BC857BFZ NEW PRODUCT 45V PNP SMALL SIGNAL TRANSISTOR IN DFN0606 Features Mechanical Data BVCEO > -45V IC = -100mA High Collector Current PD = 925mW Power Dissipation 0.36mm2 Package Footprint, 40% Smaller than DFN1006 0.4mm Height Package Minimizing Off-Board Profile Complementary NPN Type BC847BFZ Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Case: X2-DFN0606-3 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu, Solderable per MIL-STD-202, Method 208 e4 Weight: 0.0008 grams (Approximate) C X2-DFN0606-3 B E Top View Bottom View Device Symbol Top View Device Schematic Ordering Information (Note 4) Product BC857BFZ-7B Notes: Marking 3W Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 3W = Product Type Marking Code Top View Bar Denotes Base and Emitter Side BC857BFZ Document number: DS37158 Rev. 2 - 2 1 of 7 www.diodes.com May 2015 © Diodes Incorporated BC857BFZ Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic NEW PRODUCT Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -6.0 V Continuous Collector Current IC -100 mA Peak Pulse Collector Current ICM -200 mA Value Unit Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and Storage and Temperature Range Symbol (Note 5) (Note 6) (Note 5) (Note 6) RJA 270 925 465 135 (Note 7) RJL 135 °C/W TJ, TSTG -55 to +150 °C PD mW °C/W ESD Ratings (Note 8) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol Value Unit JEDEC Class ESD HBM ESD MM 4,000 200 V V 3A B 5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink. 6. Same as Note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper. 7. Thermal resistance from junction to solder-point (on the exposed collector pad). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. BC857BFZ Document number: DS37158 Rev. 2 - 2 2 of 7 www.diodes.com May 2015 © Diodes Incorporated BC857BFZ Thermal Characteristics and Derating Information Max Power Dissipation (W) -IC Collector Current (A) 0.30 VCE(sat) Limited DC 1s 100ms 10m 10ms Single Pulse T amb=25°C 1ms 100µs Minimum Copper 1m 100m 1 10 -VCE Collector-Emitter Voltage (V) 0.20 0.15 0.10 0.05 0.00 0 20 100 120 140 160 100 Maximum Power (W) Minimum Copper D=0.5 250 200 150 80 Single Pulse T amb=25°C T amb=25°C 350 300 60 Derating Curve 500 450 400 40 Temperature (°C) Safe Operating Area Thermal Resistance (°C/W) NEW PRODUCT 100m Minimum Copper 0.25 D=0.2 Single Pulse 100 50 0 100µ D=0.05 D=0.1 1m 10m 100m 1 10 100 1k Minimum Copper 10 1 0.1 100µ Pulse Width (s) Document number: DS37158 Rev. 2 - 2 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance BC857BFZ 1m 3 of 7 www.diodes.com Pulse Power Dissipation May 2015 © Diodes Incorporated BC857BFZ Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS NEW PRODUCT Collector-Base Breakdown Voltage Symbol Min Typical Max Unit Test Condition BVCBO -50 -100 — V IC = -50µA, IB = 0 Collector-Emitter Breakdown Voltage BVCES -50 -90 — V IC = -50µA, IB = 0 Collector-Emitter Breakdown Voltage (Note 9) BVCEO -45 -65 — V IC = -1mA, IB = 0 Collector-Base Breakdown Voltage BVEBO -6.0 -8.5 — V IE = -50µA, IC = 0 ICBO — — -15 nA VCB = -40V ICES — — -15 nA VCE = -40V hFE — 200 340 330 470 — IC = -10µA, VCE = -5.0V IC = -2.0mA, VCE = -5.0V Collector-Emitter Saturation Voltage VCE(sat) — -70 -300 -175 -500 mV IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA Base-Emitter Saturation Voltage VBE(sat) — -760 -885 -1,000 -1,100 mV IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA Base-Emitter Voltage VBE(on) -600 — -670 -715 -780 -850 mV IC = -2.0mA, VCE = -5V IC = -10mA, VCE = -5V Cobo — 2.0 — pF VCB = -10.0V, f = 1.0MHz, IE = 0 fT 100 270 — MHz Collector-Base Cutoff Current Collector-Emitter Cutoff Current ON CHARACTERISTICS (Note 9) DC Current Gain — SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product Note: VCE = -5V, IC = -10mA, f = 100MHz 9. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%. BC857BFZ Document number: DS37158 Rev. 2 - 2 4 of 7 www.diodes.com May 2015 © Diodes Incorporated BC857BFZ Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.) 600 0.18 IB = -2mA TA = 125°C -hFE, DC CURRENT GAIN -IC, COLLECTOR CURRENT (A) VCE = 5V 500 IB = -1.4mA IB = -1.2mA 0.12 IB = -1mA 0.10 IB = -0.8mA IB = -0.6mA 0.08 IB = -0.4mA 0.06 0.04 450 TA = 85°C 400 350 TA = 25°C 300 250 200 TA = -55°C 150 IB = -0.2mA 100 0.02 0 0 50 0 1 2 3 4 5 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage 0 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 5 Typical DC Current Gain vs. Collector Current 1 1 IC/IB = 20 -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) TA = 150°C 0.1 T A = 125°C T A = 85°C T A = 25°C TA = -55°C 0.01 0.1 VCE = -5V 0.8 0.6 TA = -55°C TA = 25°C T A = 150°C 0.4 0.2 0.1 TA = 125°C TA = 85°C 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Base-Emitter Turn-On Voltage vs. Collector Current BC857BFZ Document number: DS37158 Rev. 2 - 2 T A = 125°C TA = 85°C TA = 25°C TA = -55°C 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Collector-Emitter Saturation Voltage vs. Collector Current -VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 1.0 TA = 150°C 0.1 0.01 0.1 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current -VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) NEW PRODUCT IB = -1.6mA 0.14 TA = 150°C 550 IB = -1.8mA 0.16 5 of 7 www.diodes.com 1.2 Gain = 10 1.0 0.8 0.6 TA = -55°C TA = 25°C TA = 150°C TA = 125°C 0.4 T A = 85°C 0.2 0.1 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 9 Typical Base-Emitter Saturation Voltage vs. Collector Current May 2015 © Diodes Incorporated BC857BFZ Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A A1 NEW PRODUCT Seating Plane D D2 e/2 D3 E2 e b(2x) k E X2-DFN0606-3 Dim Min Max Typ A 0.36 0.42 0.39 A1 0 0.05 0.02 b 0.10 0.20 0.15 D 0.57 0.67 0.62 D2 0.155 BSC D3 0.185 BSC E 0.57 0.67 0.62 E2 0.40 0.60 0.50 e 0.35 BSC k 0.16 REF L 0.09 0.21 0.15 L2 0.11 0.31 0.21 All Dimensions in mm L2 L(2x) Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X Dimensions C X X1 X2 Y Y1 Y C Y1 X1 Value (in mm) 0.350 0.280 0.350 0.760 0.200 0.600 X2 BC857BFZ Document number: DS37158 Rev. 2 - 2 6 of 7 www.diodes.com May 2015 © Diodes Incorporated BC857BFZ IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com BC857BFZ Document number: DS37158 Rev. 2 - 2 7 of 7 www.diodes.com May 2015 © Diodes Incorporated