MURH10005 thru MURH10020R
Silicon Super Fast
Recovery Diode
VRRM = 50 V - 200 V
IF(AV) = 100 A
Features
• High Surge Capability
• Types from 50 V to 200 V VRRM
D-67 Package
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
MURH10005(R)
MURH10010(R)
MURH10020(R)
Unit
VRRM
50
100
200
V
RMS reverse voltage
VRMS
35
70
140
V
DC blocking voltage
Operating temperature
Storage temperature
VDC
Tj
Tstg
50
-55 to 150
-55 to 150
100
-55 to 150
-55 to 150
200
-55 to 150
-55 to 150
V
°C
°C
Parameter
Symbol
Repetitive peak reverse voltage
Conditions
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Conditions
MURH10005(R)
MURH10010(R)
MURH10020(R)
Unit
Average forward current (per
pkg)
IF(AV)
TC = 140 °C
100
100
100
A
Peak forward surge current
IFSM
tp = 8.3 ms, half sine
2000
2000
2000
A
Maximum instantaneous
forward voltage
VF
IFM = 100 A, Tj = 25 °C
1.0
1.0
1.0
V
Maximum reverse current at
rated DC blocking voltage
IR
Parameter
Maximum reverse recovery time
Trr
Tj = 25 °C
25
25
25
μA
Tj = 125 °C
3
3
3
mA
IF=0.5 A, IR=1.0 A,
IRR= 0.25 A
75
75
75
nS
0.45
0.45
0.45
°C/W
Thermal characteristics
Maximum thermal resistance,
junction - case
RΘJC
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MURH10005 thru MURH10020R
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MURH10005 thru MURH10020R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
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