MMDT2907V ADVANCE INFORMAITON DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · · Epitaxial Planar Die Construction Complementary NPN Type Available (MMDT2222V) Ultra-Small Surface Mount Package Lead Free Plating A C1 · · · · · · · E1 Case: SOT-563, Molded Plastic Case Material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminals: Finish - Matte Tin (Note 2) Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking (See Page 2): KAU Ordering & Date Code Information: See Page 2 Weight: 0.006 grams (approx.) Maximum Ratings E2 KAU YM Mechanical Data · · B2 SOT-563 B C C2 B1 D G Dim Min Max Typ A 0.15 0.30 0.25 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D M K H L SEE NOTE 1 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.56 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm C1 B2 E2 E1 B1 C2 @ TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage Characteristic VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous (Note 3) IC -600 mA Power Dissipation (Note 3) Pd 150 mW RqJA 833 °C/W Tj, TSTG -55 to +150 °C Thermal Resistance, Junction to Ambient (Note 3) Operating and Storage and Temperature Range Notes: 1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways). 2. If lead-bearing terminal plating is required, please contact your Diodes Inc. sales representative for availability and minimum order details. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30521 Rev. 1 - 0 1 of 4 www.diodes.com MMDT2907V ã Diodes Incorporated ADVANCE INFORMATION Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -60 ¾ V IC = -10mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -60 ¾ V IC = -10mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ¾ V IE = -10mA, IC = 0 Collector Cutoff Current ICBO ¾ -10 nA mA VCB = -50V, IE = 0 VCB = -50V, IE = 0, TA = 125°C Collector Cutoff Current ICEX ¾ -50 nA VCE = -30V, VEB(OFF) = -0.5V IBL ¾ -50 nA VCE = -30V, VEB(OFF) = -0.5V hFE 75 100 100 100 50 ¾ ¾ ¾ 300 ¾ ¾ IC = -100µA, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -150mA, VCE = IC = -500mA, VCE = Collector-Emitter Saturation Voltage VCE(SAT) ¾ -0.4 -1.6 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA Base-Emitter Saturation Voltage VBE(SAT) ¾ -1.3 -2.6 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Output Capacitance Cobo ¾ 8.0 pF VCB = -10V, f = 1.0MHz, IE = 0 Input Capacitance Cibo — 30 pF VEB = -2.0V, f = 1.0MHz, IC = 0 fT 200 ¾ MHz Turn-On Time toff ¾ 45 ns Delay Time td ¾ 10 ns Rise Time tr ¾ 40 ns Turn-Off Time toff ¾ 100 ns OFF CHARACTERISTICS (Note 4) Base Cutoff Current ON CHARACTERISTICS (Note 4) DC Current Gain -10V -10V -10V -10V -10V SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product VCE = -20V, IC = -50mA, f = 100MHz SWITCHING CHARACTERISTICS Ordering Information Notes: VCC = -30V, IC = -150mA, IB1 = -15mA (Note 5) Device Packaging Shipping MMDT2907V-7 SOT-563 3000/Tape & Reel 4. Short duration test pulse used to minimize self-heating effect. 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information KAU YM KAU = Product Type Marking Code YM = Date Code Marking Y = Year ex: R = 2004 M = Month ex: 9 = September Date Code Key Year 2004 2005 2006 2007 2008 2009 Code R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30521 Rev. 1 - 0 2 of 4 www.diodes.com MMDT2907V 30 20 200 C, CAPACITANCE (pF) Pd, POWER DISSIPATION (mW) 150 100 50 Cibo 10 5.0 Cobo 0 -50 0 50 100 1.0 -0.1 150 -1.0 -10 -30 REVERSE VOLTS (V) Fig. 2 Typical Capacitance TA, AMBIENT TEMPERATURE (°C) Fig. 1, Derating Curve - Total VCE, COLLECTOR-EMITTER VOLTAGE (V) ADVANCE INFORMATION 250 1.6 1.4 IC = 300mA IC = 10mA IC = 100mA 1.2 IC = 1mA IC = 30mA 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 100 IB, BASE CURRENT (mA) Fig. 3 Typical Collector Saturation Region DS30521 Rev. 1 - 0 3 of 4 www.diodes.com MMDT2907V VCE = 5V 0.5 TA = 150°C 0.4 0.3 hFE, DC CURRENT GAIN (NORMALIZED) VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 1000 IC = 10 IB TA = 150°C TA = 25°C 0.2 0.1 100 TA = 25°C TA = -50°C 10 TA = -50°C 0 1 1 10 1000 100 1 1000 100 10 IC, COLLECTOR CURRENT (mA) Fig. 5, DC Current Gain vs Collector Current IC, COLLECTOR CURRENT (mA) Fig. 4, Collector Emitter Saturation Voltage vs. Collector Current 1.0 1000 VCE = 5V fT, GAIN BANDWIDTH PRODUCT (MHz) VBE(ON), BASE EMITTER VOLTAGE (V) ADVANCE INFORMATION 0.6 0.9 TA = -50°C 0.8 0.7 0.6 TA = 25°C 0.5 0.4 TA = 150°C 0.3 0.2 VCE = 5V 100 10 1 0.1 1 10 100 DS30521 Rev. 1 - 0 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7, Gain Bandwidth Product vs. Collector Current IC, COLLECTOR CURRENT (mA) Fig. 6, Base Emitter Voltage vs. Collector Current 4 of 4 www.diodes.com MMDT2907V