DB155G thru DB157G Single Phase Glass Passivated Silicon Bridge Rectifier VRRM = 600 V - 1000 V IO = 1.5 A Features • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique DB Package • High surge current capability • Small size, simple installation • Types from 600 V up to 1000 V VRRM • Not ESD Sensitive Mechanical Data Case: Molded plastic Terminals: Plated terminals, solderable per MIL-STD202, Method 208 Polarity: Polarrity symbols marked on the body Mounting position: Any Maximum ratings at Tc = 25 °C, unless otherwise specified P Parameter t S b l Symbol C diti Conditions DB155G DB156G DB157G U it Unit Repetitive peak reverse voltage VRRM 600 800 1000 V RMS reverse voltage VRMS 420 560 700 V DC blocking voltage Operating temperature Storage temperature VDC Tj Tstg 800 -55 to 150 -55 to 150 1000 -55 to 150 -55 to 150 V °C °C 600 -55 to 150 -55 to 150 Electrical characteristics at Tc = 25 °C, unless otherwise specified Single phase, half sine wave, 60 Hz, resistive or inductive load For capacitive load derate current by 20% Parameter Symbol Conditions DB155G DB156G DB157G Unit Maximum average forward rectified current IO Ta = 40 °C 1.5 1.5 1.5 A Peak forward surge current IFSM tp = 8.3 ms, half sine 50 50 50 A Maximum instantaneous forward voltage drop VF IF = 1.5 A 1.1 1.1 1.1 V Maximum DC reverse current at rated DC blocking voltage IR Rating for fusing I2t Typical junction capacitance Typical thermal resistance Ta = 25 °C 5 5 5 Ta = 125 °C 500 500 500 t < 8.3 ms 10 10 14 36 14 36 10 14 Cj RΘJA www.genesicsemi.com/silicon-products/bridge-rectifiers/ 1 36 μA 10 A2sec pF °C/W DB155G thru DB157G www.genesicsemi.com/silicon-products/bridge-rectifiers/ 2 DB155G thru DB157G Package dimensions and terminal configuration Product is marked with part number and terminal configuration. Di Dimensions i iin iinches h and d ((millimeters) illi t ) www.genesicsemi.com/silicon-products/bridge-rectifiers/ 3