MBRH15035(R)L
Low VF Silicon Power
Schottky Diode
VRRM = 35 V
IF(AV) = 150 A
Features
• High Surge Capability
• Type 35 V VRRM
D-67 Package
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBRH15035(R)L
Unit
Maximum recurrent peak reverse voltage
VRRM
35
V
Maximum RMS voltage
VRMS
25
V
Maximum DC blocking voltage
Operating temperature
Storage temperature
VDC
Tj
Tstg
35
-55 to 150
-55 to 150
V
°C
°C
MBRH15035(R)L
Unit
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Average forward current
IF(AV)
TC = 100 °C
150
A
Peak forward surge current
IFSM
tp = 8.3 ms, half sine
2000
A
Maximum instantaneous forward voltage
VF
IFM = 150 A, Tj = 25 °C
0.6
V
Maximum instantaneous reverse
current at rated DC blocking voltage
IR
Tj = 25 °C
3
Tj = 100 °C
150
mA
Thermal characteristics
Maximum thermal resistance,
junction - case
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RΘJC
0.40
1
°C/W
MBRH15035(R)L
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MBRH15035(R)L
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
D
F
G
K
E
B
H
C
J
L
A
Inches
Millimeters
Min
Max
Min
Max
A
1.515
1.560
38.48
39.62
B
0.725
0.775
18.42
19.69
C
0.595
0.625
15.11
15.88
D
1.182
1.192
30.02
30.28
E
0.736
0.744
18.70
18.90
F
0.152
0.160
3.86
4.061
G
1/4–20 UNC
H
0.540
0.580
13.72
14.73
J
0.156
0.160
3.96
4.06
K
0.480
0.492
12.20
12.50
L
0.120
0.130
3.05
3.30
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