GA01PNS80-220 - GeneSiC Semiconductor

GA01PNS80-220
Silicon Carbide
PiN Diode
VRRM
IF (Tc=25°C)
Features
Package





 RoHS Compliant
8 kV blocking
175 °C operating temperature
Fast turn off characteristics
Soft reverse recovery characteristics
Ultra-Fast high temperature switching
=
=
8.0 kV
2A
PIN 1
2
1
PIN 2
Advantages
Applications
 Reduced stacking
 Reduced system complexity/Increased reliability





Voltage Multiplier
Ignition/Trigger Circuits
Oil/Downhole
Lighting
Defense
Maximum Ratings at Tj = 175 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
Continuous forward current
RMS forward current
Operating and storage temperature
Symbol
VRRM
IF
IF(RMS)
Tj , Tstg
Conditions
Values
8
2
1
-55 to 175
Unit
kV
A
A
°C
Electrical Characteristics at Tj = 175 °C, unless otherwise specified
Parameter
Symbol
Diode forward voltage
VF
Reverse current
IR
Total reverse recovery charge
Qrr
Switching time
ts
Total capacitance
C
Total capacitive charge
QC
Apr 2015
Conditions
IF = 2 A, Tj = 25 °C
IF = 2 A, Tj = 175 °C
VR = 8 kV, Tj = 25 °C
VR = 8 kV, Tj = 175 °C
VR = 1000 V
IF ≤ IF,MAX
IF = 1.5 A
dIF/dt = 70 A/μs
VR = 1000 V
Tj = 175 °C
IF = 1.5 A
VR = 1 V, f = 1 MHz, Tj = 25 °C
VR = 400 V, f = 1 MHz, Tj = 25 °C
VR = 1000 V, f = 1 MHz, Tj = 25 °C
VR = 1000 V, f = 1 MHz, Tj = 25 °C
min.
Values
typ.
6.1
4.7
4
4
max.
Unit
V
µA
558
nC
< 236
ns
http://www.genesicsemi.com/commercial-sic/sic-ultra-high-voltage-pin-thyristors/
26
5
4
5.4
pF
nC
Page 1 of 4
GA01PNS80-220
Figure 1: Typical Forward Characteristics
Figure 2: Typical Reverse Characteristics at 25°C
Figure 3: Typical Junction Capacitance vs Reverse Voltage
Characteristics
Figure 4: Typical Turn Off Characteristics at Ik = 0.5 A and
VR = 1000 V
Figure 5: Typical Turn Off Characteristics at Tj = 175°C and
VR = 1000 V
Figure 6: Reverse Recovery Charge vs Cathode Current
Apr 2015
http://www.genesicsemi.com/commercial-sic/sic-ultra-high-voltage-pin-thyristors/
Page 2 of 4
GA01PNS80-220
Figure 7: Reverse Recovery Time vs Cathode Current
Package Dimensions:
PACKAGE OUTLINE
0.440 (11.18)
0.036 (0.91)
0.052 (1.32)
A
K
0.280 (7.11)
GA01PNS80
0.085 (2.16)
0.570 (14.48)
Lot Code
XXXXXX
0.052 (1.32)
0.036 (0.91)
0.360 (9.14)
0.360 (9.14)
0.570 (14.48)
0.570 (14.48)
0.25 (6.35)
0.016 (0.41)
0.016 (0.41)
0.080 (2.03)
0.080 (2.03)
0.180 (4.57)
NOTE
1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER.
2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS
Apr 2015
http://www.genesicsemi.com/commercial-sic/sic-ultra-high-voltage-pin-thyristors/
Page 3 of 4
GA01PNS80-220
Revision History
Date
2015/04/30
2014/11/07
Revision
1
0
Comments
Updated Electrical Characteristics
Initial release
Supersedes
Published by
GeneSiC Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166
GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice.
GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any
intellectual property rights is granted by this document.
Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft
navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal
injury and/or property damage.
Apr 2015
http://www.genesicsemi.com/commercial-sic/sic-ultra-high-voltage-pin-thyristors/
Page 4 of 4
GA01PNS80-220
SPICE Model Parameters
This is a secure document. Please copy this code from the SPICE model PDF file on our website
(http://www.genesicsemi.com/images/products_sic/thyristor/GA01PNS80-220_SPICE.pdf) into
LTSPICE (version 4) software for simulation of the GA01PNS80-220.
*
MODEL OF GeneSiC Semiconductor Inc.
*
*
$Revision:
1.1
$
*
$Date:
30-APR-2015
$
*
*
GeneSiC Semiconductor Inc.
*
43670 Trade Center Place Ste. 155
*
Dulles, VA 20166
*
*
COPYRIGHT (C) 2014 GeneSiC Semiconductor Inc.
*
ALL RIGHTS RESERVED
*
* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY
* OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A
* PARTICULAR PURPOSE."
* Models accurate up to 2 times rated drain current.
*
* Start of GA01PNS80-220 SPICE Model
*
. MODEL GA01PNS80 D
+ IS
9.2491e-015
+ RS
1.02512
+ N
3.3373
+ IKF
0.00011784
+ EG
3.23
+ XTI
25
+ TRS1
-0.0024
+ CJO
2.7E-11
+ VJ
2.304
+ M
0.376
+ FC
0.5
+ BV
8000
+ IBV
1.00E-03
+ VPK
8000
+ IAVE
1
+ TYPE
SiC_PiN
+ MFG
GeneSiC_Semi
*
* End of GA01PNS80-220 SPICE Model
Apr 2015
http://www.genesicsemi.com/commercial-sic/sic-ultra-high-voltage-pin-thyristors/
Page 1 of 1