.83 1.733
D2 1.61 1.81
1.71
E
2.40 2.60
2.50
E2 2.05 2.35
2.20
e
1.50
H
3.95 4.25
4.10
H1 2.63 2.93
2.78
L
0.90 1.20
1.05
L1 0.327 0.527 0.427
z
0.20 0.40
0.30
All Dimensions in mm
H
E
B1
L
B
e
D2
8°
(4X
)
H1
E2
A
L1
D
z
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X2
Dimensions
Y4
X
Y
C
G
X
X1
X2
Y
Y1
Y2
Y3
Y4
Y3
Y1
G
Y2
X1
Value
(in mm)
1.500
0.244
0.580
0.760
1.933
1.730
3.030
1.500
0.770
4.530
C
Note: For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between device
terminals and PCB tracking.
ZXTN4004Z
Document Number: DS35457 Rev: 2 - 2
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ZXTN4004Z
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for
use provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
www.diodes.com
ZXTN4004Z
Document Number: DS35457 Rev: 2 - 2
6 of 6
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May 2015
© Diodes Incorporated