KBPC2506T/W thru KBPC2510T/W Single Phase Silicon Bridge Rectifier VRRM = 600 V - 1000 V IO = 25 A Features • High efficiency • Silicon junction • Metal case • Types from 600 V to 1000 V VRRM KBPC-T/W Package • Not ESD Sensitive Mechanical Data Case: Mounted in the bridge encapsulation Mounting: Hole for #10 screw Polarity: Marked on case Maximum ratings at Tc = 25 °C, unless otherwise specified (KBPCXXXXT uses KBPC-T package while KBPCXXXXW uses KBPC-W package) Parameter Symbol Conditions KBPC2506T/W KBPC2508T/W KBPC2510T/W Unit 1000 V Repetitive peak reverse voltage VRRM 600 800 RMS reverse voltage VRMS 420 560 700 V DC blocking voltage Operating temperature Storage temperature VDC Tj Tstg 600 -55 to 150 -55 to 150 800 -55 to 150 -55 to 150 1000 -55 to 150 -55 to 150 V °C °C Electrical characteristics at Tc = 25 °C, unless otherwise specified Single phase, half sine wave, 60 Hz, resistive or inductive load For capacitive load derate current by 20% Conditions KBPC2506T/W KBPC2508T/W KBPC2510T/W Unit IO Tc = 55 °C 25 25 25 A Peak forward surge current Maximum instantaneous forward voltage per leg Maximum DC reverse current at rated DC blocking voltage per leg IFSM 8.3 ms half sine-wave 350 350 350 A VF IF = 12.5 A 1.1 1.1 1.1 V Tc = 25 °C 5 5 5 Tc = 100 °C Typical junction capacitance 1 Thermal characteristics Cj 500 300 500 300 500 300 RΘJC 1.9 1.9 1.9 Parameter Maximum average forward rectified current Typical thermal resistance 2 1 2 Symbol IR - Measured ay 1 MHz and applied reverse voltage of 4.0 V D.C. - Device mounted on 300 mm x 300 mm x 1.6 mm Cu plate heatsink www.genesicsemi.com/silicon-products/bridge-rectifiers/ 1 μA pF °C/W KBPC2506T/W thru KBPC2510T/W www.genesicsemi.com/silicon-products/bridge-rectifiers/ 2 KBPC2506T/W thru KBPC2510T/W Package dimensions and terminal configuration Product is marked with part number and terminal configuration. Dimensions in inches and (millimeters) www.genesicsemi.com/silicon-products/bridge-rectifiers/ 3