FUJITSU SEMICONDUCTOR DS501-00006-5v1-J DATA SHEET FRAM 4M (256 K×16) MB85R4002A ■ MB85R4002A × 16 MB85R4002A MB85R4002A E2PROM MB85R4002A , CMOS FRAM (Ferroelectric Random Access Memory : , SRAM / , SRAM ■ 262,144 ×16 LB, UB / / 1010 10 ( 55 °C), 55 ( 35 °C) 3.0 V 3.6 V 15 mA( ) 50 μA( ) 40 °C 85 °C TSOP, 48 (FPT-48P-M48) RoHS Copyright 2011-2015 FUJITSU SEMICONDUCTOR LIMITED 2015.5 262,144 ) 1010 , MB85R4002A ■ (TOP VIEW) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 A15 A14 A13 A12 A11 A10 A9 A8 NC DNU WE CE2 VSS UB LB VDD A17 A7 A6 A5 A4 A3 A2 A1 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 NC VSS I/O16 I/O8 I/O15 I/O7 I/O14 I/O6 I/O13 I/O5 VDD I/O12 I/O4 I/O11 I/O3 I/O10 I/O2 I/O9 I/O1 OE VSS CE1 A0 (FPT-48P-M48) ■ 1 29 2 8, 17 25, 48 A0 45 I/O1 36, 38 A17 I/O16 26 CE1 1 12 CE2 2 11 WE 28 OE 14, 15 LB, UB 16, 37 VDD 13, 27, 46 VSS 9, 47 NC 10 DNU 2 3 , , VDD VSS DS501-00006-5v1-J MB85R4002A ■ A0 FRAM 262,144×16 A17 WE OE LB UB I/O9㨪I/O16 I/O16 CE2 CE1 I/O1㨪I/O8 I/O9 I/O8 intWE intOE I/O1 DS501-00006-5v1-J 3 MB85R4002A ■ CE1 CE2 WE OE LB UB H × × × × × × L × × × × × × H H × × × × × × H H L L L H H L L L L H H L L L L H H L L L L H H L L L L H H L L L L H H L H H L ( L SRAM, H H H ) H L L H : “H” L 1 OE ( WE L L SRAM, 2 L H H H H ) , L“L” , דH”, “L”, I/O1 I/O8 I/O9 Hi-Z I/O16 Hi-Z (ISB) Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z (IDD) Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z , Hi-Z , 1 2 4 OE WE SRAM SRAM , OE , WE DS501-00006-5v1-J MB85R4002A ■ , VSS VDD 0.5 VIN 0.5 VDD 0.5 ( 4.0) V VOUT 0.5 VDD 0.5 ( 4.0) V TA 40 85 °C TSTG 55 125 °C 3.6 V V 4.0 (0 V) ( , , ) , , ■ VDD 1 TA 2 1 2 , VSS 3.0 3.3 40 ⎯ °C 85 (0 V) , , , , , , , DS501-00006-5v1-J 5 MB85R4002A ■ 1. ( *1 *2 *3 VDD ⎯ ⎯ 10 μA 0V VDD, VIH or OE VIH ⎯ ⎯ 10 μA ⎯ 15 20 mA ⎯ 50 150 μA VDD 0.5 ( 4.0) V |ILI| VIN |ILO| VOUT CE1 IDD CE1 0.2 V, CE2 Iout 0 mA ISB 0V CE1 VDD CE2 0.2 V VDD 0.2 V, 0.2 V OE VDD 0.2 V, WE VDD 0.2 V LB VDD 0.2 V, UB VDD 0.2 V “H” VIH VDD 3.0 V 3.6 V VDD × 0.8 ⎯ “L” VIL VDD 3.0 V 3.6 V ⎯ “H” VOH IOH 0.5 VDD × 0.8 “L” VOL IOL ⎯ 1 2 3 6 DNU IDD 1.0 mA 2.0 mA , Address, Data In H VDD ) 1 0.2 V L 0.2 V 1I CMOS out V ⎯ 0.6 ⎯ ⎯ 0.4 V V , DS501-00006-5v1-J MB85R4002A 2. 3.0 V 3.6 V 40 °C 0.3 V 5 ns 5 ns 2.0 V / 0.8 V 2.0 V / 0.8 V 50 pF 85 °C 2.7 V (1) tRC 150 ⎯ ns CE1 tCA1 120 ⎯ ns CE2 tCA2 120 ⎯ ns OE tRP 120 ⎯ ns LB, UB tBP 120 ⎯ ns tPC 20 ⎯ ns tAS 0 ⎯ ns tAH 50 ⎯ ns OE tES 0 ⎯ ns LB, UB tBS 5 ⎯ ns tOH 0 ⎯ ns tLZ 30 ⎯ ns CE1 tCE1 ⎯ 120 ns CE2 tCE2 ⎯ 120 ns OE tOE ⎯ 120 ns tOHZ ⎯ 20 ns (2) tWC 150 ⎯ ns CE1 tCA1 120 ⎯ ns CE2 tCA2 120 ⎯ ns LB, UB tBP 120 ⎯ ns tPC 20 ⎯ ns tAS 0 ⎯ ns tAH 50 ⎯ ns tBS 5 ⎯ ns tWP 120 ⎯ ns tDS 0 ⎯ ns tDH 50 ⎯ ns tWS 0 ⎯ ns LB, UB DS501-00006-5v1-J 7 MB85R4002A 3. CIN COUT DNU 8 CDNU VDD VIN VOUT 0 V, f 1 MHz, TA 25 °C ⎯ ⎯ 10 pF ⎯ ⎯ 10 pF ⎯ ⎯ 10 pF DS501-00006-5v1-J MB85R4002A ■ 1. (CE 1 ) tRC tCA1 tPC CE1 CE2 tBS tBP LB, UB tAS A0 ~ A17 tAH Valid H or L tES tRP OE tCE1 tOH tLZ I/O1 ~ I/O16 tOHZ Hi-Z Valid Invalid Invalid :H or L 2. (CE2 ) CE1 tRC tPC tCA2 CE2 tBS tBP LB, UB tAS A0 ~ A17 tAH Valid H or L tES tRP OE tCE2 tOH tLZ I/O1 ~ I/O16 tOHZ Hi-Z Valid Invalid Invalid :H or L DS501-00006-5v1-J 9 MB85R4002A 3. (OE ) CE1 CE2 tBS tBP LB, UB tAS A0 ~ A17 tAH Valid H or L tRC tPC tRP OE tOE tOHZ tOH tLZ I/O1 ~ I/O16 Hi-Z Valid Invalid Invalid :H or L 4. (CE 1 ) tWC tCA1 tPC CE1 CE2 tBS tBP LB, UB tAS A0 ~ A17 tAH Valid H or L tWS tWP WE tDS tDH Hi-Z Valid Data In H or L :H or L 10 DS501-00006-5v1-J MB85R4002A 5. (CE2 ) CE1 tWC tPC tCA2 CE2 tBS tBP LB, UB tAS A0 ~ A17 tAH Valid H or L tWS tWP WE tDH tDS Hi-Z Valid Data In H or L :H or L 6. ) (WE CE1 CE2 tBS tBP LB, UB tAS A0 ~ A17 tAH Valid H or L tWC tWP tPC WE tDS tDH Hi-Z Data In Valid H or L :H or L DS501-00006-5v1-J 11 MB85R4002A ■ tPD tR tPU VDD VDD CE2 CE2 3.0 V 3.0 V VIH (Min) VIH (Min) 1.0 V 1.0 V VIL (Max) VIL (Max) CE2 0.2 V 0V 0V CE1 > VDD × 0.8* CE1 > VDD × 0.8* CE1 : Don't Care CE1 CE OFF ON 1 (Max) CE1 VDD 0.5 V CE1 CE1 tPD 85 ⎯ ⎯ ns tPU 85 ⎯ ⎯ ns tR 0.05 ⎯ 200 ms , , , IC CE2 L , , CE1, CE2 ■ FRAM *1 / 1010 ⎯ 10 ⎯ T A 55 °C 55 ⎯ T A 35 °C *2 1 2 FRAM , / TA 85 °C / , , ■ 12 DS501-00006-5v1-J MB85R4002A ■ ESD DUT ESD HBM( JESD22-A114 2000 V 2000 V ) ESD MM( JESD22-A115 200 V 200 V ) ESD CDM( JESD22-C101 ) ( ⎯ ) ( ⎯ MB85R4002ANC-GE1 JESD78 ) ⎯ JESD78 ( Proprietary method ) (C-V Proprietary method ) ( 300 mA 300 mA ⎯ ) A VDD IIN ) VIN IIN - VSS , IIN ±300 mA , I/O DS501-00006-5v1-J VDD ( ) V VIN ( + DUT 300 mA ( ) , IIN 300 mA , 13 MB85R4002A (C-V ) A 1 2 VDD SW DUT + V VIN - ( ) SW 2 1 ,5 1 2 C 200pF VDD ( ) VSS , ,5 , ■ JEDEC , Moisture Sensitivity Level 3 (IPC / JEDEC J-STD-020D) ■ , REACH 14 , EU RoHS RoHS DS501-00006-5v1-J MB85R4002A ■ TSOP, 48 (FPT-48P-M48) MB85R4002ANC-GE1 ⎯* , DS501-00006-5v1-J 15 MB85R4002A ■ ࡊࠬ࠴࠶ࠢTSOP, 48 ࡇࡦ ࠼ࡇ࠶࠴ 0.50 mm ࡄ࠶ࠤࠫ ࡄ࠶ࠤࠫ㐳ߐ 12.00 mm 12.40 mm ࠼ᒻ⁁ ࠟ࡞࠙ࠖࡦࠣ ኽᱛᣇᴺ ࡊࠬ࠴࠶ࠢࡕ࡞࠼ ขઃߌ㜞ߐ 1.20 mm Max. ⾰㊂ 0.36 g (FPT-48P-M48) ᵈ 1㧕# ශኸᴺߩࠫࡦᱷࠅߪ +0.15㧔.006㧕Max ᵈ 2㧕* ශኸᴺߪࠫࡦᱷࠅࠍ߹ߕޕ ᵈ 3㧕┵ሶ߅ࠃ߮┵ሶෘߐߪࡔ࠶ࠠෘࠍޕ ᵈ 4㧕┵ሶߪ࠲ࠗࡃಾᢿᱷࠅࠍ߹ߕޕ ࡊࠬ࠴࠶ࠢTSOP, 48 ࡇࡦ 㧔FPT-48P-M48㧕 0.10±0.05 (.004±.002) (STAND OFF) 1 48 0.50(.020) INDEX #12.00±0.10 (.472±.004) +0.05 0.22 –0.04 (.009 +.002 –.002 ) 24 0.10(.004) M 25 1.13±0.07 (.044±.003) (MOUNTING HEIGHT) Details of A part 14.00±0.20(.551±.008) *12.40±0.10(.488±.004) 0.25(.010) +0.05 –0.03 +.002 –.001 0.145 (.006 C 16 ) 0.08(.003) 2010 FUJITSU SEMICONDUCTOR LIMITED F48048Sc-1-1 A 0.60±0.15 (.024±.006) 0~8 න㧦mm 㧔inches㧕 ᵈᗧ㧦ᒐౝߩ୯ߪෳ⠨୯ߢߔޕ DS501-00006-5v1-J MB85R4002A ■ [MB85R4002ANC-GE1] JAPAN MB85R4002A 1150 E00 E1 [FPT-48P-M48] DS501-00006-5v1-J 17 MB85R4002A ■ 1. 1.1 TSOP48, 56 (I) / 128 / / 1280 5120 322.6 315 15 × 19.0 = 285 15 15 8-NO HOLES 7.62 1.27 7 × 14.9 = 104.3 135.9 15.8 FPT-48P-M48 34.3 25.4 1 13.564 12.2 10 8 1.27 1 1 1 1 10 19 15.8 SEC.A-A 1 1 8 0.9 1.27 1 0.9 1.27 1.27 7.62 7.62 2 1.27 15.564 14.2 11.8 10 15 C 25.4 255.3 2 R4.7 5 B A 0.76 C3 2.54 A 15.8 B 14.9 SEC.B-B 2002-2010 FUJITSU SEMICONDUCTOR LIMITED TSOP (1) 12 × 14 : JHB-TS1-1214-1-D-3 mm 1 18 125 °C MAX 33 g DS501-00006-5v1-J MB85R4002A 1.2 IEC (JEDEC) (IC) Index mark IC *5 *5 *1*4*5 *5 *5 , 1 *5 *5 *5 *1*4*5 *5 ) *2*3*5 ( *5 -A*4*5 -B*4*5 E1 1: 2: 3: 4: 5: , G Pb , , , , , , , , , DS501-00006-5v1-J 19 MB85R4002A 1.3 [C-3 , (20mm×100mm)] (50mm×100mm) 㘈ቴຠဳᩰޓߪޔን჻ㅢຠဳᩰ :::::::::::::: C-3 ㋦㩖㩢㨺㩙㨺㩂 ::: ⸥ຠဳᩰຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨 㧽㧯ޓ㧼㧭㧿㧿 0:::::::::::::: 0:::::::::: :::::: ᬌᩏޓᷣ ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨 ຠᢙ㊂ :::REU :::::::::::::: 㘈ቴຠဳᩰޓߪޔን჻ㅢຠဳᩰ ⸥ຠဳᩰߩ㩔㩨㨺㩄㨺㩎㩨 :::::::: ൮ⵝᐕᣣ #55'/$.'&+0ZZZZZ ::::::::::::::: 㘈ቴຠဳᩰޓߪޔን჻ㅢຠဳᩰ ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨 :::: :::::::::: ൮ⵝㅊ⇟ :::::::::: :::::::::: ን჻ㅢ▤ℂ⇟ภ ຠ㩥㨹㩎ᖱႎ㧗ຠᢙ㊂ :::::::::::::: ․⸥㗄 -A [D ] (100mm×100mm) ⊒ᵈ⠪ޓޓ::::::::::::: ㅍઃవฬ %756 ን჻ㅢ ࡒࠦࡦ࠳ࠢ࠲ᩣᑼળ␠ ฃᷰ႐ᚲฬޓޓ::::::::: ㅍઃవᚲ &'.+8'4;21+06㧕 ⚊ຠࠠ⇟ภޓ:::::::::::::: 64#0501 ຠฬ㩄㨺㩎㩨ޓޓޓ:::::::::::::: 2#4601 ޓޓޓຠဳᩰ ຠฬ 2#460#/':::::::::::::: ຠဳᩰ :::㧛::: ᢙ㧛⚊ᢙ㊂ 36;616#.36; %7561/'454'/#4-5 ⊒ᵈ⠪↪⠨ :::::::::::::::::::: D ฃᵈ⠪ 8'0&14 ::::::: ን჻ㅢ▤ℂ⇟ภ ::::::: ን჻ㅢ▤ℂ⇟ภ ::::::: ን჻ㅢ▤ℂ⇟ภ ::::::::::::::: ޓຠဳᩰ න 70+6 :: 2#%-#)'%1706 ᪿ൮ᢙ :::㧛::: 0::::::::::::::::: ን჻ㅢ▤ℂ⇟ภຠᢙ㊂ 0::::::::::::::::: ຠဳᩰຠᢙ㊂ ን჻ㅢ▤ℂ⇟ภຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨 ຠဳᩰຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨 ን჻ㅢ▤ℂ⇟ภ 0:::::::::: ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨 -B ::::::::::::::㧔ຠဳᩰ㧕 㧔▫ᢙ㧕ޓޓޓ㧔ᢙ㊂㧕 ޓ:▫ޓޓޓޓޓ::: ޓ:▫ޓޓޓޓޓ::: ޓޓޓޓޓ⸘ޓޓ::: 㧔ຠ㩥㨹㩎ᖱႎ㧕 ޓޓޓ::::::: ޓޓޓ::::::: , 20 -A, B DS501-00006-5v1-J MB85R4002A 1.4 (1) H W L L W H 165 360 75 ( mm) (2) H W L L W H 355 385 195 ( DS501-00006-5v1-J mm) 21 MB85R4002A ■ , 1 SRAM 5 6 1. “H” “L” “H” “L” 14 22 DS501-00006-5v1-J MB85R4002A MEMO DS501-00006-5v1-J 23 MB85R4002A 富士通セミコンダクター株式会社 0120-198-610 222-0033 2-100-45 : 9 17 ( , ) PHS http://jp.fujitsu.com/fsl/ , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , ,