DMMT3906W MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR · · · · · Epitaxial Planar Die Construction Intrinsically Matched PNP Pair (Note 1) Small Surface Mount Package 2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT) 1% Matched Tolerance Available (Note 2) SOT-363 A C2 Mechanical Data · · · · · · · · E2 B2 Case: SOT-363, Molded Plastic Case Material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking (See Below): K4B Weight: 0.015 grams (approx.) Ordering & Date Code Information: See Below Maximum Ratings E1 B C B1 C1 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J ¾ 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 G H K M J D L F a @ TA = 25°C unless otherwise specified Symbol DMMT3906W Unit Collector-Base Voltage Characteristic VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous IC -200 mA Power Dissipation (Note 3) Pd 200 mW RqJA 625 °C/W Tj, TSTG -55 to +150 °C Thermal Resistance, Junction to Ambient (Note 3) Operating and Storage and Temperature Range Ordering Information Notes: 0.25 8° All Dimensions in mm (Note 4) Device Packaging Shipping DMMT3906W-7 SOT-363 3000/Tape & Reel 1. Built with adjacent die from a single wafer. 2. Contact the Diodes, Inc. Sales department. 3. Device mounted on FR5 PCB: 1.0 x 0.75 x 0.62 in.; pad layout as shown on suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM NEW PRODUCT Features K4B K4B = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year 2002 2003 2004 2005 2006 2007 2008 Code N P R S T U V Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30312 Rev. 3 - 2 1 of 3 www.diodes.com DMMT3906W NEW PRODUCT Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -40 ¾ V IC = -10mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -40 ¾ V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ¾ V IE = -10mA, IC = 0 ICEX ¾ -50 nA VCE = -30V, VEB(OFF) = -3.0V IBL ¾ -50 nA VCE = -30V, VEB(OFF) = -3.0V hFE 60 80 100 60 30 ¾ ¾ 300 ¾ ¾ ¾ Collector-Emitter Saturation Voltage (Note 6) VCE(SAT) ¾ -0.25 -0.40 V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA Base-Emitter Saturation Voltage (Note 6) VBE(SAT) -0.65 ¾ -0.85 -0.95 V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA Output Capacitance Cobo ¾ 4.5 pF VCB = -5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo ¾ 10 pF VEB = -0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 2.0 12 kW Voltage Feedback Ratio hre 0.1 10 x 10-4 Small Signal Current Gain hfe 100 400 ¾ Output Admittance hoe 3.0 60 mS Current Gain-Bandwidth Product fT 250 ¾ MHz VCE = -20V, IC = -10mA, f = 100MHz Noise Figure NF ¾ 4.0 dB VCE = -5.0V, IC = -100mA, RS = 1.0kW, f = 1.0kHz Delay Time td ¾ 35 ns Rise Time tr ¾ 35 ns Storage Time ts ¾ 225 ns Fall Time tf ¾ 75 ns OFF CHARACTERISTICS (Note 5) Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 5) DC Current Gain (Note 6) IC = -100µA, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -50mA, VCE = IC = -100mA, VCE = -1.0V -1.0V -1.0V -1.0V -1.0V SMALL SIGNAL CHARACTERISTICS VCE = 10V, IC = 1.0mA, f = 1.0kHz SWITCHING CHARACTERISTICS Notes: VCC = -3.0V, IC = -10mA, VBE(off) = 0.5V, IB1 = -1.0mA VCC = -3.0V, IC = -10mA, IB1 = IB2 = -1.0mA 5. Short duration test pulse used to minimize self-heating effect. 6. The DC current gain, hFE, (matched at IC = -10mA and VCE = -1.0V) Collector-Emitter Saturation Voltage, VCE (sat), and Base-Emitter Saturation Voltage, VBE(sat) are matched with typical matched tolerances of 1% and maximum of 2%. DS30312 Rev. 3 - 2 2 of 3 www.diodes.com DMMT3906W 100 200 CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) PD, POWER DISSIPATION (mW) NEW PRODUCT f = 1MHz 150 100 50 10 Cibo Cobo 1 0.1 0 0 25 50 75 100 125 150 200 175 100 10 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature 10 VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE 1000 hFE, DC CURRENT GAIN 1 TA = 125°C 100 TA = +25°C TA = -25°C 10 IC IB = 10 1 0.1 VCE = 1.0V 0.01 1 1 0.1 10 100 1 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE 1.0 0.9 0.8 0.7 0.6 IC IB = 10 0.5 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current DS30312 Rev. 3 - 2 3 of 3 www.diodes.com DMMT3906W