CQ-2332

[CQ-2332]
CQ-2332
High-Speed Small Current Sensor
1. Genaral Description
CQ-2332 is an open-type current sensor using a Hall sensor which outputs the analog voltage proportional
to the AC/DC current. Quantum well ultra-thin film InAs (Indium Arsenide) is used as the Hall sensor,
which enables the high-accuracy and high-speed current sensing. Simple AI-Shell package with the Hall
sensor, magnetic core, and primary conductor realizes the space-saving and high reliability.
2. Feartures
- Bidirectional type
- Electrical isolation between the primary conductor and the sensor signal
- 5V single supply operation
- Ratiometric output
- Low variation and low temperature drift of sensitivity and offset voltage
- Low noise output: 1.2mVrms (typ.)
- Fast response time: 1μs (typ.)
- Small-sized package, halogen free
- Standards: IEC/UL 60950-1, UL 508, CSA C22.2 No. 14
IEC 62109 (certification pending)
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3. Table of Contents
1. Genaral Description ....................................................................................................................................... 1
2. Feartures ........................................................................................................................................................ 1
3. Table of Contents .......................................................................................................................................... 2
4. Block Diagram and Functions ....................................................................................................................... 3
5. Output Characteristics ................................................................................................................................... 4
6. Pin Configurations and Functions ................................................................................................................. 4
7. Safety Standards ............................................................................................................................................ 5
8. Absolute Maximum Ratings .......................................................................................................................... 5
9. Recommended Operating Conditions ............................................................................................................ 5
10. Electrical Characteristics ............................................................................................................................. 6
11. Characteristics Definitions .......................................................................................................................... 7
12. Recommended External Circuits ................................................................................................................. 9
13. Package .......................................................................................................................................................10
14. Reliability Tests ..........................................................................................................................................13
15. Precautions .................................................................................................................................................14
IMPORTANT NOTICE ...................................................................................................................................15
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4. Block Diagram and Functions
P
Magnetic
Core
Amplifier
Hall
Sensor
EEPROM Unit
DATA_IO
VOUT
VSS
Compensation
Bias Unit
N
Buffer
VDD
SCLK
Figure 1. Functional block diagram of CQ-2332
Circuit Block
Hall Sensor
Amplifier
Buffer
Compensation
Bias Unit
EEPROM Unit
Magnetic Core
Table 1. Explanation of circuit block
Function
Hall element which detects magnetic flux density generated from the measured current.
Amplifier of Hall element’s output.
Output buffer with gain. This block outputs the voltage (VOUT) proportional to the current
applied to the primary conductor.
Compensation circuit which adjusts the temperature drifts of sensitivity and offset
voltage.
Drive circuit for the Hall element.
Non-volatile memory for setting adjustment parameters. The parameters are set before the
shipment.
Magnetic core which gathers the magnetic flux density to the Hall element.
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5. Output Characteristics
VOUT
VDD
N
P
←
CQ-2332
(Top View)
←
IIN
1/2 VDD
VDD
VOUT
−INS
N→P
0
P→N
INS IIN
Figure 2. Output characteristics of CQ-2332
6. Pin Configurations and Functions
7
6
CQ-2332
(Top View)
1 2 3 4 5
Figure 3. Pin assignment of CQ-2332
No.
1
2
3
4
5
6
7
Table 2. Pin configuration and functions of CQ-2332
Pin Name
I/O
Description
DATA_IO
Test pin (connect to ground)
VDD
PWR Power supply pin (5V)
VSS
GND Ground pin (0V)
VOUT
O
Analog output pin
SCLK
Test pin (connect to ground)
P
I
Primary current pin (+)
N
I
Primary current pin (−)
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7. Safety Standards
・IEC/UL 60950-1 – Information Technology Equipment – Edition 2. (File No.E359197)
・UL 508 – Industrial Control Equipment – Edition 17. (File No. E353882)
・CAN/CSA C22.2 No. 14-10 – Industrial Control Equipment – Edition 12.(File No. E353882)
8. Absolute Maximum Ratings
Table 3. Absolute maximum ratings
Parameter
Symbol
Min.
Max.
Units
Notes
Supply Voltage
VDD
−0.3
6.5
V
VDD pin
Analog Output Current
IOUT
−1
1
mA VOUT pin
Storage Temperature
Tstg
−40
150
°C
WARNING: Operation at or beyond these limits may result in permanent damage to the device. Normal
operation is not guaranteed at these extremes.
9. Recommended Operating Conditions
Table 4. Recommended operating conditions
Parameter
Symbol
Min.
Typ.
Max.
Units
Notes
Supply Voltage
VDD
4.5
5.0
5.5
V
Analog Output Current
IOUT
−0.5
0.5
mA VOUT pin
Output Load Capacitance
CL
100
pF
VOUT pin
Operating Ambient
Ta
−40
110
°C
See Figure 4
Temperature
WARNING: Electrical characteristics are not guaranteed when operated at or beyond these conditions.
(95C)
(32 A)
Conditions ・Mounted on the test board complying with the EIA/JEDEC Standards (EIA/JESD51-xx.)
・VDD=5.5V
Figure 4. Primary current derating curve of CQ-2332
NOTE) Cooling or thermal radiation will improve the derating curve above.
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10. Electrical Characteristics
Table 5. Electrical characteristics
Conditions (unless otherwise specified): Ta = 25°C, VDD = 5V
Symbo
Parameter
Conditions
Min.
l
Maximum Primary
IRMSmax
−50
Current (RMS)
Current Consumption
IDD
No loads
Sensitivity (Note 1)
Vh
See Figure 5
99.0
Offset Voltage (Note 1)
Vof
IIN = 0A
2.480
Linear Sensing Range
INS
−21
Linearity Error (Note 1)
ρ
See Figure 5
−1
Rise Response Time
tr
CL = 100pF See Figure 8
Fall Response Time
tf
CL = 100pF See Figure 8
Bandwidth
fT
−3dB, CL = 100pF
Output Noise (Note 2)
VNrms 100Hz to 4MHz
Temperature Drift of
Ta = −40 to 110C
Vh-dmax
Sensitivity
See Figure 6
Temperature Drift of
Ta = −40 to 110C, IIN = 0A
Vof-dmax
Offset Voltage
See Figure 7
Ratiometric Error of
Vh-R
VDD = 4.5V to 5.5V
−1
Sensitivity (Note 2)
Ratiometric Error of
VDD = 4.5V to 5.5V
Vof-R
−0.7
Offset Voltage (Note 2)
IIN = 0A
Ta = −40 to 110C
Total Accuracy
ETO
(Note 3)
Ta = 25C
Primary Conductor
R1
Resistance
Isolation Voltage
VINS
AC 50/60Hz, 60sec
3
(Note 2)
Isolation Resistance
RINS
DC 1kV
500
(Note 2)
Clearance Distance
between the primary and the
dCL
13.3
(Note 2)
secondary
Creepage Distance
between the primary and the
dCP
13.3
(Note 2)
secondary
Typ.
Max.
Units
50
A
11
101.0
2.520
21
1
1
1
300
1.2
mA
mV/A
V
A
%F.S.
μs
μs
kHz
mVrms
±0.5
%
±23
mV
8.3
100.0
2.500
1
%
0.7
%F.S.
1.3
±0.5
%F.S.
100
μΩ
kV
MΩ
mm
mm
Note 1. These parameters can drift by the values in 14. Reliability Tests after the reflow and over the
lifetime of this product.
Note 2. These parameters are guaranteed by design.
Note 3. Total accuracy ETO is calculated by the equation below.
ETO = |100 × (Vh_meas − Vh) / Vh| + |100 ×(Vof_meas − Vof_meas_35) / (Vh × |INS| × 2)| + |ρmeas|
where Vh_meas[mV/A], Vof_meas[mV], ρmeas[%F.S.] represent the measured value of sensitivity, offset
voltage and linearity error respectively, Vh[mV/A] represent the typical value of sensitivity, and
Vof_meas_35[mV] represent the measured value of offset voltage at Ta = 35C. In the case of
CQ-2332, ETO is calculated by the equation as below.
ETO = |100 × (Vh_meas − 100) / 100| + |100 ×(Vof_meas − Vof_meas_35) / (100 × 21 × 2)| + |ρmeas|
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11. Characteristics Definitions
11.1. Sensitivity Vh [mV/mT], Offset Voltage Vof [V]
Sensitivity is defined as the slope of the approximate straight line calculated by the least square method,
using the data of VOUT voltage (VOUT) when the primary current (IIN) is swept within the range of linear
sensing range (INS). Offset voltage is defined as the intercept of the approximate straight line above.
11.2. Linearity Error ρ [%F.S.]
Linearity error is defined as the ratio of the maximum error voltage (Vd) to the full scale (F.S.), where Vd
is the maximum difference between the VOUT voltage (VOUT) and the approximate straight line calculated
in the sensitivity and offset voltage definition. Definition formula is shown in below:
ρ = Vd / F.S. × 100
Full scale (F.S.) is defined by the multiplication of sensitivity Vh and linear sensing range INS(max) −
INS(min) (Figure 5).
VOUT(V)
Approximate straight line
by least square method
Vd
−|INS|
0
F.S.
=2Vh×|INS|
|INS| IIN(A)
Figure 5. Output characteristics of CQ-2332
11.3. Ratiometric Error of Sensitivity Vh-R [%], Ratiometric Error of Offset Voltage Vof-R [%]
Output of CQ-2332 is ratiometric, which means the values of sensitivity (Vh) and offset voltage (Vof) are
proportional to the supply voltage (VDD). Ratiometric error is defined as the difference between the Vh (or
Vof) and ideal Vh (or Vof) when the VDD is changed from 5V to VDD1 (4.5V ≤ VDD1 ≤5.5V). Definition
formula is shown in below:
Vh-R = 100 × {(Vh(VDD = VDD1) / Vh(VDD = 5V)) − (VDD1 / 5)} / (VDD1 / 5)
Vof-R = 100 × {Vof(VDD = VDD1) − Vof(VDD = 5V) × (VDD1 / 5)) / F.S.
Full scale (F.S.) is defined by the multiplication of sensitivity Vh and linear sensing range INS(max) −
INS(min) in the condition of VDD = 5V (Figure 5).
11.4. Temperature Drift of Sensitivity Vh-d [%]
Temperature drift of sensitivity is defined as the drift ratio of the sensitivity (Vh) at Ta=Ta1 (−40C ≤ Ta1 ≤
110C) to the Vh at Ta=35C, and calculated from the formula below:
Vh-d = 100 × (Vh(Ta1) / Vh(35C) − 1)
Reference data of the temperature drift of sensitivity of CQ-2332 is shown in Figure 6.
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11.5. Temperature Drift of Offset Voltage Vof-d [mV]
Temperature drift of offset voltage is defined as the drift value between the offset voltage (Vof) at Ta=Ta1
(−40C ≤ Ta1 ≤ 110C) and the Vof at Ta=35C, and calculated from the formula below:
Vof-d = Vof(Ta = Ta1) − Vof(Ta = 35C)
Reference data of the temperature drift of offset voltage of CQ-2332 is shown in Figure 7.
10
100
VDD = 5V
IIN = ±21A
VDD = 5V
IIN = 0A
80
6
60
4
40
2
20
Vof-d [mV]
Vh-d [%]
8
0
-2
0
-20
-4
-40
-6
-60
-8
-80
-10
-100
-60 -40 -20
0
20
40
60
80 100 120
-60 -40 -20
0
20
40
60
80 100 120
Ta [C]
Ta [C]
Figure 6. Temperature drift of sensitivity
(for reference, n=3)
Figure 7. Temperature drift of offset voltage
(for reference, n=3)
11.6. Rise Response Time tr [µs], Fall Response Time tf [µs]
Rise response time (or fall response time) is defined as the time delay from the 90% (or 10%) of input
primary current (IIN) to the 90% (or 10%) of the VOUT voltage (VOUT) under the pulse input of primary
current (Figure 8).
IIN
IIN
90% IIN
10% IIN
Time
Time
VOUT
VOUT
90% VOUT
10% VOUT
tf
tr
Time
Time
Rise response time (tr)
Fall response time (tf)
Figure 8. Definition of response time
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12. Recommended External Circuits
+5V
+5V
6
P
SCLK
VOUT
IN
CQ-2332
VSS
VDD
DATA_IO
N
(b)
5
R1
4
3
2
(c)
RF
AIN
(a)
R2
CF
A/D
VSS
R2
0.1mF
VREF
R1
1
7
(a) 0.1mF bypass capacitor should be placed near by the CQ-2332.
(b) CQ-2332 has the ratiometric output. By making the supply voltage of CQ-2332 and the reference
voltage of A/D converter common, the A/D conversion error caused by the fluctuation of supply
voltage is decreased.
Voltage dividers (R1 and R2) are required if the reference voltage of A/D converter is less than +5V.
For example, if the reference voltage of A/D converter is +3.3V which is its supply voltage level,
R1=20kΩ, R2=39kΩ are recommended. If the reference voltage of A/D converter is different from its
supply voltage level, one more voltage divider is required.
(c) Add a low-pass filter if it is necessary.
Figure 9. Recommended external circuits of CQ-2332
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13. Package
13.1. Outline Dimensions
Unit: mm
The tolerances of dimensions without any mention are ±0.1mm.
Terminals: Cu
Plating for Terminals: Sn (100%)
RoHS compliant, halogen free
Figure 10. Package outline
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13.2. Pad Dimension
Unit: mm
Figure 11. Package outline
If 2 or more trace layers are used as the current paths, please make enough number of through-holes to flow
current between the trace layers.
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13.3. Marking
Production information is printed on the package surface by laser marking. Markings consist of 15 characters
(company logo ‘AKM’ and 6 characters × 2 lines).
AKM
Q 2 3 3 2＊
Y M D ＊＊＊
Product Code (CQ-2332) + Option
Option (3 characters)
Production Date (Y/M/D)
Figure 12. Markings of CQ-2332
Table 6. Production date code table
Last Number of Year
Month
Day
Character Number
Character
Month
Character
0
0
C
Jan.
1
1
1
D
Feb.
2
2
2
E
Mar.
3
3
3
F
Apr.
4
4
4
G
May.
5
5
5
H
Jun.
6
6
6
J
Jul.
7
7
7
K
Aug.
8
8
8
L
Sep.
9
9
9
M
Oct.
0
N
Nov.
A
P
Dec.
B
C
D
E
F
G
H
J
K
L
N
P
R
S
T
U
V
W
X
Y
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Day
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
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14. Reliability Tests
No.
Table 7. Test parameters and conditions of reliability tests
Test Parameter
Test Conditions
1
High Humidity Bias Test
2
High Temperature Bias Test
3
High Temperature Storage Test
4
Low Temperature Storage Test
5
Heat Cycle Test
6
Vibration Test
n
Test Time
[JEITA EIAJ ED-4701 102]
Ta = 85C, 85%RH, continuous operation
22
1000h
[JEITA EIAJ ED-4701 101]
Ta = 125C, continuous operation
22
1000h
[JEITA EIAJ ED-4701 201]
Ta = 150C
22
1000h
22
1000h
22
500 cycles
22
2hours to
each
direction
[JEITA EIAJ ED-4701 202]
Ta = −55C
[JEITA EIAJ ED-4701 105]
−65C ↔ 150C
30min. ↔ 30min.
Tested in vapor phase
[JEITA EIAJ ED-4701 403]
Vibration frequency: 10 to 55Hz (1min.)
Vibration amplitude: 1.5mm
(x, y, z directions)
Tested samples are pretreated as below before each reliability test:
Pretreating Conditions:
Desiccation: 125C/24h → Moisture Absorption: 85C/85%RH/168h →Reflow: 3 times (JEDEC MSL1)
Criteria:
Products whose drifts before and after the reliability tests do not exceed the values below are considered to
be in spec.
Sensitivity Vh (Ta = 25C)
: Within ±1.5%
Offset Voltage Vof (Ta = 25C)
: Within ±150mV
Linearity ρ (Ta = 25C)
: Within ±1%F.S.
EEPROM
: No change
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15. Precautions
[Storage Environment]
Products should be stored at an appropriate temperature and humidity (5 to 35°C, 40 to 85%RH).
Keep products away from chlorine and corrosive gas.
[Long-term Storage]
Long-term storage may result in poor lead solderability and degraded electrical performance even under
proper conditions. For those parts, which stored long -term shall be checked solderability before it is used.
For storage longer than 2 years, it is recommended to store in nitrogen atmosphere. Oxygen of atmosphere
oxidizes leads of products and lead solderability get worse.
[Other precautions]
1) This product should not be used under the environment with corrosive gas including chlorine or sulfur.
2) This product is lead (Pb) free. All leads are plated with 100% tin. Do not store this product alone in
high temperature and high humidity environment. Moreover, this product should be mounted on
substrate within six months after delivery.
3) This product is damaged when it is used on the following conditions:
- Supply voltage is applied in the opposite way.
- Overvoltage which is larger than the value indicated in the specification.
4) This product will be damaged if it is used for a long time with the current (effective current) which
exceeds the current rating. Careful attention must be paid so that maximum effective current is smaller
than current rating.
5) Since magnetic cores are fragile parts, do not use the fallen products.
6) The characteristic can change by the influences of nearby current and magnetic field. Please make sure
of the mounting position.
As this product contains gallium arsenide, observe the following procedures for safety.
1) Do not alter the form of this product into a gas, powder, liquid, through burning, crushing, or chemical
processing.
2) Observe laws and company regulations when discarding this product.
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IMPORTANT NOTICE
0. Asahi Kasei Microdevices Corporation (“AKM”) reserves the right to make changes to the
information contained in this document without notice. When you consider any use or application
of AKM product stipulated in this document (“Product”), please make inquiries the sales office of
AKM or authorized distributors as to current status of the Products.
1. All information included in this document are provided only to illustrate the operation and
application examples of AKM Products. AKM neither makes warranties or representations with
respect to the accuracy or completeness of the information contained in this document nor grants
any license to any intellectual property rights or any other rights of AKM or any third party with
respect to the information in this document. You are fully responsible for use of such information
contained in this document in your product design or applications. AKM ASSUMES NO
LIABILITY FOR ANY LOSSES INCURRED BY YOU OR THIRD PARTIES ARISING FROM
THE USE OF SUCH INFORMATION IN YOUR PRODUCT DESIGN OR APPLICATIONS.
2. The Product is neither intended nor warranted for use in equipment or systems that require
extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which
may cause loss of human life, bodily injury, serious property damage or serious public impact,
including but not limited to, equipment used in nuclear facilities, equipment used in the aerospace
industry, medical equipment, equipment used for automobiles, trains, ships and other
transportation, traffic signaling equipment, equipment used to control combustions or explosions,
safety devices, elevators and escalators, devices related to electric power, and equipment used in
finance-related fields. Do not use Product for the above use unless specifically agreed by AKM in
writing.
3. Though AKM works continually to improve the Product’s quality and reliability, you are
responsible for complying with safety standards and for providing adequate designs and safeguards
for your hardware, software and systems which minimize risk and avoid situations in which a
malfunction or failure of the Product could cause loss of human life, bodily injury or damage to
property, including data loss or corruption.
4. Do not use or otherwise make available the Product or related technology or any information
contained in this document for any military purposes, including without limitation, for the design,
development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or
missile technology products (mass destruction weapons). When exporting the Products or related
technology or any information contained in this document, you should comply with the applicable
export control laws and regulations and follow the procedures required by such laws and
regulations. The Products and related technology may not be used for or incorporated into any
products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or
foreign laws or regulations.
5. Please contact AKM sales representative for details as to environmental matters such as the RoHS
compatibility of the Product. Please use the Product in compliance with all applicable laws and
regulations that regulate the inclusion or use of controlled substances, including without limitation,
the EU RoHS Directive. AKM assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
6. Resale of the Product with provisions different from the statement and/or technical features set
forth in this document shall immediately void any warranty granted by AKM for the Product and
shall not create or extend in any manner whatsoever, any liability of AKM.
7. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior
written consent of AKM.
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