実装方法（実装方法 / 信頼性 / 保管）

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1.
2.
3.
DB81-10004-1
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1.
1.
1.1
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,
1.
260 °C10
2.
1
1.5 mm
3.
,
4.
,
IC
SIP, ZIP
(260 °CMAX, 10
,
)
,
,
,
,
,
IC
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,
,
,
2
IC
,
,
, IC
DB81-10004-1
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1.
1.2
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,
,
IC
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,
,
,J
,
(BGA)
,
,
,
,
1
1
(1)
(2)
(
,
)
(3)
(4)
(5)
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,
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,
DB81-10004-1
3
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1.
(1)
• IC
•
•
•
•
• IC
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•
• IC
•
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•
• IC
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4
DB81-10004-1
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1.
(2)
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•
(
(
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•
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•
DB81-10004-1
•
5
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1.
1.3
(1)
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2, 3
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,
2 SOP, QFP
0.5mm
w (Typ
) + 0.03 mm
w (Typ
)
W
W
P × 0.6 mm
P − 0.30 mm
SOP
3 BGA
SMD
NSMD
Solder-mask
Opening
Solder-mask
Opening
Pad Pattern
SMD (solder-mask defined)
6
NSMD (nonsolder-mask defined)
Pad Pattern
Solder-mask
Opening
Pad Pattern
Solder-mask
Opening
0.8 mm pitch
FBGA
φ0.48
φ0.38
φ0.35
φ0.45
0.5 mm pitch
FBGA
φ0.325
φ0.225
φ0.225
φ0.325
DB81-10004-1
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1.
(2)
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(3)
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,
(
#250
325)
10
•
•
,
•
,
•
,
, Pb-Sn
,
,
,
Ag-Pd
Ag
2
3%
a)
•
,
•
•
,
b)
•
(
•
)
,
•
•
•
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,
DB81-10004-1
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,
7
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1.
,
,
(4)
150
(
m
)
,
,
,
(
3
)
(5)
,
,
,
(
,
,
,
)
,
,
,
BGA
•
(6)
(
)
,
,
,
: 260 °C MAX
:5
(7)
a)
, b)
, c)
,
a)
8
DB81-10004-1
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1.
b)
(
)
,
,
,
c)
(
(8)
(
)
)
IC
,
: 400 °C Max
:5
Max/
(9)
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1
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•
•
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,
DB81-10004-1
9
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1.
1
27
29 kHz
15 w/l
,
30
(1
)
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,
(10)
(
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(4)
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,
,
10
,
DB81-10004-1
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2.
2.
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2.1
1.
•
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•
•
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•
2.
•
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•
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2.2
,
IC
1.
DB81-10004-1
11
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2.
2.
,
,
,
3.
, 1.
,
,
4.
3.
,
(
)
260 °C
, 4.7 MPa (46
)
5.
,
12
,
DB81-10004-1
/
/
2.
2.3
(1)
,
,
(2)
(3)
,
IC
,
2.4
,
,
,
,
/
,
,
,
2
,
2
: Rnn Smm Jkk Hxx
Xnn SPn Jkk Mxx
Rnn or Xnn :
4
/
RZ0
2
RY0
2
1
R28
2
28
R14
2
14
R08
2
8
R04
2
4
R02
2
2
R00
Xnn
DB81-10004-1
Rnn Smm Jkk Mxx
2
1
nn
13
/
/
2.
(260 °C MAX, 5
Smm or SPn :
)
SZ0
1
SY0
1
1
S28
1
28
S14
1
14
S08
1
8
S04
1
4
S02
1
2
S00
1
SPn
1
Jnn : IPC/JEDEC J-STD-020A
,n
, JEDEC Moisture Sensitivity Level
JEDEC Moisture Sensitivity Level
J01
1
J02
2
J2a
2a
J03
3
J04
4
J05
5
J5a
5a
J06
6
J00
Hnn :
Mnn :
14
5
JEDEC
/
HZ0
2
HY0
2
1
H28
2
28
H14
2
14
H08
2
8
H04
2
4
H02
2
2
6
/
MZ0
2
MY0
2
1
M28
2
28
M14
2
14
M08
2
8
M04
2
4
M02
2
2
DB81-10004-1
/
/
2.
,
4
1
240 °C
235 °C
210 °C
150 ∼190 °C
(b)
RT
(c)
(e)
(d)
(d ’)
(a)
: 1 °C
4 °C/
: 150 °C
190 °C, 60
: 1 °C
4 °C/
: 240 °C MAX. 235 °C
)
: 210 °C
40
(a)
(b)
(c)
(d)
(
(d’)
(e)
120
10
5
2
260 °C
255 °C
220 °C
170 °C ∼190 °C
(b)
RT
(c)
(e)
(d)
(d ’)
(a)
(a)
(b)
(c)
(d)
(
(d’)
: 1 °C
4 °C/
: 170 °C
190 °C, 60
4 °C/
: 1 °C
: 260 °C MAX. 255 °C
)
: 220 °C
80
225 °C
60
230 °C
40
180
10
(e)
DB81-10004-1
15
/
/
2.
6
3
250 °C
245 °C
220 °C
170 °C ∼ 190 °C
(b)
RT
(c)
(e)
(d)
(d ’)
(a)
(a)
: 1 °C
4 °C/
(b)
: 170 °C
(c)
: 1 °C
(d)
: 250 °C MAX.
190 °C, 60
4 °C/
245 °C
(
(d’)
180
10
)
: 220 °C
80
225 °C
60
230 °C
40
(e)
7
(
)
: 30
60
215 °C
200 °C
RT
(a)
(b)
(a)
1 °C
(b)
200 °C
5
6
8 °C/
: 215 °C
,
,
16
DB81-10004-1
/
/
2.
2.5
,
2.6
,
,
,
,
,
3
,
PCT
19
3
(Plastic BCC-48 MB15G202) : BCC
1.
(h)
150 °C
11
1000
0
(
) ∗2
100 °C
46 ∗1
1000
0
(
) ∗2
85 °C/85%RH
25 ∗1
1000
0
54 ∗1
0
11
0
2.
−65 °C
0 °C
100 °C(200 cycle)
PCT
121 °C, 2.03E5 Pa, 168 h
54 ∗1
0
PCT-Bias ∗3
121 °C, 2.03E5 Pa, 96 h
11
0
*1:
*2:
*3: PCT-Bias
DB81-10004-1
150 °C(200 cycle)
:
125 °C, 24 h +
85 °C/85%RH, 48 h + IR 245 °C Max.
3.6 V,
1MHz / 2MHz
3.6 V
17
/
/
2.
4
(Plastic CSOP-48 Flash Memory) : CSOP
1.
(h)
150 °C
(
) ∗2
85 °C/85%RH
11
1000
0
25 ∗1
1000
0
54 ∗1
0
11
0
2.
−65 °C
0 °C
100 °C (200 cycle)
PCT
121 °C, 2.03E5 Pa, 168 h
54 ∗1
0
PCT-Bias ∗2
121 °C, 2.03E5 Pa, 96 h
11
0
*1:
*2:
:
125 °C, 24 h +
85 °C/85%RH, 24 h + IR 245 °C Max.
/ PCT-Bias
5
4.1 V
(FBGA-288 CS36
−65 °C
) : FBGA
150 °C (200 cycle)
54 ∗1
0
PCT
121 °C, 1.72E5 Pa, 168 h
54 ∗1
0
PCT-Bias ∗2
121 °C, 1.72E5 Pa, 96 h
11
0
*1:
:
125 °C, 24 h +
*2: PCT-Bias
85 °C/85%RH, 24 h + IR 235 °C Max.
3.0 V/4.0 V
6
(FBGA-304 CS70B
−65 °C
*:
) : FBGA
150 °C (200 cycle)
121 °C, 1.72E5 Pa, 168 h
PCT
18
150 °C (200 cycle)
:
125 °C, 24 h +
34 ∗
0
34 ∗
0
85 °C/85%RH, 24 h + IR 235 °C Max.
DB81-10004-1
/
/
2.
7
(FD-FBGA-60 MB81F641642G) : BGA
1.
(h)
150 °C
(
) ∗2
85 °C/85%RH
11
1000
0
18 ∗1
1000
0
53 ∗1
0
11
0
2.
−65 °C
0 °C
150 °C (200 cycle)
100 °C (200 cycle)
PCT
121 °C, 1.72E5 Pa, 168 h
54 ∗1
0
PCT-Bias ∗3
121 °C, 1.72E5 Pa, 96 h
11
0
*1:
125 °C, 24 h +
:
*2:
85 °C/85%RH, 24 h + IR 245 °C Max.
4.5 V,
*3: PCT-Bias
10 MHz
4.5 V,
8
(Over mold BGA-256 CS70B
500 kHz
) : BGA
1.
(h)
150 °C
11
1000
0
(
) ∗2
125 °C
54 ∗1
1000
0
(
) ∗2
85 °C/85%RH
25 ∗1
1000
0
(
) ∗2
−55 °C
11
1000
0
150 °C (200 cycle)
54 ∗1
0
11
0
2.
−65 °C
0 °C
PCT
121 °C, 1.72E5 Pa, 168 h
54 ∗1
0
PCT-Bias ∗3
121 °C, 1.72E5 Pa, 96 h
11
0
*1:
*2:
*3: PCT-Bias
DB81-10004-1
100 °C (200 cycle)
:
125 °C, 24 h +
30 °C/80%RH, 72 h + IR 235 °C Max.
3.0 V/4.0 V,
8 MHz
3.0 V/4.0 V
19
/
/
2.
9
(
Chip Stacked FBGA-73 MB84VD22181EE) : FBGA
1.
(h)
150 °C
11
1000
0
(
) ∗2
125 °C
54 ∗1
1000
0
(
) ∗3
85 °C/85%RH
25 ∗1
1000
0
46 ∗1
0
2.
−65 °C
150 °C (200 cycle)
PCT
121 °C, 1.72E5 Pa, 168 h
46 ∗1
0
PCT-Bias ∗3
121 °C, 1.72E5 Pa, 96 h
11
0
*1:
:
*2:
*3:
125 °C, 24 h +
85 °C/85%RH, 12 h + IR 245 °C Max.
4.0 V,
1 MHz
/ PCT-Bias
10
4.0 V
(Plastic TSOP-48 Flash Memory) : SOP
1.
(h)
(
) ∗2
(
) ∗3
150 °C
Data pattern Zero
Data pattern CKBD
417
364
1000
1000
0
0
150 °C
605
1000
0
85 °C/85%RH
110
55∗1
1000
1000
0
0
215∗1
0
165∗1
0
2.
−65 °C
121 °C, 2.03E5 Pa, 168 h
PCT
*1:
20
150 °C (200 cycle)
:
125 °C, 24 h +
*2:
3.6 V,
*3:
3.6 V
85 °C/85%RH, 20 h + IR 245 °C Max.
1 MHz
DB81-10004-1
/
/
2.
11
(Plastic TSOP-54(LOC) MB81F641642D) : SOP
1.
(h)
150 °C
11
1000
0
(
) ∗2
125 °C
46∗1
1000
0
(
) ∗2
85 °C/85%RH
46∗1
1000
0
(
) ∗2
−55 °C
11
1000
0
54∗1
0
11
0
2.
−65 °C
150 °C (200 cycle)
0 °C
100 °C (200 cycle)
PCT
121 °C, 2.03E5 Pa, 168 h
54∗1
0
PCT-Bias ∗3
121 °C, 2.03E5 Pa, 96 h
11
0
*1:
125 °C, 24 h +
:
*2:
85 °C/85%RH, 24 h + IR 245 °C Max.
4.5 V,
*3: PCT-Bias
10 MHz
4.5 V
12
(Plastic TQFP-100 CS70B
) : QFP
1.
(h)
150 °C
11
1000
0
(
) ∗2
125 °C
46 ∗1
1000
0
(
) ∗2
85 °C/85%RH
11 ∗1
1000
0
(
) ∗2
−55 °C
11
1000
0
150 °C (200 cycle)
54∗1
0
11
0
2.
−65 °C
0 °C
PCT
121 °C, 2.03E5 Pa, 168 h
54∗1
0
PCT-Bias ∗3
121 °C, 2.03E5 Pa, 96 h
11
0
*1:
*2:
*3: PCT-Bias
DB81-10004-1
100 °C (200 cycle)
:
125 °C, 24 h +
30 °C/80%RH, 72 h + IR 245 °C Max.
3.0 V/4.0 V,
8 MHz
3.0 V/4.0 V
21
/
/
2.
13
(TAB-BGA-720 CS70B
) : BGA
1.
(h)
150 °C
11
1000
0
(
) ∗2
100 °C
18 ∗1
1000
0
(
) ∗2
85 °C/85%RH
18 ∗1
1000
0
(
) ∗2
−55 °C
11
1000
0
46∗1
0
11
0
2.
−55 °C
0 °C
125 °C (500 cycle)
100 °C (200 cycle)
PCT
121 °C, 1.72E5 Pa, 168 h
46∗1
0
PCT-Bias ∗3
121 °C, 1.72E5 Pa, 96 h
11
0
*1:
125 °C, 24 h +
:
*2:
30 °C/80%RH, 72 h + IR 235 °C Max.
3.0 V/4.0 V,
*3: PCT-Bias
8 MHz
3.0 V/4.0 V
14
(Enhanced BGA-672 CS70B
) : BGA
1.
(h)
150 °C
11
1000
0
(
) ∗2
125 °C
18 ∗1
1000
0
(
) ∗2
85 °C/85%RH
18 ∗1
1000
0
(
) ∗2
−55 °C
11
1000
0
125 °C (500 cycle)
54 ∗1
0
11
0
2.
−55 °C
0 °C
PCT
121 °C, 1.72E5 Pa, 168 h
54∗1
0
PCT-Bias ∗3
121 °C, 1.72E5 Pa, 72 h
11
0
*1:
*2:
*3: PCT-Bias
22
100 °C (200 cycle)
:
125 °C, 24 h +
30 °C/80%RH, 96 h + IR 230 °C Max. (3 times)
3.0 V/4.0 V,
8 MHz
3.0 V/4.0 V
DB81-10004-1
/
/
2.
15
(Plastic HQFP-304 CS70B
) : QFP
1.
(h)
150 °C
11
1000
0
(
) ∗2
125 °C
46 ∗1
1000
0
(
) ∗2
85 °C/85%RH
25 ∗1
1000
0
(
) ∗2
−55 °C
11
1000
0
150 °C (200 cycle)
54 ∗1
0
2.
−65 °C
PCT
121 °C, 2.03E5 Pa, 168 h
54 ∗1
0
PCT-Bias ∗3
121 °C, 2.03E5 Pa, 96 h
11
0
*1:
125 °C, 24 h +
:
*2:
85 °C/85%RH, 24 h + IR 245 °C Max.
3.0 V/4.0 V,
*3: PCT-Bias
8 MHz
3.0 V/4.0 V
16
(Multichip Stacked LGA-73 MB84VD22182EC) : FLGA
1.
(h)
(
) ∗2
85 °C/85%RH
18∗1
1000
0
54∗1
0
2.
−55 °C
PCT
121 °C, 1.72E5 Pa, 168 h
54∗1
0
PCT-Bias ∗2
121 °C, 1.72E5 Pa, 96 h
11
0
*1:
:
+
*2:
DB81-10004-1
125 °C (500 cycle)
125 °C, 24 h +
85 °C/85%RH, 12 h + IR 245 °C Max.
85 °C/85%RH, 12 h + IR 245 °C Max.
/ PCT-Bias
4.0 V
23
/
/
2.
17
(S-CSP MB29SL800TD)
1.
(h)
(
150 °C
11
1000
0
85 °C/85%RH
18
1000
0
150 °C (200C)
54∗1
0
121 °C, 2.03E5 Pa, 168 h
54∗1
0
14700 m/s2 0.5 msec
XYZ
4
12
0
200 Hz/4
196 m/s2 20
XYZ
4
12
0
12∗1
0
) ∗2
2.
−65 °C
PCT
29400 m/s2 0.5 msec
XYZ
1
*1:
:
*2:
125 °C, 24 h +
85 °C/85%, 48 h + IR 240 °C Max.
: 2.5 V
18
(LQFP-120 CS70
) : QFP
1.
−65 °C
121 °C, 100% RH : 2.03E5
PCT
*:
:
+
(125 °C, 24 h) +
Pa, 168 h
54∗
0
54∗
0
(70 °C/85%RH, 20 h) + IR 260 °C Max.
(70 °C/85%RH, 20 h) + IR 260 °C Max.
2.
Sn-Ag-Cu (
24
150 °C (200cyc)
Solderability Test
)
8h
245 °C, 5s
15
0
DB81-10004-1
/
/
2.
19
(QFP-80
1.
) : QFP
Life Test
(h)
150 °C
VDD = 6.0 V
CLK FREQ. = 2 MHz
31∗1
1000
0
85 °C/85%RH
VDD = 6.0 V
CLK FREQ. = 2 MHz
18∗1
1000
0
150 °C
12∗1
1000
0
150 °C (200cyc)
18 *
0
PCT
121 °C, 100% RH : 2.03E5 Pa, 168 h
18 *
0
PCT-Bias
130 °C, 85% RH : 2.33E5 Pa, 96 h
VDD = 6.0 V, CLK FREQ. = 2 MHz
11 *
0
2.
−65 °C
*:
:
+
(30 °C/80%RH, 72 h) + IR 250 °C Max.
(30 °C/80%RH, 48 h) + IR 250 °C Max.
3.
Sn-Ag-Cu (
DB81-10004-1
(125 °C, 24 h) +
Solderability Test
)
8h
245 °C, 5s
15
0
25
/
/
3.
3.
•
Dry Package
)
(5
30
, Dry Package
(40%RH
),
(70%RH
(5
30
),
70%RH)
•
•
,
,
•
,
•
,
,
,
,
•
,
,
,
,
•
,
,
,
,
,
,
•
,
,
,
,
,
,
(
,
,
,
,
,
),
(
)
,
,
,
,
•
,
,
,
•
,
,
,
,
,
,
,
,
Copyright ©2004-2006 FUJITSU LIMITED All rights reserved.
26
DB81-10004-1