MUR20005CT thru MUR20020CTR Silicon Super Fast Recovery Diode VRRM = 50 V - 200 V IF(AV) = 200 A Features • High Surge Capability • Types from 50 V to 200 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MUR20005CT (R) MUR20010CT (R) MUR20020CT (R) Unit 200 V Repetitive peak reverse voltage VRRM 50 RMS reverse voltage VRMS 35 70 140 V DC blocking voltage Operating temperature Storage temperature VDC Tj Tstg 50 -55 to 150 -55 to 150 100 -55 to 150 -55 to 150 200 -55 to 150 -55 to 150 V °C °C MUR20020CT (R) Unit 100 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Average forward current (per pkg) Peak forward surge current (per leg) Maximum instantaneous forward voltage (per leg) Maximum reverse current at rated DC blocking voltage (per leg) Maximum reverse recovery time (per leg) Symbol Conditions IF(AV) TC = 140 °C 200 200 200 A IFSM tp = 8.3 ms, half sine 2000 2000 2000 A VF IFM = 100 A, Tj = 25 °C 1.0 1.0 1.0 V Tj = 25 °C 25 25 25 μA Tj = 125 °C 3 3 3 mA IF=0.5 A, IR=1.0 A, IRR= 0.25 A 75 75 75 nS 0.45 0.45 0.45 °C/W IR Trr MUR20005CT (R) MUR20010CT (R) Thermal characteristics Maximum thermal resistance, junction - case (per leg) RΘJC www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/ 1 MUR20005CT thru MUR20020CTR www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/ 2 MUR20005CT thru MUR20020CTR Package dimensions and terminal configuration Product is marked with part number and terminal configuration. www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/ 3