MMBT4401T NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features · · · Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT4403T) Ultra-Small Surface Mount Package SOT-523 Dim Min Max Typ A A 0.15 0.30 0.22 C B 0.75 0.85 0.80 C 1.45 1.75 1.60 D ¾ ¾ 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 J 0.00 0.10 0.05 B C TOP VIEW Mechanical Data E B G · · · · · · · · Case: SOT-523, Molded Plastic Case material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking (See Page 2): 2X Ordering & Date Code Information: See Page 2 Weight: 0.002 grams (approx.) Maximum Ratings H K N J M L D C K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 a 0° 8° ¾ All Dimensions in mm B E @ TA = 25°C unless otherwise specified Characteristic Symbol MMBT4401T Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Collector Current - Continuous (Note 1) IC 600 mA Power Dissipation (Note 1) Pd 150 mW RqJA 833 °C/W Tj, TSTG -55 to +150 °C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30272 Rev. 2 - 2 1 of 3 MMBT4401T NEW PRODUCT Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 60 ¾ V Collector-Emitter Breakdown Voltage V(BR)CEO 40 ¾ V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ¾ V IE = 100mA, IC = 0 ICEX ¾ 100 nA VCE = 35V, VEB(OFF) = 0.4V IBL ¾ 100 nA VCE = 35V, VEB(OFF) = 0.4V hFE 20 40 80 100 40 ¾ ¾ ¾ 300 ¾ ¾ Collector-Emitter Saturation Voltage VCE(SAT) ¾ 0.40 0.75 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Base- Emitter Saturation Voltage VBE(SAT) 0.75 ¾ 0.95 1.2 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Output Capacitance Ccb ¾ 6.5 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance Ceb ¾ 30 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.0 15 kW Voltage Feedback Ratio hre 0.1 8.0 x 10-4 Small Signal Current Gain hfe 40 500 ¾ Output Admittance hoe 1.0 30 mS fT 250 ¾ MHz Delay Time td ¾ 15 ns Rise Time tr ¾ 20 ns Storage Time ts ¾ 225 ns Fall Time tf ¾ 30 ns OFF CHARACTERISTICS (Note 2) Collector Cutoff Current Base Cutoff Current IC = 100mA, IE = 0 ON CHARACTERISTICS (Note 2) DC Current Gain IC = 100µA, VCE = IC = 1.0mA, VCE = IC = 10mA, VCE = IC = 150mA, VCE = IC = 500mA, VCE = 1.0V 1.0V 1.0V 1.0V 2.0V SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 10V, IC = 20mA, f = 100MHz SWITCHING CHARACTERISTICS VCC = 30V, IC = 150mA, VBE(off) = 2.0V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA Ordering Information (Note 3) Notes: Device Packaging Shipping MMBT4401T-7 SOT-523 3000/Tape & Reel 2. Short duration pulse test used to minimize self-heating effect. 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information 2X = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) 2XYM Date Code Key Year 2002 2003 2004 2005 2006 2007 2008 2009 Code N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30272 Rev. 2 - 2 2 of 3 MMBT4401T 250 30 20 200 Cibo CAPACITANCE (pF) Pd, POWER DISSIPATION (mW) 150 100 50 10 5.0 Cobo 1.0 0 0 100 1.0 0.1 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Power Derating Curve 50 10 REVERSE VOLTS (V) Fig. 2 Capacitances (Typical) 2.0 VCE, COLLECTOR-EMITTER VOLTAGE (V) NEW PRODUCT (see Note 1) 1.8 IC = 30mA IC = 1mA IC = 10mA 1.6 IC = 100mA 1.4 IC = 300mA 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 100 IB, BASE CURRENT (mA) Fig. 3 Typical Collector Saturation Region DS30272 Rev. 2 - 2 3 of 3 MMBT4401T