ZXTC6717MC Features Mechanical Data Applications Ordering

A Product Line of
Diodes Incorporated
ZXTC6717MC
COMPLEMENTARY 15V NPN & 12V PNP LOW SATURATION TRANSISTOR
Features
Mechanical Data
NPN Transistor
•
BVCEO > 15V
•
IC = 4.5A Continuous Collector Current
•
Low Saturation Voltage (100mV max @ 1A)
•
RSAT = 45mΩ for a low equivalent On-Resistance
PNP Transistor
•
BVCEO > -12V
•
IC = -4A Continuous Collector Current
•
Low Saturation Voltage (-140mV max @ -1A)
•
RSAT = 60mΩ for a low equivalent On-Resistance
•
hFE characterized up to 12A for high current gain hold up
•
Low profile 0.8mm high package for thin applications
•
RθJA efficient, 40% lower than SOT26
2
•
6mm footprint, 50% smaller than TSOP6 and SOT26
•
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
•
Halogen and Antimony Free. “Green” Device (Note 3)
•
Qualified to AEC-Q101 Standards for High Reliability
•
PPAP capable (Note 4)
•
•
•
•
•
•
•
Case: W-DFN3020-8 Type B
Nominal package height: 0.8mm
Case material: molded plastic. “Green” molding compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - NiPdAu, Solderable per MIL-STD-202,
Method 208 e4
Weight: 0.013 grams (approximate)
Applications
•
•
•
•
•
•
DC – DC Converters
Charging circuits
Power switches
Motor control
LED Backlighting circuits
Portable applications
C1
C2
W-DFN3020-8
Type B
C2
B1
B2
E2
Bottom View
C1
C1
C1
C2
E1
Top View
C2
B2
E1
E2
NPN Transistor
B1
Pin 1
PNP Transistor
Bottom View
Pin-Out
Ordering Information (Note 4 & 5)
Product
ZXTC6717MCTA
ZXTC6717MCQTA
Notes:
Compliance
AEC-Q101
Automotive
Marking
DA1
DA1
Reel size (inches)
7
7
Tape width (mm)
8
8
Quantity per reel
3,000
3,000
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com
Marking Information
DA1
ZXTC6717MC
Document number: DS31926 Rev. 4 - 2
DA1 = Product type Marking Code
Dot denotes Pin 1
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ZXTC6717MC
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Symbol
VCBO
VCEO
VEBO
ICM
(Notes 6 & 9)
(Notes 7 & 9)
Base Current
NPN
40
15
7
15
4.5
5
IC
PNP
-20
-12
-7
-12
-4
-4.45
Unit
V
V
V
A
A
1
IB
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
(Notes 6 & 9)
Power Dissipation
Linear Derating Factor
(Notes 7 & 9)
PD
(Notes 8 & 9)
(Notes 8 & 10)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
Notes:
(Notes 6 & 9)
(Notes 7 & 9)
(Notes 8 & 9)
(Notes 8 & 10)
(Notes 9 & 11)
RθJA
RθJL
TJ, TSTG
NPN
PNP
1.5
12
2.45
19.6
1.13
8
1.7
13.6
83.3
51.0
111
73.5
17.1
-55 to +150
Unit
W
mW/°C
°C/W
°C
6. For a dual device surface mounted on 28mm x 28mm (8cm2) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector pads connected to each half.
7. Same as note (6), except the device is measured at t <5 sec.
8. Same as note (6), except the device is surface mounted on 31mm x 31mm (10cm2) FR4 PCB with high coverage of single sided 1oz copper.
9. For a dual device with one active die.
10. For dual device with 2 active die running at equal power.
11. Thermal resistance from junction to solder-point (on the exposed collector pads).
ZXTC6717MC
Document number: DS31926 Rev. 4 - 2
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ZXTC6717MC
Thermal Characteristics and Derating Information
-IC Collector Current (A)
IC Collector Current (A)
VCE(SAT)
10 Limited
DC
1
1s
100ms
10ms
1ms
0.1
8sqcm 2oz Cu
One active die
Single Pulse, Tamb=25°C
0.01
0.1
100us
1
VCE(SAT)
10
Limited
DC
1
1s
100ms
10ms
0.1
0.01
0.1
10
1ms
100us
8sqcm 2oz Cu
One active die
Single Pulse, Tamb=25°C
1
10
-VCE Collector-Emitter Voltage (V)
VCE Collector-Emitter Voltage (V)
NPN Safe Operating Area
PNP Safe Operating Area
80
60
D=0.5
40
20
Single Pulse
D=0.2
D=0.05
D=0.1
0
100µ
1m
10m 100m
1
10
100
1k
Max Power Dissipation (W)
Thermal Resistance (°C/W)
2.0
8sqcm 2oz Cu
One active die
10sqcm 1oz Cu
Two active die
1.5
8sqcm 2oz Cu
One active die
10sqcm 1oz Cu
One active die
1.0
0.5
0.0
0
Transient Thermal Impedance
75
100
125
150
225
2oz Cu
Two active die
Tamb=25°C
Tj max=150°C
Thermal Resistance (°C/W)
PD Dissipation (W)
2.5
50
Derating Curve
3.5
3.0
25
Temperature (°C)
Pulse Width (s)
Continuous
2.0
2oz Cu
One active die
1.5
1.0
1oz Cu
One active die
0.5
0.0
100m
1
1oz Cu
Two active die
10
100
200
125
100
75
50
2oz Cu
Once active die
2oz Cu
Two active die
25
0
0.1
1
10
100
Board Cu Area (sqcm)
Power Dissipation v Board Area
Document number: DS31926 Rev. 4 - 2
1oz Cu
Two active die
150
Board Cu Area (sqcm)
ZXTC6717MC
1oz Cu
One active die
175
Thermal Resistance v Board Area
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ZXTC6717MC
NPN - Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 12)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Static Forward Current Transfer Ratio (Note 12)
Collector-Emitter Saturation Voltage (Note 12)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICES
hFE
VCE(sat)
Min
40
15
7
-
Typ
70
18
8.2
-
Max
100
100
100
200
300
200
150
415
450
320
240
-
-
80
-
8
70
165
240
mV
200
14
100
200
310
-
-
Unit
V
V
V
nA
nA
nA
-
VBE(on)
VBE(sat)
Cobo
-
0.88
0.94
30
0.96
1.05
40
V
V
pF
Transition Frequency
fT
80
120
-
MHz
Turn-on Time
Turn-off Time
ton
toff
-
120
160
-
ns
ns
Base-Emitter Turn-On Voltage (Note 12)
Base-Emitter Saturation Voltage (Note 12)
Output Capacitance
Notes:
Test Condition
IC = 100µA
IC = 10mA
IE = 100µA
VCB = 30V
VEB = 6V
VCE = 12V
IC = 10mA, VCE = 2V
IC = 200mA, VCE = 2V
IC = 3A, VCE = 2V
IC = 5A, VCE = 2V
IC = 12A, VCE = 2V
IC = 0.1A, IB = 10mA
IC = 1A, IB = 10mA
IC = 3A, IB = 50mA
IC = 4.5A, IB = 50mA
IC = 4.5A, IB = 100mA
IC = 4.5A, VCE = 2V
IC = 4.5A, IB = 50mA
VCB = 10V. f = 1MHz
VCE = 10V, IC = 50mA,
f = 100MHz
VCC = 10V, IC = 1A
IB1 = IB2 = 10mA
12. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
ZXTC6717MC
Document number: DS31926 Rev. 4 - 2
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ZXTC6717MC
NPN – Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
1
0.25
IC/IB=50
Tamb=25°C
0.20
VCE(SAT) (V)
VCE(SAT) (V)
100m
IC/IB=100
10m
IC/IB=50
0.15
100°C
0.10
25°C
-55°C
0.05
IC/IB=10
1m
1m
10m
100m
1
0.00
1m
10
IC Collector Current (A)
10m
100m
1
10
IC Collector Current (A)
VCE(SAT) v IC
VCE(SAT) v IC
630
1.0
450
25°C
0.8
360
0.6
270
-55°C
0.4
180
0.2
0.0
1m
90
10m
100m
1
10
1.0
540
100°C
0
VBE(SAT) (V)
Normalised Gain
1.2
Typical Gain (hFE)
VCE=2V
0.8
-55°C
25°C
0.6
100°C
0.4
1m
10m
100m
1
10
IC Collector Current (A)
IC Collector Current (A)
hFE v IC
1.0
IC/IB=50
VBE(SAT) v IC
VCE=2V
VBE(ON) (V)
0.8
-55°C
0.6
25°C
0.4
0.2
1m
100°C
10m
100m
1
10
IC Collector Current (A)
VBE(ON) v IC
ZXTC6717MC
Document number: DS31926 Rev. 4 - 2
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ZXTC6717MC
PNP - Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 12)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Min
-20
-12
-7
-
Typ
-35
-25
-8.5
-
Max
-100
-100
-100
300
300
180
60
475
450
275
100
-
45
70
-
-
-10
-100
-100
-195
mV
-
-240
-17
-140
-150
-300
-310
VBE(on)
VBE(sat)
Cobo
-
-0.87
-0.97
21
-0.96
-1.07
30
V
V
pF
Transition Frequency
fT
100
110
-
MHz
Turn-on Time
Turn-off Time
ton
toff
-
70
130
-
ns
ns
Static Forward Current Transfer Ratio (Note 12)
Collector-Emitter Saturation Voltage (Note 12)
Base-Emitter Turn-On Voltage (Note 12)
Base-Emitter Saturation Voltage (Note 12)
Output Capacitance
Notes:
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICES
hFE
VCE(sat)
Unit
V
V
V
nA
nA
nA
-
Test Condition
IC = -100µA
IC = -10mA
IE = -100µA
VCB = -16V
VEB = -6V
VCES = -10V
IC = -10mA, VCE = -2V
IC = -100mA, VCE = -2V
IC = -2.5A, VCE = -2V
IC = -8A, VCE = -2V
IC = -10A, VCE = -2V
IC = -0.1A, IB = -10mA
IC = -1A, IB = -10mA
IC = -1.5A, IB = -50mA
IC = -3A, IB = -50mA
IC = -4A, IB = -150mA
IC = -4A, VCE = -2V
IC = -4A, IB = -150mA
VCB = -10V. f = 1MHz
VCE = -10V, IC = -50mA,
f = 100MHz
VCC = -6V, IC = -2A
IB1 = IB2 = -50mA
12. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
ZXTC6717MC
Document number: DS31926 Rev. 4 - 2
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ZXTC6717MC
PNP – Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
0.25
IC/IB=50
Tamb=25°C
0.20
VCE(SAT) (V)
VCE(SAT) (V)
100m
IC/IB=100
10m
IC/IB=50
IC/IB=10
1m
1m
10m
100m
1
25°C
0.10
-55°C
0.05
0.00
1m
10
100°C
0.15
IC Collector Current (A)
10m
450
360
25°C
0.6
270
0.4
180
-55°C
0.2
0.0
1m
90
10m
100m
1
10
0
1.0
VBE(SAT) (V)
540
1.0
0.8
630
Typical Gain (hFE)
Normalised Gain
1.2
VCE=2V
100°C
10
IC/IB=50
0.8
-55°C
25°C
0.6
100°C
0.4
1m
10m
100m
1
10
IC Collector Current (A)
IC Collector Current (A)
hFE v IC
1.0
1
VCE(SAT) v IC
VCE(SAT) v IC
1.4
100m
IC Collector Current (A)
VBE(SAT) v IC
VCE=2V
VBE(ON) (V)
0.8
-55°C
0.6
25°C
0.4
0.2
1m
100°C
10m
100m
1
10
IC Collector Current (A)
VBE(ON) v IC
ZXTC6717MC
Document number: DS31926 Rev. 4 - 2
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ZXTC6717MC
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
W-DFN3020-8
Type B
Dim Min Max Typ
A
0.77 0.83 0.80
A1
0
0.05 0.02
A3
0.15
b
0.25 0.35 0.30
D
2.95 3.075 3.00
D2 0.82 1.02 0.92
D4 1.01 1.21 1.11
e
0.65
E
1.95 2.075 2.00
E2 0.43 0.63 0.53
L
0.25 0.35 0.30
Z
0.375
All Dimensions in mm
A3
A1
D
D4
D4
D2
E
E2
b
Z
e
L
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C
X
Y1
G1
G
Y2
Y
X1
ZXTC6717MC
Document number: DS31926 Rev. 4 - 2
Dimensions
C
G
G1
X
X1
Y
Y1
Y2
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Value (in mm)
0.650
0.285
0.090
0.400
1.120
0.730
0.500
0.365
October 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTC6717MC
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
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ZXTC6717MC
Document number: DS31926 Rev. 4 - 2
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