MUR10005CT thru MUR10020CTR Silicon Super Fast Recovery Diode VRRM = 50 V - 200 V IF(AV) = 100 A Features • High Surge Capability • Types from 50 V to 200 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MUR10005CT(R) MUR10010CT(R) MUR10020CT(R) Unit 100 200 V Repetitive peak reverse voltage VRRM 50 RMS reverse voltage VRMS 35 70 140 V DC blocking voltage Operating temperature Storage temperature VDC Tj Tstg 50 -55 to 150 -55 to 150 100 -55 to 150 -55 to 150 200 -55 to 150 -55 to 150 V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Average forward current (per pkg) Peak forward surge current (per leg) Maximum instantaneous forward voltage (per leg) Maximum reverse current at rated DC blocking voltage (per leg) Maximum reverse recovery time (per leg) Symbol Conditions MUR10005CT(R) MUR10010CT(R) MUR10020CT(R) Unit IF(AV) TC = 140 °C 100 100 100 A IFSM tp = 8.3 ms, half sine 1500 1500 1500 A VF IFM = 50 A, Tj = 25 °C 1.0 1.0 1.0 V Tj = 25 °C 25 25 25 μA Tj = 125 °C 3 3 3 mA IF=0.5 A, IR=1.0 A, IRR= 0.25 A 75 75 75 nS 1.0 1.0 1.0 °C/W IR Trr Thermal characteristics Maximum thermal resistance, junction - case (per leg) RΘJC www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/ 1 MUR10005CT thru MUR10020CTR www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/ 2 MUR10005CT thru MUR10020CTR Package dimensions and terminal configuration Product is marked with part number and terminal configuration. www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/ 3