1N5624, 1N5625, 1N5626, 1N5627 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Controlled avalanche characteristics • Low reverse current • High surge current loading 949588 MECHANICAL DATA Case: SOD-64 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Rectification diode, general purpose Polarity: color band denotes cathode end Mounting position: any Weight: approx. 858 mg ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY 1N5627-TR 1N5627-TAP 2500 per 10" tape and reel 2500 per ammopack 12 500 12 500 TYPE DIFFERENTIATION PACKAGE VR = 200 V; IF(AV) = 3 A VR = 400 V; IF(AV) = 3 A VR = 600 V; IF(AV) = 3 A VR = 800 V; IF(AV) = 3 A SOD-64 SOD-64 SOD-64 SOD-64 1N5627 1N5627 PARTS TABLE PART 1N5624 1N5625 1N5626 1N5627 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Reverse voltage = repetitive peak reverse voltage Peak forward surge current Repetitive peak forward current Average forward current Pulse avalanche peak power Pulse energy in avalanche mode, non repetitive (inductive load switch off) i2*t-rating Junction and storage temperature range TEST CONDITION PART SYMBOL VALUE UNIT See electrical characteristics 1N5624 1N5625 1N5626 1N5627 VR = VRRM VR = VRRM VR = VRRM VR = VRRM IFSM IFRM IF(AV) 200 400 600 800 100 18 3 V V V V A A A tp = 20 μs, half sine wave, Tj = 175 °C PR 1000 W I(BR)R = 1 A, Tj = 175 °C ER 20 mJ i2*t 40 - 55 to + 175 A2*s °C tp = 10 ms, half sinewave Tj = Tstg MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified) PARAMETER Junction ambient Rev. 1.6, 05-Sep-13 TEST CONDITION SYMBOL VALUE UNIT l = 10 mm, TL = constant RthJA 25 K/W On PC board with spacing 25 mm RthJA 70 K/W Document Number: 86063 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N5624, 1N5625, 1N5626, 1N5627 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Forward voltage Reverse current SYMBOL MIN. TYP. MAX. IF = 3 A PART VF - - 1 UNIT V VR = VRRM IR - 0.1 1 μA VR = VRRM, Tj = 100 °C IR - 5 10 μA Breakdown voltage IR = 100 μA, tp/T = 0.01, tp = 0.3 ms V(BR) - - 1600 V Diode capacitance VR = 4 V, f = 1 MHz CD - 40 60 pF Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A trr - 3.5 5 μs IF = 1 A, dI/dt = 5 A/μs, VR = 50 V trr - 4.5 7.5 μs IF = 1 A, dI/dt = 5 A/μs Qrr - 8 12 μC Reverse recovery charge TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 3.5 30 20 l l 10 2.5 2.0 1.5 1.0 0 5 10 15 20 25 0.0 30 I - Lead Length (mm) 94 9563 RthJA = 70 K/W PCB: d = 25 mm 0.5 TL = constant 0 VR = VRRM half sinewave RthJA = 25 K/W l = 10 mm 3.0 IFAV - Average Forward Current (A) RthJA - Therm. Resist. Junction/Ambient (K/W) 40 Fig. 1 - Max. Thermal Resistance vs. Lead Length 0 20 40 60 80 100 120 140 160 180 Tamb - Ambient Temperature (°C) 16393 Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 1000 100.000 – Forward Current ( A ) F I 1.000 T j =175°C 0.100 T j =25°C 0.010 I R – R everse Current ( A ) V R = V RRM 10.000 0.001 16392 100 10 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 V F – Forward Voltage ( V ) Fig. 2 - Forward Current vs. Forward Voltage Rev. 1.6, 05-Sep-13 25 16394 50 75 100 125 150 T j – Junction Temperature ( °C ) 175 Fig. 4 - Reverse Current vs. Junction Temperature Document Number: 86063 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N5624, 1N5625, 1N5626, 1N5627 www.vishay.com Vishay Semiconductors 100 V R = V RRM 200 PR –L imit @ 100%V R 150 PR –L imit @ 80%V R 100 f=1MHz 90 250 CD – Diode Capacitance ( pF ) PR – R everse Power Dissipation ( mW ) 300 50 80 70 60 50 40 30 20 10 0 0 25 16395 50 75 100 125 150 T j – Junction Temperature ( °C ) 175 0.1 1.0 10.0 V R – R everse Voltage ( V ) 16396 Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature 100.0 Fig. 6 - Diode Capacitance vs. Reverse Voltage PACKAGE DIMENSIONS in millimeters (inches): SOD-64 Sintered Glass Case SOD-64 Cathode Identification 4.3 (0.168) max. 1.35 (0.053) max. 26(1.014) min. 4 (0.156) max. 26 (1.014) min. Document-No.: 6.563-5006.4-4 Rev. 3 - Date: 09.February.2005 94 9587 Rev. 1.6, 05-Sep-13 Document Number: 86063 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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