MBRTA80020 thru MBRTA80040R Silicon Power Schottky Diode VRRM = 20 V - 40 V IF(AV) = 800 A Features • High Surge Capability • Types from 20 V to 40 V VRRM Heavy Three Tower Package • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature Symbol Conditions MBRTA80020(R) MBRTA80030(R) MBRTA80035(R) MBRTA80040(R) Unit VRRM 20 30 35 40 V VRMS 14 21 25 28 V VDC Tj Tstg 20 -55 to 150 -55 to 150 30 -55 to 150 -55 to 150 35 -55 to 150 -55 to 150 40 -55 to 150 -55 to 150 V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Symbol Conditions Average forward current (per pkg) IF(AV) TC = 100 °C 800 800 800 800 A Peak forward surge current (per leg) IFSM tp = 8.3 ms, half sine 6000 6000 6000 6000 A Maximum instantaneous forward voltage (per leg) VF IFM = 400 A, Tj = 25 °C 0.72 0.72 0.72 0.72 V Reverse current at rated DC blocking voltage (per leg) IR Tj = 25 °C Tj = 100 °C Tj = 150 °C 1 10 50 1 10 50 1 10 50 1 10 50 mA 0.25 0.25 0.25 0.25 °C/W Parameter MBRTA80020(R) MBRTA80030(R) MBRTA80035(R) MBRTA80040(R) Unit Thermal characteristics Thermal resistance, junction - case (per leg) RΘJC www.genesicsemi.com/silicon-products/schottky-rectifiers/ 1 MBRTA80020 thru MBRTA80040R www.genesicsemi.com/silicon-products/schottky-rectifiers/ 2 MBRTA80020 thru MBRTA80040R Package dimensions and terminal configuration Product is marked with part number and terminal configuration. www.genesicsemi.com/silicon-products/schottky-rectifiers/ 3