DZTA42 300V NPN HIGH VOLTAGE TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 300V • • IC = 500mA high Collector Current • • • 2W Power Dissipation Low Saturation Voltage VCE(sat) < 500mV @ 20mA • • Complementary PNP Type: DZTA92 • • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Case: SOT223 Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 • Weight: 0.112 grams (approximate) Applications SOT223 • Switch-Mode Power Supplies (SMPS) • Video output stages • Motor driver C B E Top View Top View Pin-Out Device Symbol Ordering Information (Note 4) Product DZTA42-13 Notes: Compliance AEC-Q101 Marking K3M Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 2,500 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html Marking Information (Top View) YWW K3M DZTA42 Datasheet Number: DS30582 Rev. 6 - 2 K3M = Product Type Marking Code YWW = Date Code Marking Y = Last digit of year ex: 4 = 2014 WW = Week code 01 - 52 1 of 7 www.diodes.com January 2014 © Diodes Incorporated DZTA42 Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol Value Unit Collector-Base Voltage Characteristic VCBO 300 V Collector-Emitter Voltage VCEO 300 V VEBO 6 V Emitter-Base Voltage Collector Current IC 500 mA Base Current IB 100 mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Power Dissipation (Note 5) (Note 6) PD Thermal Resistance, Junction to Ambient (Note 5) (Note 6) RθJA Thermal Resistance, Junction to Leads (Note 7) Operating and Storage Temperature Range Value 2 1 Unit W 62 125 °C/W RθJL 19.4 °C/W TJ, TSTG -65 to +150 °C ESD Ratings (Note 8) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 4,000 400 Unit V V JEDEC Class 3A C 5. For a device mounted with the collector lead on 50mm x 50mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 6. Same as note (5), except mounted on minimum recommended pad (MRP) layout. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. DZTA42 Datasheet Number: DS30582 Rev. 6 - 2 2 of 7 www.diodes.com January 2014 © Diodes Incorporated DZTA42 160 60 50mm x 50mm 1oz Cu Tamb = 25°C 50 40 Maximum Power (W) Thermal Resistance (°C/W) Thermal Characteristics and Derating Information D=0.5 30 20 D=0.2 Single Pulse D=0.05 10 D=0.1 0 100µ 1m 10m 100m 1 10 100 1k 120 Single pulse 100 80 60 40 20 0 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Max Power Dissipation (W) 50mm x 50mm 1oz Cu Tamb = 25°C 140 Pulse Power Dissipation 50mm x 50mm 1oz Cu 2.0 1.5 1.0 0.5 0.0 0 20 40 60 80 100 120 140 160 Temperature (°C) Derating Curve DZTA42 Datasheet Number: DS30582 Rev. 6 - 2 3 of 7 www.diodes.com January 2014 © Diodes Incorporated DZTA42 Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO 300 — — V IC = 100µA, IE = 0 Collector-Emitter Breakdown Voltage (Note 9) BVCBO 300 — — V IC = 1mA, IB = 0 Emitter-Base Breakdown Voltage BVEBO 6 — — V IE = 100µA, IC = 0 Collector-Base Cut-off Current ICBO — — 0.1 µA VCB = 200V, IE = 0 Emitter-Base Cut-off Current IEBO — — 0.1 µA VEB = 6V, IC = 0 ON CHARACTERISTICS (Note 9) Collector-Emitter Saturation Voltage VCE(sat) — — 0.5 V IC = 20mA, IB = 2mA Base-Emitter Saturation Voltage VBE(sat) — — 0.9 V IC = 20mA, IB = 2mA hFE 25 40 — — — — IC = 1mA, VCE = 10V IC = 10mA, VCE = 10V 40 — — IC = 30mA, VCE = 10V Static Forward Current Transfer Ratio SMALL SIGNAL CHARACTERISTICS Transition Frequency fT 50 — — MHz IC = 10mA, VCE = 20V f = 100MHz Output Capacitance Cobo — — 3 pF VCB = 20V, f = 1MHz Note: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.) 0.2 250 VCE = 5V IB = 8mA 0.15 200 IB = 6mA hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (A) IB = 10mA IB = 4mA 0.1 IB = 2mA IB = 1mA 0.05 T A = 150 °C 150 TA = 85°C T A = 25°C 100 TA = -55°C 50 0 0 1 2 3 4 5 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 1 Typical Collector Current vs. Collector-Emitter Voltage DZTA42 Datasheet Number: DS30582 Rev. 6 - 2 4 of 7 www.diodes.com 0 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Figure 2 Typical DC Current Gain vs. Collector Current January 2014 © Diodes Incorporated DZTA42 VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0.5 IC/IB = 10 0.4 0.3 0.2 TA = 150°C TA = 85°C T A = 25°C 0.1 T A = -55°C 0 0.01 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Figure 4 Typical Base-Emitter Turn-On Voltage vs. Collector Current 120 1.2 f = 1MHz IC/IB = 10 100 1 CAPACITANCE (pF) VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Figure 3 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1 0.8 0.6 T A = -55°C TA = 25°C 0.4 80 60 Cibo 40 TA = 85°C 20 0.2 Cobo 0 0.01 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Figure 5 Typical Base-Emitter Saturation Voltage vs. Collector Current 0 0.01 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Figure 6 Typical Capacitance Characteristics fT, GAIN-BANDWIDTH PRODUCT (MHz) 200 160 120 80 VCE = 20V f = 100MHz 40 0 0 20 40 60 80 100 IC, COLLECTOR CURRENT Figure 7 Typical Gain-Bandwidth Product vs. Collector Current DZTA42 Datasheet Number: DS30582 Rev. 6 - 2 5 of 7 www.diodes.com January 2014 © Diodes Incorporated DZTA42 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. SOT223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b1 2.90 3.10 3.00 b2 0.60 0.80 0.70 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e — — 4.60 e1 — — 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm A A1 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 Y1 C1 Y2 X2 Note: Dimensions X1 X2 Y1 Y2 C1 C2 Value (in mm) 3.3 1.2 1.6 1.6 6.4 2.3 C2 For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between device terminals and PCB tracking. DZTA42 Datasheet Number: DS30582 Rev. 6 - 2 6 of 7 www.diodes.com January 2014 © Diodes Incorporated DZTA42 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2014, Diodes Incorporated www.diodes.com DZTA42 Datasheet Number: DS30582 Rev. 6 - 2 7 of 7 www.diodes.com January 2014 © Diodes Incorporated