SPICE MODEL: MMDT2907A MMDT2907A DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) C2 E2 • • • • • • • Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking Information: See Page 4 Ordering and Date Code Information: See Page 4 Weight: 0.006 grams (approximate) Maximum Ratings B1 E1 B C Mechanical Data • • SOT-363 A B2 C1 H K M J D C2 B1 F L E1 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J — 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 α 0° 8° All Dimensions in mm E2 B2 C1 @TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage Characteristic VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous (Note 1) IC -600 mA Total Power Dissipation (Note 1) Pd 200 mW RθJA 625 °C/W Tj, TSTG -55 to +150 °C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: 1. 2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. No purposefully added lead. DS30109 Rev. 10 - 2 1 of 4 www.diodes.com MMDT2907A © Diodes Incorporated Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 3) V(BR)CBO -60 ⎯ V IC = -10μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -60 ⎯ V IC = -10mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ⎯ V IE = -10μA, IC = 0 Collector Cutoff Current ICBO ⎯ -10 nA μA VCB = -50V, IE = 0 VCB = -50V, IE = 0, TA = 125°C Collector Cutoff Current ICEX ⎯ -50 nA VCE = -30V, VEB(OFF) = -0.5V IBL ⎯ -50 nA VCE = -30V, VEB(OFF) = -0.5V hFE 75 100 100 100 50 ⎯ ⎯ ⎯ 300 ⎯ ⎯ IC = -100µA, VCE = -10V IC = -1.0mA, VCE = -10V IC = -10mA, VCE = -10V IC = -150mA, VCE = -10V IC = -500mA, VCE = -10V VCE(SAT) ⎯ -0.4 -1.6 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA ⎯ -1.3 -2.6 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Collector-Base Breakdown Voltage Base Cutoff Current B ON CHARACTERISTICS (Note 3) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VBE(SAT) B B B B SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo ⎯ 8.0 pF VCB = -10V, f = 1.0MHz, IE = 0 Input Capacitance Cibo — 30 pF VEB = -2.0V, f = 1.0MHz, IC = 0 fT 200 ⎯ MHz Turn-On Time toff ⎯ 45 ns Delay Time td ⎯ 10 ns Rise Time tr ⎯ 40 ns Turn-Off Time toff ⎯ 100 ns Storage Time ts ⎯ 80 ns Fall Time tf ⎯ 30 ns Current Gain-Bandwidth Product VCE = -20V, IC = -50mA, f = 100MHz SWITCHING CHARACTERISTICS Notes: 3. VCC = -30V, IC = -150mA, IB1 = -15mA VCC = -6.0V, IC = -150mA, IB1 = IB2 = -15mA Short duration pulse test used to minimize self-heating effect. 200 f = 1MHz 150 CAPACITANCE (pF) PD, POWER DISSIPATION (mW) Note 1 100 50 Cibo Cobo 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature (Total Device) DS30109 Rev. 10 - 2 VR, REVERSE VOLTAGE (V) Fig. 2, Typical Capacitance Characteristics 2 of 4 www.diodes.com MMDT2907A © Diodes Incorporated -0.6 -1.4 IC = -300mA IC = -10mA VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) VCE, COLLECTOR-EMITTER VOLTAGE (V) -1.6 IC = -100mA -1.2 IC = -1mA IC = -30mA -1.0 -0.8 -0.6 -0.4 -0.2 0 -0.001 IC = 10 IB -0.5 -0.4 -0.3 TA = 150°C TA = 25°C -0.2 -0.1 TA = -50°C 0 -0.1 -0.01 -1 -10 -100 -1 IB, BASE CURRENT (mA) Fig. 3, Typical Collector Saturation Region -100 -1000 IC, COLLECTOR CURRENT (mA) Fig. 4, Collector Emitter Saturation Voltage vs. Collector Current -1.0 1000 VBE(ON), BASE EMITTER VOLTAGE (V) VCE = -5V TA = 150°C hFE, DC CURRENT GAIN -10 100 TA = 25°C TA = -50°C 10 VCE = -5V -0.9 TA = -50°C -0.8 -0.7 -0.6 TA = 25°C -0.5 -0.4 TA = 150°C -0.3 -0.2 1 -10 -1 -100 -0.1 -1000 -1 -10 -100 IC, COLLECTOR CURRENT (mA) Fig. 6, Base Emitter Voltage vs. Collector Current IC, COLLECTOR CURRENT (mA) Fig. 5, DC Current Gain vs Collector Current fT, GAIN BANDWIDTH PRODUCT (MHz) 1000 VCE = -5V 100 10 1 -1 -10 -100 IC, COLLECTOR CURRENT (mA) Fig. 7, Gain Bandwidth Product vs. Collector Current DS30109 Rev. 10 - 2 3 of 4 www.diodes.com MMDT2907A © Diodes Incorporated Ordering Information Notes: 4. (Note 4) Device Packaging Shipping MMDT2907A-7-F SOT-363 3000/Tape & Reel For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K2F = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Data Code Key Year Code 1998 J Month Code Jan 1 1999 K Feb 2 2000 L 2001 M Mar 3 2002 N Apr 4 2003 P 2004 R May 5 Jun 6 2005 S 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30109 Rev. 10 - 2 4 of 4 www.diodes.com MMDT2907A © Diodes Incorporated