FUJITSU SEMICONDUCTOR DS501-00010-8v0-J DATA SHEET FRAM I2C 16 K (2 K×8) MB85RC16V ■ MB85RC16V ×8 MB85RC16V MB85RC16V MB85RC16V , CMOS FRAM (Ferroelectric Random Access Memory: , SRAM / 1012 E2PROM , , ,1 , ■ 2,048 2 ×8 (SCL) / 1 MHz (Max) / 1012 10 ( 85 °C), 95 ( 55 °C), 200 3.0 V 5.5 V 90 μA (Typ @1 MHz) 5 μA (Typ) 40 °C 85 °C SOP, 8 (FPT-8P-M02) RoHS Copyright 2011-2015 FUJITSU SEMICONDUCTOR LIMITED 2015.5 2,048 ) (SDA) ( 2 35 °C) MB85RC16V ■ (TOP VIEW) NC 1 8 VDD NC 2 7 WP NC 3 6 SCL VSS 4 5 SDA (FPT-8P-M02) ■ 1 3 NC 4 VSS 5 SDA 6 SCL , , VDD VSS , , “H” 7 2 “L” , , “L” 8 , WP ( VSS ) , VDD DS501-00010-8v0-J MB85RC16V ■ - SDA FRAM 2,048×8 SCL WP / / ■ I2C (Inter-Integrated Circuit) MB85RC16V , , I2C , I2C ,2 , I2C , ,1 VDD SCL SDA I2C DS501-00010-8v0-J I2C MB85RC16V I2C 3 MB85RC16V ■ I2C I2C ,2 , SDA , SCL “H” SCL “L” SDA (Start) I2C , “L” , SCL (Stop) , SCL I2C “H” “H” , SDA , SDA “H” “L” “H” , , , , , SCL SDA “H” or “L” Start Stop FRAM ■ (tWC) , (ACK) 2 IC , , 8 8 , , “L” , , Slave 9 ACK 9 , SDA , , NACK “H” Master 1 SCL , SCL , ACK “L” , Slave 2 3 8 SDA , , 9 ACK 9 Start 4 ACK 8 , , 8 (ACK SDA ) DS501-00010-8v0-J MB85RC16V ■ MB85RC16V , 11 Byte Write, Page Write, Random Read 11 Current Address Read , , (3 , (3 (8 ) ) ) (8 ) , 11 , ■ ,8 , , , (8 Write (1 ) ) , (4 ), (3 3 (4 ) 4 , (3 (1 , , 3 ) 8 , R/W (Read/Write) “1010” , , Start “1010” ) 3 Read/Write ), Read/ 1 2 3 4 5 6 7 “0” , “1” / 8 9 1 2 .. SCL SDA ACK S 1 0 1 0 A2 A1 A0 R/W .. A Read/Write S A ACK (SDA DS501-00010-8v0-J “L” ) 5 MB85RC16V ■ , ACK“L” 8 , (8 ) , , Byte Write, Page Write, Random Read Current Address Read , ACK , 9 8 , ACK“L” ACK“L” 8 ■ FRAM (Acknowledge Polling) , ACK , * , , (8 ■ ) ,9 (WP) “H” “L” , 8 , FRAM E2PROM ,9 , , , VSS “H” , WP , , “L” “L” ( ) 6 DS501-00010-8v0-J MB85RC16V ■ Byte Write (R/W “0” ACK S , ) , 1 0 1 0 A2 A1 A0 0 A XXX , ACK , Address Low 8bits A Write Data 8bits A P X X X X X X XX MSB LSB S P A ACK (SDA Page Write Byte Write ( ) “L” ) , , (000H) ,2K , S 1 0 1 0 A2 A1 A0 0 A Address Low 8bits A Write Data 8bits A Write Data ... A P S P A DS501-00010-8v0-J ACK (SDA “L” ) 7 MB85RC16V Current Address Read Stop ( , 11 ) OFF 3 , , n , 8 1 11 n Current Address ( n 1 (000H) , ) n+1 S 1 0 1 0 A2 A1 A0 1 A Read Data 8bits S N P P A ACK (SDA “L” N NACK (SDA Random Read Write (R/W “1” ) , SCL 1 2 NACK (SDA S ( 16FH , : “H” ) , , 1 ( “H” ) 001B ) , 1 0 1 0 A2 A1 A0 0 A ) ) Address Low 8bits 01101111B A S 1 0 1 0 A2 A1 A0 1 A Read Data 8bits N P 001B S P A ACK (SDA N NACK (SDA 8 “L” “H” ) ) DS501-00010-8v0-J MB85RC16V Sequential Read Random Read , (R/W “1” , ... A ) , (000H) Read Data 8bits A ... Read Data A Read Data 8bits , N P P A ACK (SDA N NACK (SDA “L” ) “H” ) ■ , I 2C , (1) , , (2) , , , , (1) SDA “L” , SDA , “H” , 9 “ 1 “1”” SCL SDA Hi-Z 1 Read Write (2) I2C DS501-00010-8v0-J “1” , 9 , 9 MB85RC16V ■ VSS * VDD 0.5 V * VIN 0.5 VDD 0.5 ( 6.0) V * VOUT 0.5 VDD 0.5 ( 6.0) V TA 40 85 °C TSTG 55 125 °C 6.0 0V ( , , ) , , ■ VDD *1 TA *2 1 2 VSS 3.0 40 ⎯ 5.5 ⎯ V °C 85 0V , , , , , , , 10 DS501-00010-8v0-J MB85RC16V ■ 1. ( *1 |ILI| 2 |ILO| * IDD VIN 0V VDD ) ⎯ ⎯ 1 μA ⎯ ⎯ 1 μA VOUT 0V SCL 400 kHz ⎯ 40 80 μA SCL 1000 kHz ⎯ 90 130 μA ⎯ 5 10 μA SCL, SDA WP 0V VDD VDD VDD ISB TA 25 °C “H” VIH VDD 3.0 V 5.5 V VDD×0.8 ⎯ 5.5 V “L” VIL VDD 3.0 V 5.5 V VSS ⎯ VDD×0.2 V “L” VOL IOL 3 mA ⎯ ⎯ 0.4 V WP RIN VIN VIL ( 1: 2: VIN VIH ( ) 50 ⎯ ⎯ kΩ ) 1 ⎯ ⎯ MΩ : SCL, SDA : SDA DS501-00010-8v0-J 11 MB85RC16V 2. FSCL 0 100 0 400 0 1000 kHz THIGH 4000 ⎯ 600 ⎯ 400 ⎯ ns TLOW 4700 ⎯ 1300 ⎯ 600 ⎯ ns SCL/SDA Tr ⎯ 1000 ⎯ 300 ⎯ 300 ns SCL/SDA Tf ⎯ 300 ⎯ 300 ⎯ 100 ns Start THD:STA 4000 ⎯ 600 ⎯ 250 ⎯ ns Start TSU:STA 4700 ⎯ 600 ⎯ 250 ⎯ ns SDA THD:DAT 20 ⎯ 20 ⎯ 20 ⎯ ns SDA TSU:DAT 250 ⎯ 100 ⎯ 100 ⎯ ns SDA TDH:DAT 0 ⎯ 0 ⎯ 0 ⎯ ns Stop TSU:STO 4000 ⎯ 600 ⎯ 250 ⎯ ns SCL SCL (SCL SDA , SDA ) TAA ⎯ 3000 ⎯ 900 ⎯ 550 ns TBUF 4700 ⎯ 1300 ⎯ 500 ⎯ ns TSP ⎯ 50 ⎯ 50 ⎯ 50 ns , 3.0 V 4.5 V 40 °C VDD×0.2 5 ns 5 ns VDD/2 VDD/2 12 5.5 V 5.5 V 85 °C VDD×0.8 DS501-00010-8v0-J MB85RC16V 3. TSU:DAT SCL VIH VIL SDA Start THD:DAT VIH VIH VIH VIH VIL VIL VIL VIL VIH VIH VIH VIH VIL VIL VIL VIL TSU:STO TSU:STA THD:STA Tr THIGH SCL Stop VIH TLOW VIH VIL Tf VIL VIH VIH VIL VIL VIH SDA Stop VIH VIL Start VIH VIL VIH VIL VIL TBUF Tr T TDH:DAT f TAA Tsp VIH SCL VIL VIL VIH SDA Valid VIL VIH VIL VIL 1/FSCL 4. CI/O CIN VDD = VIN = VOUT = 0 V, f 1 MHz, TA 25 °C ⎯ ⎯ 15 pF ⎯ ⎯ 15 pF 5. AC 5.5 V 1.8 kΩ Output 100 pF DS501-00010-8v0-J 13 MB85RC16V ■ tf tpd tOFF tr tpu VDD VDD 2.7 V 2.7 V VIH (Min) VIH (Min) 1.0 V 1.0 V VIL (Max) VIL (Max) 0V 0V SDA, SCL > VDD × 0.8 ∗ SDA, SCL SDA, SCL (Max) OFF ON VDD SDA, SCL : Don't care SDA, SCL > VDD × 0.8 ∗ SDA, SCL 0.5 V 85 ⎯ ns 85 ⎯ ns VDD=5.0 V±0.5 V 0.5 ⎯ ms VDD=3.3 V±0.3 V 0.5 50 ms VDD=5.0 V±0.5 V 0.005 50 ms VDD=3.3 V±0.3 V tf 0.01 50 ms ⎯ tOFF 50 ⎯ ms ⎯ tpd SDA, SCL tpu SDA, SCL tr ⎯ , , ■ FRAM *1 / * 1012 ⎯ 10 95 2 200 1 2 FRAM , TA 85 °C ⎯ TA 85 °C ⎯ TA 55 °C ⎯ TA 35 °C / / , , ■ 14 DS501-00010-8v0-J MB85RC16V ■ ESD DUT ESD HBM( JESD22-A114 2000 V 2000 V ) ESD MM( JESD22-A115 200 V 200 V ) ESD CDM( JESD22-C101 1000 V 1000 V ) ( MB85RC16VPNF-G-JNE1 MB85RC16VPNF-G-JNN1E1 ) JESD78 ( ⎯ ) ⎯ JESD78 ( Proprietary method ) (C-V Proprietary method ) ( 300mA 300mA ⎯ ) A VDD IIN ) VIN IIN - VSS , IIN ±300 mA , I/O DS501-00010-8v0-J VDD ( ) V VIN ( + DUT 300 mA ( ) , IIN 300 mA , 15 MB85RC16V (C-V ) A 1 2 VDD SW DUT + V VIN - ( ) SW 2 1 ,5 1 2 C 200pF VDD ( ) VSS , ,5 , ■ JEDEC , Moisture Sensitivity Level 3 (IPC / JEDEC J-STD-020D) ■ , REACH 16 , EU RoHS RoHS DS501-00010-8v0-J MB85RC16V ■ MB85RC16VPNF-G-JNE1*1 SOP, 8 (FPT-8P-M02) ⎯*2 MB85RC16VPNF-G-JNERE1*1 SOP, 8 (FPT-8P-M02) 1500 MB85RC16VPNF-G-JNN1E1 SOP, 8 (FPT-8P-M02) ⎯*2 MB85RC16VPNF-G-JNN1ERE1 SOP, 8 (FPT-8P-M02) 1500 1 2 DS501-00010-8v0-J 17 MB85RC16V ■ ࡊࠬ࠴࠶ࠢSOP, 8 ࡇࡦ ࠼ࡇ࠶࠴ 1.27mm ࡄ࠶ࠤࠫ ࡄ࠶ࠤࠫ㐳ߐ 3.9mm 5.05mm ࠼ᒻ⁁ ࠟ࡞࠙ࠖࡦࠣ ኽᱛᣇᴺ ࡊࠬ࠴࠶ࠢࡕ࡞࠼ ขઃߌ㜞ߐ 1.75mm MAX ⾰㊂ 0.06g (FPT-8P-M02) ࡇࡦ ࡊࠬ࠴࠶ࠢ 㧔FPT-8P-M02㧕 +0.25 ᵈ 1㧕* ශኸᴺߪࠫࡦᱷࠅࠍޕ ᵈ 2㧕* ශኸᴺߪࠫࡦᱷࠅࠍ߹ߕޕ ᵈ 3㧕┵ሶ߅ࠃ߮┵ሶෘߐߪࡔ࠶ࠠෘࠍޕ ᵈ 4㧕┵ሶߪ࠲ࠗࡃಾᢿᱷࠅࠍ߹ߕޕ +.010 +0.03 *1 5.05 –0.20 .199 –.008 0.22 –0.07 +.001 .009 –.003 8 5 *2 3.90±0.30 6.00±0.20 (.154±.012) (.236±.008) Details of "A" part 45° 1.55±0.20 (Mounting height) (.061±.008) 0.25(.010) 0.40(.016) 1 "A" 4 1.27(.050) 0.44±0.08 (.017±.003) 0.13(.005) 0~8° M 0.50±0.20 (.020±.008) 0.60±0.15 (.024±.006) 0.15±0.10 (.006±.004) (Stand off) 0.10(.004) C 18 2002-2012 FUJITSU SEMICONDUCTOR LIMITED F08004S-c-5-10 න㧦mm 㧔inches㧕 ᵈᗧ㧦ᒐౝߩ୯ߪෳ⠨୯ߢߔޕ DS501-00010-8v0-J MB85RC16V ■ [MB85RC16VPNF-G-JNE1] [MB85RC16VPNF-G-JNN1E1] [MB85RC16VPNF-G-JNERE1] [MB85RC16VPNF-G-JNN1ERE1] RC16V E11150 300 [FPT-8P-M02] DS501-00010-8v0-J 19 MB85RC16V ■ 1. 1.1 ( ( ) ) 520 mm , / SOP, 8 (2) FPT-8P-M02 / 95 7600 / 30400 1.8 2.6 7.4 6.4 4.4 C ©2006-2010 FUJITSU SEMICONDUCTOR LIMITED 2006 FUJITSU LIMITED F08008-SET1-PET:FJ99L-0022-E0008-1-K-1 F08008-SET1-PET:FJ99L-0022-E0008-1-K-3 t 0.5 ( 20 mm) DS501-00010-8v0-J MB85RC16V 1.2 IC SOP Index mark 1 ( ( 1 2 3 ( 3 -B 3 E1 , ) 2 , , ) ) 3 1 -A *3 , G Pb , , , DS501-00010-8v0-J 21 MB85RC16V 1.3 ( (50mm×100mm) [C-3 , (20mm×100mm)] ) 㘈ቴຠဳᩰޓߪޔን჻ㅢຠဳᩰ :::::::::::::: C-3 ㋦㩖㩢㨺㩙㨺㩂 ::: ⸥ຠဳᩰຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨 㧽㧯ޓ㧼㧭㧿㧿 0:::::::::::::: 0:::::::::: :::::: ᬌᩏޓᷣ ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨 ຠᢙ㊂ :::REU :::::::::::::: 㘈ቴຠဳᩰޓߪޔን჻ㅢຠဳᩰ ⸥ຠဳᩰߩ㩔㩨㨺㩄㨺㩎㩨 :::::::: ൮ⵝᐕᣣ #55'/$.'&+0ZZZZZ ::::::::::::::: 㘈ቴຠဳᩰޓߪޔን჻ㅢຠဳᩰ ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨 :::: :::::::::: ൮ⵝㅊ⇟ :::::::::: :::::::::: ን჻ㅢ▤ℂ⇟ภ ຠ㩥㨹㩎ᖱႎ㧗ຠᢙ㊂ :::::::::::::: ․⸥㗄 -A [D ] (100mm×100mm) ⊒ᵈ⠪ޓޓ::::::::::::: ㅍઃవฬ %756 ን჻ㅢ ࡒࠦࡦ࠳ࠢ࠲ᩣᑼળ␠ ฃᷰ႐ᚲฬޓޓ::::::::: ㅍઃవᚲ &'.+8'4;21+06㧕 ⚊ຠࠠ⇟ภޓ:::::::::::::: 64#0501 ຠฬ㩄㨺㩎㩨ޓޓޓ:::::::::::::: 2#4601 ޓޓޓຠဳᩰ ຠฬ 2#460#/':::::::::::::: ຠဳᩰ :::㧛::: ᢙ㧛⚊ᢙ㊂ 36;616#.36; %7561/'454'/#4-5 ⊒ᵈ⠪↪⠨ :::::::::::::::::::: D ฃᵈ⠪ 8'0&14 ::::::: ን჻ㅢ▤ℂ⇟ภ ::::::: ን჻ㅢ▤ℂ⇟ภ ::::::: ን჻ㅢ▤ℂ⇟ภ ::::::::::::::: ޓຠဳᩰ න 70+6 :: ᪿ൮ᢙ 2#%-#)'%1706 :::㧛::: 0::::::::::::::::: ን჻ㅢ▤ℂ⇟ภຠᢙ㊂ 0::::::::::::::::: ຠဳᩰຠᢙ㊂ ን჻ㅢ▤ℂ⇟ภຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨 ຠဳᩰຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨 ን჻ㅢ▤ℂ⇟ภ 0:::::::::: ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨 -B ::::::::::::::㧔ຠဳᩰ㧕 㧔▫ᢙ㧕ޓޓޓ㧔ᢙ㊂㧕 ޓ:▫ޓޓޓޓޓ::: ޓ:▫ޓޓޓޓޓ::: ޓޓޓޓޓ⸘ޓޓ::: 㧔ຠ㩥㨹㩎ᖱႎ㧕 ޓޓޓ::::::: ޓޓޓ::::::: ( 22 ) , -A, B DS501-00010-8v0-J MB85RC16V 1.4 (1) H W L L W H 540 125 75 ( mm) (2) H W L L W H 565 270 180 ( DS501-00010-8v0-J mm) 23 MB85RC16V 2. 2.1 No FPT-8P-M02 3 / / / 1500 1500 10500 ø1.5 +0.1 –0 8±0.1 1.75±0.1 2±0.05 4±0.1 B 0.3±0.05 A B A 5.5±0.1 12 +0.3 –0.1 5.5±0.05 ø1.5 +0.1 –0 SEC.B-B 2.1±0.1 6.4±0.1 0.4 3.9±0.2 SEC.A-A C 2012 FUJITSU SEMICONDUCTOR LIMITED SOL8-EMBOSSTAPE9 : NFME-EMB-X0084-1-P-1 mm 24 DS501-00010-8v0-J MB85RC16V 2.2 IC Index mark ER ( ) ( ) ( ) 2.3 ࡞ⓣኸᴺ E D W2 C B A W1 12 13 14 15 56 12 16 24 r W3 㧦ࡂࡉㇱߩኸᴺ mm No 1 2 3 8 A 254 ±2 4 5 12 254 ±2 6 7 16 330 ±2 254 ±2 9 24 330 ±2 254 ±2 10 11 32 44 330 ±2 100 +2 -0 B 8 330±2 100 +2 -0 150 +2 -0 100 +2 -0 150 +2 -0 100 +2 -0 100±2 C 13±0.2 13 +0.5 -0.2 D 21±0.8 20.5 +1 -0.2 E W1 W2 W3 2±0.5 8.4 +2 -0 14.4 7.9 10.9 r DS501-00010-8v0-J 12.4 +2 -0 18.4 11.9 16.4 +2 -0 22.4 15.4 15.9 24.4 +2 -0 30.4 19.4 23.9 32.4 +2 -0 38.4 27.4 31.9 44.4 +2 -0 50.4 35.4 43.9 47.4 56.4 +2 -0 12.4 +1 -0 +0.1 16.4 +1 -0 24.4 -0 62.4 18.4 22.4 30.4 55.9 59.4 12.4 14.4 16.4 18.4 24.4 26.4 1.0 25 MB85RC16V 2.4 (φ330mm ) φ330 mm 1, 1, 4 1, 4 4 1, 4 ( -A 1 2 3 4 ( E1 4 -B ) 2, 3 4 , G Pb , , ) , , , , , 26 DS501-00010-8v0-J MB85RC16V 2.5 ( (50mm×100mm) [C-3 , (20mm×100mm)] ) 㘈ቴຠဳᩰޓߪޔን჻ㅢຠဳᩰ :::::::::::::: 0:::::::::::::: ㋦㩖㩢㨺㩙㨺㩂 ::: ⸥ຠဳᩰຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨 㧽㧯ޓ㧼㧭㧿㧿 0:::::::::: :::::: C-3 ᬌᩏޓᷣ ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨 ຠᢙ㊂ :::REU :::::::::::::: 㘈ቴຠဳᩰޓߪޔን჻ㅢຠဳᩰ ⸥ຠဳᩰߩ㩔㩨㨺㩄㨺㩎㩨 :::::::: ൮ⵝᐕᣣ #55'/$.'&+0ZZZZZ ::::::::::::::: 㘈ቴຠဳᩰޓߪޔን჻ㅢຠဳᩰ ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨 :::: :::::::::: ൮ⵝㅊ⇟ :::::::::: :::::::::: ን჻ㅢ▤ℂ⇟ภ ຠ㩥㨹㩎ᖱႎ㧗ຠᢙ㊂ :::::::::::::: ․⸥㗄 -A [D ] (100mm×100mm) ⊒ᵈ⠪ޓޓ::::::::::::: ㅍઃవฬ %756 ን჻ㅢ ࡒࠦࡦ࠳ࠢ࠲ᩣᑼળ␠ ฃᷰ႐ᚲฬޓޓ::::::::: ㅍઃవᚲ &'.+8'4;21+06㧕 ⚊ຠࠠ⇟ภޓ:::::::::::::: 64#0501 ຠฬ㩄㨺㩎㩨ޓޓޓ:::::::::::::: 2#4601 ޓޓޓຠဳᩰ ຠฬ 2#460#/':::::::::::::: ຠဳᩰ :::㧛::: ᢙ㧛⚊ᢙ㊂ 36;616#.36; %7561/'454'/#4-5 ⊒ᵈ⠪↪⠨ :::::::::::::::::::: D ฃᵈ⠪ 8'0&14 ::::::: ን჻ㅢ▤ℂ⇟ภ ::::::: ን჻ㅢ▤ℂ⇟ภ ::::::: ን჻ㅢ▤ℂ⇟ภ ::::::::::::::: ޓຠဳᩰ න 70+6 :: ᪿ൮ᢙ 2#%-#)'%1706 :::㧛::: 0::::::::::::::::: ን჻ㅢ▤ℂ⇟ภຠᢙ㊂ 0::::::::::::::::: ຠဳᩰຠᢙ㊂ ን჻ㅢ▤ℂ⇟ภຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨 ຠဳᩰຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨 ን჻ㅢ▤ℂ⇟ภ 0:::::::::: ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨 -B ::::::::::::::㧔ຠဳᩰ㧕 㧔▫ᢙ㧕ޓޓޓ㧔ᢙ㊂㧕 ޓ:▫ޓޓޓޓޓ::: ޓ:▫ޓޓޓޓޓ::: 㧔ຠ㩥㨹㩎ᖱႎ㧕 ޓޓޓ::::::: ޓޓޓ::::::: ( ) DS501-00010-8v0-J , ޓޓޓޓޓ⸘ޓޓ::: -A, B 27 MB85RC16V 2.6 (1) H W L L W H 12, 16 40 24, 32 365 44 50 345 65 56 75 ( mm) (2) H W L L W H 415 400 315 ( 28 mm) DS501-00010-8v0-J MB85RC16V ■ , 10 11 1. “H” “L” “H” “L” 16 18 DS501-00010-8v0-J 29 MB85RC16V MEMO 30 DS501-00010-8v0-J MB85RC16V MEMO DS501-00010-8v0-J 31 MB85RC16V 富士通セミコンダクター株式会社 0120-198-610 222-0033 2-100-45 : http://jp.fujitsu.com/fsl/ 9 PHS 17 ( , ) , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , ,