MMDT3904V Pb Lead-free DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR NEW PRODUCT SPICE MODEL: MMDT3904V Features · · · · Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching A Ultra-Small Surface Mount Package C1 Lead Free By Design/RoHS Compliant (Note 4) B2 E2 SOT-563 B C Mechanical Data · · E1 C2 B1 D Case: SOT-563 G Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 · · Moisture sensitivity: Level 1 per J-STD-020C · · · · · Terminal Connections: See Diagram Dim Min Max Typ A 0.15 0.30 0.25 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D M K Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 G 0.90 1.10 1.00 H 1.50 1.70 1.60 L K 0.56 0.60 0.60 SEE NOTE 1 L 0.10 0.30 0.20 M 0.10 0.18 0.11 H Marking (See Page 2): KAP Ordering Information: See Below Weight: 0.006 grams (approx.) 0.50 C1 B2 E2 E1 B1 C2 All Dimensions in mm Date Code Information: See Page 2 Maximum Ratings @ TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V IC 200 mA Collector Current - Continuous Power Dissipation (Note 2) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Pd 200 mW RqJA 625 °C/W Tj, TSTG -55 to +150 °C Ordering Information (Note 3) Notes: Device Packaging Shipping MMDT3904V-7 SOT-563 3000/Tape & Reel 1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways). 2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 4. No purposefully added lead. DS30449 Rev. 2 - 2 1 of 3 www.diodes.com MMDT3904V ã Diodes Incorporated NEW PRODUCT Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 60 ¾ V Collector-Emitter Breakdown Voltage V(BR)CEO 40 ¾ V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 5.0 ¾ V IE = 10mA, IC = 0 ICEX ¾ 50 nA VCE = 30V, VEB(OFF) = 3.0V IBL ¾ 50 nA VCE = 30V, VEB(OFF) = 3.0V hFE 40 70 100 60 30 ¾ ¾ 300 ¾ ¾ ¾ Collector-Emitter Saturation Voltage VCE(SAT) ¾ 0.20 0.30 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Base-Emitter Saturation Voltage VBE(SAT) 0.65 ¾ 0.85 0.95 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Output Capacitance Cobo ¾ 4.0 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo ¾ 8.0 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.0 10 kW Voltage Feedback Ratio hre 0.5 8.0 x 10-4 Small Signal Current Gain hfe 100 400 ¾ Output Admittance hoe 1.0 40 mS Current Gain-Bandwidth Product fT 300 ¾ MHz VCE = 20V, IC = 10mA, f = 100MHz Noise Figure NF ¾ 5.0 dB VCE = 5.0V, IC = 100mA, RS = 1.0kW, f = 1.0kHz Delay Time td ¾ 35 ns Rise Time tr ¾ 35 ns Storage Time ts ¾ 200 ns Fall Time tf ¾ 50 ns OFF CHARACTERISTICS (Note 5) Collector Cutoff Current Base Cutoff Current IC = 10mA, IE = 0 ON CHARACTERISTICS (Note 5) DC Current Gain IC = 100µA, VCE = IC = 1.0mA, VCE = IC = 10mA, VCE = IC = 50mA, VCE = IC = 100mA, VCE = 1.0V 1.0V 1.0V 1.0V 1.0V SMALL SIGNAL CHARACTERISTICS VCE = 10V, IC = 1.0mA, f = 1.0kHz SWITCHING CHARACTERISTICS Notes: VCC = 3.0V, IC = 10mA, VBE(off) = - 0.5V, IB1 = 1.0mA VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA 5. Short duration test pulse used to minimize self-heating. Marking Information KAP = Product Type Marking Code YM = Date Code Marking Y = Year ex: R = 2004 M = Month ex: 9 = September KAP YM Date Code Key Year 2004 2005 2006 2007 2008 2009 Code R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30449 Rev. 2 - 2 2 of 3 www.diodes.com MMDT3904V 15 CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) Pd, POWER DISSIPATION (mW) f = 1MHz 200 150 100 50 10 5 Cibo Cobo 0 0.1 0 -50 0 50 100 150 1000 10 100 1 VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE hFE, DC CURRENT GAIN 1 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage TA, AMBIENT TEMPERATURE (°C) Fig. 1, Derating Curve - Total TA = 125°C 100 TA = +25°C TA = -25°C 10 IC IB = 10 0.1 VCE = 1.0V 0.01 1 1 0.1 10 100 1000 0.1 1 10 1000 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current 10 IC IB = 10 VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE NEW PRODUCT 250 1 0.1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current DS30449 Rev. 2 - 2 3 of 3 www.diodes.com MMDT3904V