MURT30005 thru MURT30020R Silicon Super Fast Recovery Diode VRRM = 50 V - 200 V IF(AV) = 300 A Features • High Surge Capability • Types from 50 V to 200 V VRRM Three Tower Package • Isolation Type Package • Electrically Isolated base plate • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) MURT30005(R) MURT30010(R) MURT30020(R) Unit VRRM 50 100 200 V RMS reverse voltage VRMS 35 71 141 V DC blocking voltage Operating temperature Storage temperature VDC Tj Tstg 50 -55 to 150 -55 to 150 100 -55 to 150 -55 to 150 200 -55 to 150 -55 to 150 V °C °C Parameter Symbol Repetitive peak reverse voltage Conditions Electrical characteristics, at Tj = 25 °C, unless otherwise specified Symbol Conditions MURT30005(R) MURT30010(R) MURT30020(R) Unit IF(AV) TC = 125 °C 300 300 300 A IFSM tp = 8.3 ms, half sine 2750 2750 2750 A Maximum instantaneous forward voltage (per leg) VF IFM = 150 A, Tj = 25 °C 1.0 1.0 1.0 V Maximum instantaneous reverse current at rated DC blocking voltage (per leg) IR Tj = 25 °C 25 25 25 μA Tj = 125 °C 2 2 2 mA Maximum reverse recovery time (per leg) Trr IF=0.5 A, IR=1.0 A, IRR= 0.25 A 100 100 100 nS 0.40 0.40 0.40 °C/W Parameter Average forward current (per pkg) Peak forward surge current (per leg) Thermal characteristics Thermal resistance, junction case (per leg) RΘJC www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/ 1 MURT30005 thru MURT30020R www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/ 2 MURT30005 thru MURT30020R Package dimensions and terminal configuration Product is marked with part number and terminal configuration. www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/ 3