MBRT40035(R)L Low VF Silicon Power Schottky Diode VRRM = 35 V IF(AV) = 400 A Features • High Surge Capability • Type 35 V VRRM Three Tower Package • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Symbol Parameter Conditions MBRT40035(R)L Unit Maximum recurrent peak reverse voltage VRRM 35 V Maximum RMS voltage VRMS 25 V Maximum M i DC bl blocking ki voltage lt Operating temperature Storage temperature VDC Tj Tstg 35 -55 to 150 -55 to 150 V °C °C Conditions MBRT40035(R)L Unit Electrical characteristics, at Tj = 25 °C, unless otherwise specified Symbol Parameter Average forward current (per pkg) IF(AV) TC = 100 °C 400 A Peak forward surge current IFSM tp = 8.3 ms, half sine 3000 A Maximum instantaneous forward voltage (per leg) VF IFM = 200 A, Tj = 25 °C 0.60 V Maximum instantaneous reverse current at rated DC blocking voltage (per leg) IR Tj = 25 °C 3 Tj = 100 °C 250 (per leg) mA Thermal characteristics Maximum thermal resistance, junction - case (per leg) www.genesicsemi.com/silicon-products/schottky-rectifiers/ RΘJC 0.35 1 °C/W MBRT40035(R)L www.genesicsemi.com/silicon-products/schottky-rectifiers/ 2 MBRT40035(R)L Package dimensions and terminal configuration Product is marked with part number and terminal configuration. www.genesicsemi.com/silicon-products/schottky-rectifiers/ 3