DIOTEC ELECTRONICS CORP. Data Sheet No. GPDG-101-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 1 AMP HIGH RELIABILITY SILICON DIODES MECHANICAL SPECIFICATION FEATURES SERIES GP100 - GP110 ACTUAL SIZE OF DO-41 PACKAGE PROPRIETARY JUNCTION PASSIVATION FOR SUPERIOR RELIABILITY AND PERFORMANCE DO - 41 VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION (Solder Voids: Typical < 2%, Max. < 10% of Die Area) LL BD (Dia) EXTREMELY LOW LEAKAGE AT HIGH TEMPERATURES LOW FORWARD VOLTAGE DROP BL Color Band Denotes Cathode o 1A at TA = 75 C WITH NO THERMAL RUNAWAY MECHANICAL DATA LL Case: JEDEC DO-41, molded epoxy (U/L Flammability Rating 94V-0) Terminals: Plated axial leads LD (Dia) Soldering: Per MIL-STD 202 Method 208 guaranteed NT LIA P OM SC Polarity: Color band denotes cathode 0.160 BL RoH Mounting Position: Any Minimum In mm Sym Weight: 0.012 Ounces (0.34 Grams) 4.1 Maximum In mm 5.2 0.205 BD 0.103 2.6 0.107 2.7 LL LD 1.00 0.028 25.4 0.71 0.034 0.86 MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive loads, derate current by 20%. PARAMETER (TEST CONDITIONS) RATINGS SYMBOL UNITS GP100 GP101 GP102 GP104 GP106 GP108 GP110 Series Number VRM Maximum DC Blocking Voltage Maximum RMS Voltage VRMS Maximum Peak Recurrent Reverse Voltage VRRM Average Forward Rectified Current @ TA = 75 C, Lead length = 0.375 in. (9.5 mm) Peak Forward Surge Current ( 8.3 mSec single half sine wave superimposed on rated load) o Maximum Forward Voltage at 1 Amp DC Maximum Full Cycle Reverse Current @ TL = 75 C (Note 1) o Maximum Average DC Reverse Current At Rated DC Blocking Voltage @ TA = 25 C o @ TA = 125 C Typical Thermal Resistance, Junction to Ambient (Note 1) Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range NOTES: (1) Lead length = 0.375 in. (9.5 mm) (2) Measured at 1MHz & applied reverse voltage of 4 volts o 100 200 35 70 50 100 50 600 800 140 280 420 560 700 200 400 600 800 1000 IO 1 IFSM 50 VFM 1 5 IRM 0.5 30.0 CJ TJ, TSTG VOLTS AMPS IRM(AV) RqJA 1000 400 30 VOLTS mA °C/W 10 pF -65 to +175 °C 4.97fgpdg101 H5 DIOTEC ELECTRONICS CORP. Data Sheet No. GPDG-101-2B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 1 AMP HIGH RELIABILITY SILICON DIODES RATING & CHARACTERISTIC CURVES FOR SERIES GP100 - GP110 50 1.0 Peak Forward Surge Current (Amperes) Average Forward Current, Io (Amperes) 1.2 0.8 0.6 0.4 0.2 0 0 50 100 150 40 30 20 JEDEC Method 8.3 mS Half Sine Wave 10 180 o 0 Ambient Temperature, C FIGURE 1. FORWARD CURRENT DERATING CURVE 10 1 100 Number of Cycles at 60 Hz FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT 10 Instantaneous Reverse Current, I (Microamperes) Instantaneous Forward Current (Amperes) 10 1.0 0.1 TJ = 25 C Pulse Width = 300 mS 1% Duty Cycle o TJ = 100 C o 1.0 .1 0.1 o .01 0.01 0.6 0.7 08 0.9 1.0 1.1 1.2 TJ = 25 C 0 1.3 20 60 40 80 100 120 140 Percent of Rated Peak Reverse Voltage Instantaneous Forward Voltage (Volts) FIGURE 4. TYPICAL REVERSE CHARACTERISTICS FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE 1000 o Capacitance, pF TJ = 25 C 10 0.1 0.1 1 10 100 Reverse Voltage, (Volts) FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE H6 Peak Forward Surge Current (Amperes) 100 100 TJ = 25 C Non-repetitive Square Pulse di/dt =200 mS o 10 0.01 0.1 1.0 10 Pulse Duration (Milliseconds) FIGURE 6. PEAK FORWARD SURGE CURRENT 4.97bgpdg101