MMDT3904V - Diodes, Inc.

MMDT3904V
Pb
Lead-free
DUAL NPN SMALL SIGNAL SURFACE MOUNT
TRANSISTOR
NEW PRODUCT
SPICE MODEL: MMDT3904V
Features
·
·
·
·
Epitaxial Planar Die Construction
Ideal for Low Power Amplification and Switching
A
Ultra-Small Surface Mount Package
C1
Lead Free By Design/RoHS Compliant (Note 4)
B2
E2
SOT-563
B C
Mechanical Data
·
·
E1
C2
B1
D
Case: SOT-563
G
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
·
·
Moisture sensitivity: Level 1 per J-STD-020C
·
·
·
·
·
Terminal Connections: See Diagram
Dim
Min
Max
Typ
A
0.15
0.30
0.25
B
1.10
1.25
1.20
C
1.55
1.70
1.60
D
M
K
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
G
0.90
1.10
1.00
H
1.50
1.70
1.60
L
K
0.56
0.60
0.60
SEE NOTE 1
L
0.10
0.30
0.20
M
0.10
0.18
0.11
H
Marking (See Page 2): KAP
Ordering Information: See Below
Weight: 0.006 grams (approx.)
0.50
C1
B2
E2
E1
B1
C2
All Dimensions in mm
Date Code Information: See Page 2
Maximum Ratings
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
IC
200
mA
Collector Current - Continuous
Power Dissipation (Note 2)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Pd
200
mW
RqJA
625
°C/W
Tj, TSTG
-55 to +150
°C
Ordering Information (Note 3)
Notes:
Device
Packaging
Shipping
MMDT3904V-7
SOT-563
3000/Tape & Reel
1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
4. No purposefully added lead.
DS30449 Rev. 2 - 2
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MMDT3904V
ã Diodes Incorporated
NEW PRODUCT
Electrical Characteristics
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
60
¾
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
¾
V
IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
5.0
¾
V
IE = 10mA, IC = 0
ICEX
¾
50
nA
VCE = 30V, VEB(OFF) = 3.0V
IBL
¾
50
nA
VCE = 30V, VEB(OFF) = 3.0V
hFE
40
70
100
60
30
¾
¾
300
¾
¾
¾
Collector-Emitter Saturation Voltage
VCE(SAT)
¾
0.20
0.30
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Base-Emitter Saturation Voltage
VBE(SAT)
0.65
¾
0.85
0.95
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Output Capacitance
Cobo
¾
4.0
pF
VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
¾
8.0
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
1.0
10
kW
Voltage Feedback Ratio
hre
0.5
8.0
x 10-4
Small Signal Current Gain
hfe
100
400
¾
Output Admittance
hoe
1.0
40
mS
Current Gain-Bandwidth Product
fT
300
¾
MHz
VCE = 20V, IC = 10mA,
f = 100MHz
Noise Figure
NF
¾
5.0
dB
VCE = 5.0V, IC = 100mA,
RS = 1.0kW, f = 1.0kHz
Delay Time
td
¾
35
ns
Rise Time
tr
¾
35
ns
Storage Time
ts
¾
200
ns
Fall Time
tf
¾
50
ns
OFF CHARACTERISTICS (Note 5)
Collector Cutoff Current
Base Cutoff Current
IC = 10mA, IE = 0
ON CHARACTERISTICS (Note 5)
DC Current Gain
IC = 100µA, VCE =
IC = 1.0mA, VCE =
IC = 10mA, VCE =
IC = 50mA, VCE =
IC = 100mA, VCE =
1.0V
1.0V
1.0V
1.0V
1.0V
SMALL SIGNAL CHARACTERISTICS
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
SWITCHING CHARACTERISTICS
Notes:
VCC = 3.0V, IC = 10mA,
VBE(off) = - 0.5V, IB1 = 1.0mA
VCC = 3.0V, IC = 10mA,
IB1 = IB2 = 1.0mA
5. Short duration test pulse used to minimize self-heating.
Marking Information
KAP = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: R = 2004
M = Month ex: 9 = September
KAP YM
Date Code Key
Year
2004
2005
2006
2007
2008
2009
Code
R
S
T
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
DS30449 Rev. 2 - 2
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MMDT3904V
15
CIBO, INPUT CAPACITANCE (pF)
COBO, OUTPUT CAPACITANCE (pF)
Pd, POWER DISSIPATION (mW)
f = 1MHz
200
150
100
50
10
5
Cibo
Cobo
0
0.1
0
-50
0
50
100
150
1000
10
100
1
VCE(SAT), COLLECTOR-EMITTER (V)
SATURATION VOLTAGE
hFE, DC CURRENT GAIN
1
VCB, COLLECTOR-BASE VOLTAGE (V)
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Derating Curve - Total
TA = 125°C
100
TA = +25°C
TA = -25°C
10
IC
IB = 10
0.1
VCE = 1.0V
0.01
1
1
0.1
10
100
1000
0.1
1
10
1000
100
IC, COLLECTOR CURRENT (mA)
Fig. 4, Typical Collector-Emitter
Saturation Voltage vs. Collector Current
IC, COLLECTOR CURRENT (mA)
Fig. 3, Typical DC Current Gain vs
Collector Current
10
IC
IB = 10
VBE(SAT), BASE-EMITTER (V)
SATURATION VOLTAGE
NEW PRODUCT
250
1
0.1
0.1
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current
DS30449 Rev. 2 - 2
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MMDT3904V