MBR60030CT(R)L Low VF Silicon Power Schottky Diode VRRM = 30 V IF(AV) = 600 A Features • High Surge Capability • Type 30 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Symbol Parameter Conditions MBR60030CT(R)L Unit Maximum recurrent peak reverse voltage VRRM 30 V Maximum RMS voltage VRMS 21 V Maximum M i DC bl blocking ki voltage lt Operating temperature Storage temperature VDC Tj Tstg 30 -55 to 150 -55 to 150 V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Symbol Parameter Conditions MBR60030CT(R)L Unit Average forward current (per pkg) IF(AV) TC = 100 °C 600 A Peak forward surge current IFSM tp = 8.3 ms, half sine 4000 A Maximum instantaneous forward voltage (per leg) VF IFM = 300 A, Tj = 25 °C 0.58 V Maximum instantaneous reverse current at rated DC blocking voltage (per leg) IR Tj = 25 °C 3 Tj = 100 °C 250 (per leg) mA Thermal characteristics Maximum thermal resistance, junction - case (per leg) www.genesicsemi.com/silicon-products/schottky-rectifiers/ RΘJC 0.28 1 °C/W MBR60030CT(R)L www.genesicsemi.com/silicon-products/schottky-rectifiers/ 2 MBR60030CT(R)L Package dimensions and terminal configuration Product is marked with part number and terminal configuration. www.genesicsemi.com/silicon-products/schottky-rectifiers/ 3