MUR20040CT thru MUR20060CTR Silicon Super Fast Recovery Diode VRRM = 400 V - 600 V IF(AV) = 200 A Features • High Surge Capability • Types from 400 to 600 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MUR20040CT (R) MUR20060CT (R) Unit Repetitive peak reverse voltage VRRM 400 600 V RMS reverse voltage VRMS 280 420 V DC blocking voltage Operating temperature Storage temperature VDC Tj Tstg 400 -55 to 150 -55 to 150 600 -55 to 150 -55 to 150 V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Symbol Conditions MUR20040CT (R) MUR20060CT (R) Unit Average forward current (per pkg) IF(AV) TC = 140 °C 200 200 A Peak forward surge current (per leg) IFSM tp = 8.3 ms, half sine 2000 2000 A Maximum instantaneous forward voltage (per leg) VF IFM = 100 A, Tj = 25 °C 1.3 1.7 V Maximum reverse current at rated DC blocking voltage (per leg) IR 25 3 25 3 μA mA Maximum reverse recovery time (per leg) Trr Tj = 25 °C Tj = 125 °C IF=0.5 A, IR=1.0 A, IRR= 0.25 A 90 110 nS 0.45 0.45 °C/W Parameter Thermal characteristics Maximum thermal resistance, junction - case (per leg) RΘJC www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/ 1 MUR20040CT thru MUR20060CTR www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/ 2 MUR20040CT thru MUR20060CTR Package dimensions and terminal configuration Product is marked with part number and terminal configuration. www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/ 3