MURTA20060 thru MURTA200120R
Silicon Super Fast
Recovery Diode
VRRM = 600 V - 1200 V
IF(AV) = 200 A
Features
• High Surge Capability
• Types from 600 V to 1200 V VRRM
Heavy Three Tower Package
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MURTA20060(R)
MURTA200120(R)
Unit
1200
V
Repetitive peak reverse voltage
VRRM
600
RMS reverse voltage
VRMS
424
---
V
DC blocking voltage
Operating temperature
Storage temperature
VDC
Tj
Tstg
600
-55 to 150
-55 to 150
1200
-55 to 150
-55 to 150
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Conditions
MURTA20060(R)
MURTA200120(R)
Unit
Average forward current (per pkg)
IF(AV)
TC = 100 °C
200
200
A
Peak forward surge current (per leg)
IFSM
tp = 8.3 ms, half sine
2000
2000
A
Maximum instantaneous forward
voltage (per leg)
VF
IFM = 100 A, Tj = 25 °C
1.7
2.6
V
Maximum instantaneous reverse
current at rated DC blocking voltage
(per leg)
IR
Tj = 25 °C
25
25
μA
Tj = 125 °C
5
5
mA
Maximum reverse recovery time (per
leg)
Trr
IF=0.5 A, IR=1.0 A,
IRR= 0.25 A
110
150
ns
0.45
0.45
°C/W
Parameter
Thermal characteristics
Maximum thermal resistance, junction case (per leg)
RΘJC
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
1
MURTA20060 thru MURTA200120R
MURTA20060(R) Figures:
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
2
MURTA20060 thru MURTA200120R
MURTA200120(R) Figures:
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
3
MURTA20060 thru MURTA200120R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
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