MMBT3904LP 40V NPN SMALL SIGNAL TRANSISTOR IN DFN1006 Features Mechanical Data BVCEO > 40V IC = 200mA High Collector Current PD = 1000mW Power Dissipation 0.60mm2 Package Footprint, 13 times Smaller than SOT23 0.5mm Height Package Minimizing Off-Board Profile Complementary PNP Type MMBT3906LP Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: X1-DFN1006-3 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.0008 grams (Approximate) C X1-DFN1006-3 B B C E E Bottom View Top View Device Schematic Device Symbol Ordering Information (Note 4) Product MMBT3904LP-7 MMBT3904LP-7B Notes: Marking 1N 1N Reel size (inches) 7 7 Tape width (mm) 8mm 8mm Quantity per reel 3,000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information From date code 1527 (YYWW), this changes to: Top View Bar Denotes Base and Emitter Side 1N 1N 1N 1N Top View Dot Denotes Collector Side 1N MMBT3904LP-7 1N 1N 1N 1N MMBT3904LP Document number: DS31835 Rev. 5 - 2 1N = Product Type Marking Code 1N 1N Top View Bar Denotes Base and Emitter Side 1N MMBT3904LP-7B 1 of 7 www.diodes.com May 2015 © Diodes Incorporated MMBT3904LP Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VCBO VCEO VEBO IC ICM Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Value 60 40 6.0 200 200 Unit V V V mA mA Value Unit Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and Storage and Temperature Range Symbol (Note 5) (Note 6) (Note 5) (Note 6) (Note 7) PD RJA 400 1000 310 120 mW C/W RJL 120 °C/W TJ, TSTG -55 to +150 °C ESD Ratings (Note 8) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 4,000 200 Unit V V JEDEC Class 3A B 5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink. 6. Same as Note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper. 7. Thermal resistance from junction to solder-point (on the exposed collector pad). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. MMBT3904LP Document number: DS31835 Rev. 5 - 2 2 of 7 www.diodes.com May 2015 © Diodes Incorporated MMBT3904LP Thermal Characteristics r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * R JA D = Single Pulse RJA = 310°C/W Duty Cycle, D = t1/ t2 0.001 0.000001 0.0001 0.01 1 t1, PULSE DURATION TIME (sec) Fig. 1 Transient Thermal Resistance 100 10,000 P (PK), PEAK TRANSI ENT POI WER (W) 1,000 Single Pulse RJA = 310°C/W 100 RJA(t) = r(t) * RJA TJ - TA = P * RJA(t) 10 1 0.1 1E-06 0.0001 0.01 1 100 10,000 t1, PULSE DURATION TIME (sec) Fig. 2 Single Pulse Maximum Power Dissipation MMBT3904LP Document number: DS31835 Rev. 5 - 2 3 of 7 www.diodes.com May 2015 © Diodes Incorporated MMBT3904LP Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 9) Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 9) Symbol Min Max Unit BVCBO BVCEO BVEBO ICEX IBL 60 40 6.0 50 50 V V V nA nA hFE 40 70 100 60 30 300 Collector-Emitter Saturation Voltage VCE(sat) 0.20 0.30 V Base-Emitter Saturation Voltage VBE(sat) 0.65 0.85 0.95 V Cobo Cibo hie hre hfe hoe 1.0 0.5 100 1.0 4.0 8.5 10 8.0 400 40 pF pF kΩ x 10-4 µS Current Gain-Bandwidth Product fT 300 MHz SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time td tr ts tf 35 35 200 50 ns ns ns ns DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Note: Test Condition IC = 10µA, IE = 0 IC = 1.0mA, IB = 0 IE = 10µA, IC = 0 VCE = 30V, VEB(OFF) = 3.0V VCE = 30V, VEB(OFF) = 3.0V IC = 100µA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 50mA, VCE = 1.0V IC = 100mA, VCE = 1.0V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 20V, IC = 10mA, f = 100MHz VCC = 3.0V, IC = 10mA, VBE(off) = - 0.5V, IB1 = 1.0mA VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. MMBT3904LP Document number: DS31835 Rev. 5 - 2 4 of 7 www.diodes.com May 2015 © Diodes Incorporated MMBT3904LP Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.) 0.14 400 IB = 1.6mA IB = 1.2mA 0.08 IB = 0.8mA IB = 0.6mA 0.06 IB = 0.4mA 0.04 IB = 0.2mA 0.02 hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (A) T A = 150°C IB = 2mA 0.10 0 VCE = 1V 350 0.12 300 TA = 125°C 250 TA = 85°C 200 T A = 25°C 150 100 TA = -55°C 50 0 0 1 2 3 4 5 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical DC Current Gain vs. Collector Current IC/IB = 20 TA = 150°C 0.1 TA = 125°C TA = 85°C TA = 25°C TA = -55°C 0.01 0.1 VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.1 1.0 VCE = 5V 0.9 0.8 TA = 150°C 0.7 0.6 TA = 125°C 0.5 TA = 85°C TA = 25°C 0.4 0.3 T A = -55°C 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Base-Emitter Turn-On Voltage vs. Collector Current MMBT3904LP Document number: DS31835 Rev. 5 - 2 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 1 TA = 150°C TA = 125°C 0.1 TA = 85°C TA = 25°C TA = -55°C 0.01 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Collector-Emitter Saturation Voltage vs. Collector Current VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 1.1 Gain = 10 1.0 0.9 0.8 TA = 150°C 0.7 TA = 125°C 0.6 TA = 85°C 0.5 TA = 25°C T A = -55°C 0.4 0.3 5 of 7 www.diodes.com 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 9 Typical Base-Emitter Saturation Voltage vs. Collector Current May 2015 © Diodes Incorporated MMBT3904LP Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A A1 X1-DFN1006-3 Dim Min Max Typ A 0.47 0.53 0.50 A1 0.00 0.05 0.03 b 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.35 L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 z 0.02 0.08 0.05 All Dimensions in mm Seating Plane D b Pin #1 ID e E b2 z L3 L2 L1 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C Y Dimensions C G1 G2 X X1 Y Y1 Y1 G2 X G1 X1 MMBT3904LP Document number: DS31835 Rev. 5 - 2 6 of 7 www.diodes.com Value (in mm) 0.70 0.30 0.20 0.40 1.10 0.25 0.70 May 2015 © Diodes Incorporated MMBT3904LP IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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