MBRF120150 thru MBRF120200R Silicon Power Schottky Diode VRRM = 150 V - 200 V IF(AV) = 120 A Features • High Surge Capability • Types from 150 V to 200 V VRRM TO-244AB Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature MBRF120150(R) MBRF120200(R) Unit VRRM 150 200 V VRMS 106 141 V VDC Tj Tstg 150 -55 to 150 -55 to 150 200 -55 to 150 -55 to 150 V °C °C Symbol Conditions Electrical characteristics, at Tj = 25 °C, unless otherwise specified Conditions MBRF120150(R) MBRF120200(R) Unit IF(AV) TC = 125 °C 120 120 A IFSM tp = 8.3 ms, half sine 800 800 A Maximum forward voltage (per leg) VF IFM = 60 A, Tj = 25 °C 0.88 0.92 V Reverse current at rated DC blocking voltage (per leg) IR Tj = 25 °C Tj = 100 °C Tj = 150 °C 1 10 30 1 10 30 mA 0.80 0.80 °C/W Parameter Average forward current (per pkg) Peak forward surge current (per leg) Symbol Thermal characteristics Thermal resistance, junction-case (per leg) RΘJC www.genesicsemi.com/silicon-products/schottky-rectifiers/ 1 MBRF120150 thru MBRF120200R www.genesicsemi.com/silicon-products/schottky-rectifiers/ 2 MBRF120150 thru MBRF120200R Package dimensions and terminal configuration Product is marked with part number and terminal configuration. www.genesicsemi.com/silicon-products/schottky-rectifiers/ 3