Preliminary GS81313HD18/36GK-833/714/625 144Mb SigmaQuad-IIIe™ Burst of 4 ECCRAM™ 260-Pin BGA Commercial Temp Industrial Temp Up to 833 MHz 1.2V ~ 1.3V VDD 1.5V VDDQ Features Clocking and Addressing Schemes • • • • • • • • • • • • • • • • • The GS81313HD18/36GK SigmaQuad-IIIe ECCRAMs are synchronous devices. They employ three pairs of positive and negative input clocks; one pair of master clocks, CK and CK, and two pairs of write data clocks, KD[1:0] and KD[1:0]. All six input clocks are single-ended; that is, each is received by a dedicated input buffer. 4Mb x 36 and 8Mb x 18 organizations available 833 MHz maximum operating frequency 833 MT/s peak transaction rate (in millions per second) 120 Gb/s peak data bandwidth (in x36 devices) Separate I/O DDR Data Buses Non-multiplexed SDR Address Bus One operation - Read or Write - per clock cycle Burst of 4 Read and Write operations 3 cycle Read Latency On-chip ECC with virtually zero SER 1.2V ~ 1.3V core voltage 1.5V HSTL I/O interface Configurable ODT (on-die termination) ZQ pin for programmable driver impedance ZT pin for programmable ODT impedance IEEE 1149.1 JTAG-compliant Boundary Scan 260-pin, 14 mm x 22 mm, 1 mm ball pitch, 6/6 RoHS- compliant BGA package SigmaQuad-IIIe™ Family Overview SigmaQuad-IIIe ECCRAMs are the Separate I/O half of the SigmaQuad-IIIe/SigmaDDR-IIIe family of high performance ECCRAMs. Although very similar to GSI's second generation of networking SRAMs (the SigmaQuad-II/SigmaDDR-II family), these third generation devices offer several new features that help enable significantly higher performance. CK and CK are used to latch address and control inputs, and to control all output timing. KD[1:0] and KD[1:0] are used solely to latch data inputs. Each internal read and write operation in a SigmaQuad-IIIe B4 ECCRAM is four times wider than the device I/O bus. An input data bus de-multiplexer is used to accumulate incoming data before it is simultaneously written to the memory array. An output data multiplexer is used to capture the data produced from a single memory array read and then route it to the appropriate output drivers as needed. Therefore, the address field of a SigmaQuad-IIIe B4 ECCRAM is always two address pins less than the advertised index depth (e.g. the 8M x 18 has 2M addressable index). On-Chip Error Correction Code GSI's ECCRAMs implement an ECC algorithm that detects and corrects all single-bit memory errors, including those induced by SER events such as cosmic rays, alpha particles, etc. The resulting Soft Error Rate of these devices is anticipated to be <0.002 FITs/Mb — a 5-order-of-magnitude improvement over comparable SRAMs with no on-chip ECC, which typically have an SER of 200 FITs/Mb or more. All quoted SER values are at sea level in New York City. Parameter Synopsis Speed Grade Max Operating Frequency Read Latency VDD -833 833 MHz 3 cycles 1.2V to 1.35V -714 714 MHz 3 cycles 1.2V to 1.35V -625 625 MHz 3 cycles 1.15V to 1.35V Rev: 1.09 8/2015 1/26 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2014, GSI Technology Preliminary GS81313HD18/36GK-833/714/625 8M x 18 Pinout (Top View) 5 6 7 8 1 2 3 4 9 10 11 12 13 A VDD VDDQ VDD VDDQ NC (RSVD) MCH (CFG) MCL ZQ PZT1 VDDQ VDD VDDQ VDD B VSS NUO VSS NUI MCH MCH (B4M) NC (RSVD) MCH (SIOM) PZT0 D0 VSS Q0 VSS C Q17 VDDQ D17 VDDQ VSS SA VDD SA VSS VDDQ NUI VDDQ NUO D VSS NUO VSS NUI SA VDDQ NC (288 Mb) VDDQ SA D1 VSS Q1 VSS E Q16 VDDQ D16 VDD VSS SA VSS SA VSS VDD NUI VDDQ NUO F VSS NUO VSS NUI SA VDD VDDQ VDD SA D2 VSS Q2 VSS G Q15 NUO D15 NUI VSS SA MZT1 SA VSS D3 NUI Q3 NUO H Q14 VDDQ D14 VDDQ SA VDDQ W VDDQ SA VDDQ NUI VDDQ NUO J VSS NUO VSS NUI VSS SA VSS SA VSS D4 VSS Q4 VSS K CQ1 VDDQ VREF VDD KD1 VDD CK VDD KD0 VDD VREF VDDQ CQ0 L CQ1 VSS QVLD1 Vss KD1 VDDQ CK VDDQ KD0 VSS QVLD0 VSS CQ0 M VSS Q13 VSS D13 VSS SA VSS SA VSS NUI VSS NUO VSS N NUO VDDQ NUI VDDQ PLL VDDQ R VDDQ MCH VDDQ D5 VDDQ Q5 P NUO Q12 NUI D12 VSS SA MZT0 SA VSS NUI D6 NUO Q6 R VSS Q11 VSS D11 MCH VDD VDDQ VDD RST NUI VSS NUO VSS T NUO VDDQ NUI VDD VSS SA VSS SA VSS VDD D7 VDDQ Q7 U VSS Q10 VSS D10 NC (576 Mb) VDDQ NC (RSVD) VDDQ NC (1152 Mb) NUI VSS NUO VSS V NUO VDDQ NUI VDDQ VSS SA (x18) VDD NUI (B2) VSS VDDQ D8 VDDQ Q8 W VSS Q9 VSS D9 TCK MCL RCS MCL TMS NUI VSS NUO VSS Y VDD VDDQ VDD VDDQ TDO ZT NC (RSVD) MCL TDI VDDQ VDD VDDQ VDD Notes: 1. Pins 6W, 7A, 8W, and 8Y must be tied Low in this device. 2. Pins 5B, 5R and 9N must be tied High in this device. 3. Pin 6A is defined as mode pin CFG in the pinout standard. It must be tied High in this device to select x18 configuration. 4. Pin 8B is defined as mode pin SIOM in the pinout standard. It must be tied High in this device to select Separate I/O configuration. 5. Pin 6B is defined as mode pin B4M in the pinout standard. It must be tied High in this device to select Burst-of-4 configuration. 6. Pin 6V is defined as address pin SA for x18 devices. It is used in this device. 7. Pin 8V is defined as address pin SA for B2 devices. It is unused in this device, and must be left unconnected or driven Low. 8. Pin 7D is reserved as address pin SA for 288 Mb devices. It is a true no connect in this device. 9. Pin 5U is reserved as address pin SA for 576 Mb devices. It is a true no connect in this device. 10. Pin 9U is reserved as address pin SA for 1152 Mb devices. It is a true no connect in this device. Rev: 1.09 8/2015 2/26 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2014, GSI Technology Preliminary GS81313HD18/36GK-833/714/625 4M x 36 Pinout (Top View) 5 6 7 8 1 2 3 4 9 10 11 12 13 A VDD VDDQ VDD VDDQ NC (RSVD) MCL (CFG) MCL ZQ PZT1 VDDQ VDD VDDQ VDD B VSS Q35 VSS D35 MCH MCH (B4M) NC (RSVD) MCH (SIOM) PZT0 D0 VSS Q0 VSS C Q26 VDDQ D26 VDDQ VSS SA VDD SA VSS VDDQ D9 VDDQ Q9 D VSS Q34 VSS D34 SA VDDQ NC (288 Mb) VDDQ SA D1 VSS Q1 VSS E Q25 VDDQ D25 VDD VSS SA VSS SA VSS VDD D10 VDDQ Q10 F VSS Q33 VSS D33 SA VDD VDDQ VDD SA D2 VSS Q2 VSS G Q24 Q32 D24 D32 VSS SA MZT1 SA VSS D3 D11 Q3 Q11 H Q23 VDDQ D23 VDDQ SA VDDQ W VDDQ SA VDDQ D12 VDDQ Q12 J VSS Q31 VSS D31 VSS SA VSS SA VSS D4 VSS Q4 VSS K CQ1 VDDQ VREF VDD KD1 VDD CK VDD KD0 VDD VREF VDDQ CQ0 L CQ1 VSS QVLD1 VSS KD1 VDDQ CK VDDQ KD0 VSS QVLD0 VSS CQ0 M VSS Q22 VSS D22 VSS SA VSS SA VSS D13 VSS Q13 VSS N Q30 VDDQ D30 VDDQ PLL VDDQ R VDDQ MCH VDDQ D5 VDDQ Q5 P Q29 Q21 D29 D21 VSS SA MZT0 SA VSS D14 D6 Q14 Q6 R VSS Q20 VSS D20 MCH VDD VDDQ VDD RST D15 VSS Q15 VSS T Q28 VDDQ D28 VDD VSS SA VSS SA VSS VDD D7 VDDQ Q7 U VSS Q19 VSS D19 NC (576 Mb) VDDQ NC (RSVD) VDDQ NC (1152 Mb) D16 VSS Q16 VSS V Q27 VDDQ D27 VDDQ VSS NUI (x18) VDD NUI (B2) VSS VDDQ D8 VDDQ Q8 W VSS Q18 VSS D18 TCK MCL RCS MCL TMS D17 VSS Q17 VSS Y VDD VDDQ VDD VDDQ TDO ZT NC (RSVD) MCL TDI VDDQ VDD VDDQ VDD Notes: 1. Pins 6W, 7A, 8W, and 8Y must be tied Low in this device. 2. Pins 5B, 5R and 9N must be tied High in this device. 3. Pin 6A is defined as mode pin CFG in the pinout standard. It must be tied Low in this device to select x36 configuration. 4. Pin 8B is defined as mode pin SIOM in the pinout standard. It must be tied High in this device to select Separate I/O configuration. 5. Pin 6B is defined as mode pin B4M in the pinout standard. It must be tied High in this device to select Burst-of-4 configuration. 6. Pin 6V is defined as address pin SA for x18 devices. It is unused in this device, and must be left unconnected or driven Low. 7. Pin 8V is defined as address pin SA for B2 devices. It is unused in this device, and must be left unconnected or driven Low. 8. Pin 7D is reserved as address pin SA for 288 Mb devices. It is a true no connect in this device. 9. Pin 5U is reserved as address pin SA for 576 Mb devices. It is a true no connect in this device. 10. Pin 9U is reserved as address pin SA for 1152 Mb devices. It is a true no connect in this device. Rev: 1.09 8/2015 3/26 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2014, GSI Technology Preliminary GS81313HD18/36GK-833/714/625 Pin Description Symbol Description Type Address — Read or Write Address is registered on CK. Input D[35:0] Write Data — Registered on KD and KD during Write operations. D[17:0] - x18 and x36. D[35:18] - x36 only. Input Q[35:0] Read Data — Aligned with CQ and CQ during Read operations. Q[17:0] - x18 and x36. Q[35:18] - x36 only. Output Read Data Valid — Driven high one half cycle before valid Read Data. Output SA QVLD[1:0] CK, CK Primary Input Clocks — Dual single-ended. Used for latching address and control inputs, for internal timing control, and for output timing control. Input KD[1:0], KD[1:0] Write Data Input Clocks — Dual single-ended. Used for latching write data inputs. KD0, KD0: latch Write Data (D[17:0] in x36, D[8:0] in x18). KD1, KD1: latch Write Data (D[35:18] in x36, D[17:9] in x18). Input CQ[1:0], CQ[1:0] Read Data Output Clocks — Free-running output (echo) clocks, tightly aligned with read data outputs. Facilitate source-synchronous operation. Output R Read Enable — Registered on CK. R = 0 initiates a Read operation. Input W Write Enable — Registered on CK. W = 0 initiates a Write operation. Input PLL PLL Enable — Weakly pulled High internally. PLL = 0: disables internal PLL. PLL = 1: enables internal PLL. Input RST Reset — Holds the device inactive and resets the device to its initial power-on state when asserted High. Weakly pulled Low internally. Input ZQ Driver Impedance Control Resistor Input — Must be connected to VSS through an external resistor RQ to program driver impedance. Input ZT ODT Impedance Control Resistor Input — Must be connected to VSS through an external resistor RT to program ODT impedance. Input RCS Current Source Resistor Input — Preferably, should be connected to VSS through an external 2K resistor to provide an accurate current source for the PLL. Alternately, it may be left unconnected, in which case a less accurate current source for the PLL is derived internally. The less accurate current source results in a narrower operating range for a given speed grade device, vs. connecting the RCS resistor. Input ODT Mode Select — Set the ODT state globally for all input groups. Must be tied High or Low. MZT[1:0] = 00: disables ODT on all input groups, regardless of PZT[1:0]. MZT[1:0] = 01: enables strong ODT on select input groups, as specified by PZT[1:0]. MZT[1:0] = 10: enables weak ODT on select input groups, as specified by PZT[1:0]. MZT[1:0] = 11: reserved. Input MZT[1:0] Rev: 1.09 8/2015 4/26 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2014, GSI Technology Preliminary GS81313HD18/36GK-833/714/625 Symbol Description Type PZT[1:0] ODT Configuration Select — Set the ODT state for various combinations of input groups when MZT[1:0] = 01 or 10. Must be tied High or Low. PZT[1:0] = 00: enables ODT on write data only. PZT[1:0] = 01: enables ODT on write data and input clocks. PZT[1:0] = 10: enables ODT on write data, address, and control. PZT[1:0] = 11: enables ODT on write data, input clocks, address, and control. Input VDD Core Power Supply — VDDQ I/O Power Supply — VREF Input Reference Voltage — Input buffer reference voltage. — VSS Ground — TCK JTAG Clock — Weakly pulled Low internally. Input TMS JTAG Mode Select — Weakly pulled High internally. Input TDI JTAG Data Input — Weakly pulled High internally. Input TDO JTAG Data Output MCH Must Connect High — May be tied to VDDQ directly or via a 1k resistor. Input MCL Must Connect Low — May be tied to VSS directly or via a 1k resistor. Input NC No Connect — There is no internal chip connection to these pins. They may be left unconnected, or tied/ driven High or Low. NUI Not Used Input — There is an internal chip connection to these input pins, but they are unused by the device. They are pulled Low internally. They may be left unconnected or tied/driven Low. They should not be tied/driven High. Input NUO Not Used Output — There is an internal chip connection to these output pins, but they are unused by the device. The drivers are tri-stated internally. They should be left unconnected. Output Rev: 1.09 8/2015 Output 5/26 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. — © 2014, GSI Technology Preliminary GS81313HD18/36GK-833/714/625 Power-Up and Reset Requirements For reliability purposes, power supplies must power up simultaneously, or in the following sequence: VSS, VDD, VDDQ, VREF and inputs. Power supplies must power down simultaneously, or in the reverse sequence. After power supplies power up, the following start-up sequence must be followed. Step 1 (Recommended, but not required): Assert RST High for at least 1ms. While RST is asserted high: • The PLL is disabled. • The states of R, and W control inputs are ignored. Note: If possible, RST should be asserted High before input clocks begin toggling, and remain asserted High until input clocks are stable and toggling within specification, in order to prevent unstable, out-of-spec input clocks from causing trouble in the SRAM. Step 2: Begin toggling input clocks. After input clocks begin toggling, but not necessarily within specification: • Q are placed in the non-Read state, and remain so until the first Read operation. • QVLD are driven Low, and remain so until the first Read operation. • CQ, CQ begin toggling, but not necessarily within specification. Step 3: Wait until input clocks are stable and toggling within specification. Step 4: De-assert RST Low (if asserted High). Step 5: Wait at least 224K (229,376) cycles. During this time: • Driver and ODT impedances are calibrated. Can take up to 160K cycles. • The current source for the PLL is calibrated (based on RCS pin). Can take up to 64K cycles. Note: The PLL pin may be asserted High or de-asserted Low during this time. If asserted High, PLL synchronization begins immediately after the current source for the PLL is calibrated. If de-asserted Low, PLL synchronization begins after the PLL pin is asserted High (see Step 6). In either case, Step 7 must follow thereafter. Step 6: Assert PLL pin High (if de-asserted Low). Step 7: Wait at least 64K (65,536) cycles for the PLL to lock. After the PLL has locked: • CQ, CQ begin toggling within specification. Step 8: Begin initiating Read and Write operations. Reset Usage Although not generally recommended, RST may be asserted High at any time after completion of the initial power-up sequence described above, to reset the SRAM control logic to its initial power-on state. However, whenever RST is subsequently de-asserted Low (as in Step 4 above), Steps 5~7 above must be followed before Read and Write operations are initiated. Note: Memory array content may be perturbed/corrupted when RST is asserted High. Rev: 1.09 8/2015 6/26 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2014, GSI Technology Preliminary GS81313HD18/36GK-833/714/625 PLL Operation A PLL is implemented in these devices to control all output timing. It uses the CK input clock as a source, and is enabled when all of the following conditions are met: 1. RST is de-asserted Low, and 2. The PLL pin is asserted High, and 3. CK cycle time tKHKH (max), as specified in the AC Timing Specifications section. Once enabled, the PLL requires 64K stable clock cycles in order to lock/synchronize properly. When the PLL is enabled, it aligns output clocks and read data to input clocks (with some fixed delay), and it generates all mid-cycle output timing. See the Output Timing section for more information. The PLL can tolerate changes in input clock frequency due to clock jitter (i.e. such jitter will not cause the PLL to lose lock/ synchronization), provided the cycle-to-cycle jitter does not exceed 200ps (see “tKJITcc” in the AC Timing Specifications section for more information). However, the PLL must be resynchronized (i.e. disabled and then re-enabled) whenever the nominal input clock frequency is changed. The PLL is disabled when any of the following conditions are met: 1. RST is asserted High, or 2. The PLL pin is de-asserted Low, or 3. CK is stopped for at least 30ns, or CK cycle time 30ns. On-Chip Error Correction These devices implement a single-error correct, single-error detect (SEC-SED) ECC algorithm (specifically, a Hamming Code) on each 18-bit data word transmitted in DDR fashion on each 9-bit data bus (i.e., transmitted on D/Q[8:0], D/Q[17:9], D/Q[26:18], and D/Q[35:27]). To accomplish this, 5 ECC parity bits (invisible to the user) are utilized per every 18 data bits (visible to the user). As such, these devices actually comprise 184Mb of memory, of which 144Mb are visible to the user. The ECC algorithm cannot detect multi-bit errors. However, these devices are architected in such a way that a single SER event very rarely causes a multi-bit error across any given “transmitted data unit”, where a “transmitted data unit” represents the data transmitted as the result of a single read or write operation to a particular address. The extreme rarity of multi-bit errors results in the SER mentioned previously (i.e., <0.002 FITs/Mb, measured at sea level). Not only does the on-chip ECC significantly improve SER performance, but it can also free up the entire memory array for data storage. Very often SRAM applications allocate 1/9th of the memory array (i.e., one “error bit” per eight “data bits”, in any 9-bit “data byte”) for error detection (either simple parity error detection, or system-level ECC error detection and correction). Depending on the application, such error-bit allocation may be unnecessary in these devices, in which case the entire memory array can be utilized for data storage, effectively providing 12.5% greater storage capacity compared to SRAMs of the same density not equipped with on-chip ECC. Rev: 1.09 8/2015 7/26 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2014, GSI Technology Preliminary GS81313HD18/36GK-833/714/625 Clock Truth Table Previous Operation SA R W Current Operation (tn–1) CK (tn) CK (tn) CK (tn) (tn) KD (tn-1) KD (tn-½) KD (tn) KD (tn+½) NOP X 1 1 NOP X X — — 0 — Write X 1 X NOP D3 D4 — — 0 — Read X X 1 NOP X X — — NOP V 1 0 Write D1 D2 D3 D4 Read V X 0 Write D1 D2 D3 D4 Q3 Q4 NOP V 0 X Read X X — — Q1 Q2 Q3 Q4 Write V 0 X Read D3 D4 — — Q1 Q2 Q3 Q4 D Q CQ (tn+3) CQ (tn+3½) Q3 CQ (tn+4) Q4 CQ (tn+4½) — 0 — — Notes: 1. 1 = High; 0 = Low; V = Valid; X = don’t care. 2. D1, D2, D3, and D4 indicate the first, second, third, and fourth pieces of Write Data transferred during Write operations. 3. Q1, Q2, Q3, and Q4 indicate the first, second, third, and fourth pieces of Read Data transferred during Read operations. 4. Q pins are driven Low for one cycle in response to NOP and Write commands, 3 cycles after the command is sampled, except when preceded by a Read command. Rev: 1.09 8/2015 8/26 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2014, GSI Technology Preliminary GS81313HD18/36GK-833/714/625 Input Timing These devices utilize three pairs of positive and negative input clocks, CK & CK and KD[1:0] & KD[1:0], to latch the various synchronous inputs. Specifically: CK latches all address (SA) inputs. CK latches all control (R, W) inputs. KD[1:0] and KD[1:0] latch particular write data (D) inputs, as follows: • KD0 and KD0 latch D[17:0] in x36, and D[8:0] in x18. • KD1 and KD1 latch D[35:18] in x36, and D[17:9] in x18. Output Timing These devices provide two pairs of positive and negative output clocks (aka “echo clocks”), CQ[1:0] & CQ[1:0], whose timing is tightly aligned with read data in order to enable reliable source-synchronous data transmission. These devices utilize a PLL to control output timing. When the PLL is enabled, it generates 0 and 180 phase clocks from CK that control read data output clock (CQ, CQ), read data (Q), and read data valid (QVLD) output timing, as follows: • CK+0 generates CQ[1:0], CQ[1:0], Q1 active, and Q2 inactive. • .CK+180 generates CQ[1:0], CQ[1:0], Q1 inactive, Q2 active, and QVLD active/inactive. Note: Q1 and Q2 indicate the first and second pieces of read data transferred in any given clock cycle during Read operations. When the PLL is enabled, CQ is aligned to an internally-delayed version of CK. See the AC Timing Specifications for more information. CQ[1:0] and CQ[1:0] align with particular Q and QVLD outputs, as follows: • CQ0 and CQ0 align with Q[17:0], QVLD0 in x36 devices, and Q[8:0], QVLD0 in x18 devices. • CQ1 and CQ1 align with Q[35:18], QVLD1 in x36 devices, and Q[17:9], QVLD0 in x18 devices. Rev: 1.09 8/2015 9/26 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2014, GSI Technology Preliminary GS81313HD18/36GK-833/714/625 Driver Impedance Control Programmable Driver Impedance is implemented on the following output signals: • CQ, CQ, Q, QVLD. Driver impedance is programmed by connecting an external resistor RQ between the ZQ pin and VSS. Driver impedance is set to the programmed value within 160K cycles after input clocks are operating within specification and RST is de-asserted Low. It is updated periodically thereafter to compensate for temperature and voltage fluctuations in the system. Output Signal Pull-Down Impedance (ROUTL) Pull-Up Impedance (ROUTH) CQ, CQ, Q, QVLD RQ*0.2 15% RQ*0.2 15% Notes: 1. ROUTL and ROUTH apply when 175 RQ 225. 2. The mismatch between ROUTL and ROUTH is less than 10%, guaranteed by design. ODT Impedance Control Programmable ODT Impedance is implemented on the following input signals: • CK, CK, KD, KD, SA, R, W, D. ODT impedance is programmed by connecting an external resistor RT between the ZT pin and VSS. ODT impedance is set to the programmed value within 160K cycles after input clocks are operating within specification and RST is de-asserted Low. It is updated periodically thereafter to compensate for temperature and voltage fluctuations in the system Input Signal CK, CK, KD, KD PZT[1:0] MZT[1:0] Pull-Down Impedance (RINL) Pull-Up Impedance (RINH) X0 XX disabled disabled 01 RT 15% RT 15% 10 RT*2 20% RT*2 20% XX disabled disabled 01 RT 15% RT 15% 10 RT*2 20% RT*2 20% 01 RT 15% RT 15% 10 RT*2 20% RT*2 20% X1 0X SA, R, W D 1X XX Notes: 1. When MZT[1:0] = 00, ODT is disabled on all inputs. MZT[1:0] = 11 is reserved for future use. 2. RINL and RINH apply when 105 RT 135 3. The mismatch between RINL and RINH is less than 10%, guaranteed by design. 4. All ODT is disabled during JTAG EXTEST and SAMPLE-Z instructions. Note: When ODT impedance is enabled on a particular input, that input should always be driven High or Low; it should never be tri-stated (i.e., in a High- Z state). If the input is tri-stated, the ODT will pull the signal to VDDQ / 2 (i.e., to the switch point of the diff-amp receiver), which could cause the receiver to enter a meta-stable state and consume more power than it normally would. This could result in the device’s operating currents being higher. Rev: 1.09 8/2015 10/26 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2014, GSI Technology Preliminary GS81313HD18/36GK-833/714/625 Absolute Maximum Ratings Parameter Symbol Rating Units Core Supply Voltage VDD -0.3 to +1.4 V I/O Supply Voltage VDDQ -0.3 to +1.8 V VIN1 -0.3 to VDDQ + 0.3 VIN2 VDDQ - 1.5 to +1.7 Input Voltage (LS) VIN3 Junction Temperature Storage Temperature Input Voltage (HS) Notes V 2 -0.3 to VDDQ + 0.3 V 3 TJ 0 to 125 C TSTG -55 to 125 C Notes: 1. Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended Operating Conditions. Exposure to conditions exceeding the Recommended Operating Conditions for an extended period of time may affect reliability of this component. 2. Parameters apply to High Speed Inputs: CK, CK, KD, KD, SA, D, R, W. VIN1 and VIN2 must both be met. 3. Parameters apply to Low Speed Inputs: RST, PLL, MZT, PZT. Recommended Operating Conditions Parameter Symbol Min Typ Max Units Core Supply Voltage (-833, -714 speed grades) VDD 1.2 1.25 1.35 V Core Supply Voltage (-625 speed grade) VDD 1.15 1.2 1.35 V I/O Supply Voltage VDDQ 1.45 1.5 1.55 V Commercial Junction Temperature TJC 0 — 85 C Industrial Junction Temperature TJI -40 — 100 C Notes Note: For reliability purposes, power supplies must power up simultaneously, or in the following sequence: VSS, VDD, VDDQ, VREF, and Inputs. Power supplies must power down simultaneously, or in the reverse sequence. Thermal Impedances Package JA (C°/W) Airflow = 0 m/s JA (C°/W) Airflow = 1 m/s JA (C°/W) Airflow = 2 m/s JB (C°/W) JC (C°/W) FBGA 13.67 10.28 9.31 3.08 0.13 Rev: 1.09 8/2015 11/26 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2014, GSI Technology Preliminary GS81313HD18/36GK-833/714/625 I/O Capacitance Parameter Symbol Min Max Units Notes Input Capacitance CIN — 5.0 pF 1, 3 Output Capacitance COUT — 5.5 pF 2, 3 Notes: 1. VIN = VDDQ/2. 2. VOUT = VDDQ/2. 3. TA = 25C, f = 1 MHz. Input Electrical Characteristics Parameter Symbol Min Typ Max Units Notes DC Input Reference Voltage VREFdc 0.48 * VDDQ 0.50 * VDDQ 0.52 * VDDQ V — VREF + 0.1 0.80 * VDDQ V 1, 6, 7 DC Input High Voltage (HS) VIH1dc VIH2dc VIL1dc -0.15 VIL2dc VDDQ - 1.4 DC Input High Voltage (LS) VIH2dc DC Input Low Voltage (LS) AC Input Reference Voltage DC Input Low Voltage (HS) AC Input High Voltage (HS) 1.6 0.20 * VDDQ VREF - 0.1 V 2, 6, 8 0.75 * VDDQ VDDQ VDDQ + 0.15 V 9 VIL2dc -0.15 0 0.25 * VDDQ V 9 VREFac 0.47 * VDDQ 0.50 * VDDQ 0.53 * VDDQ V 3 VREF + 0.2 0.80 * VDDQ V 1, 4~6, 7 VIH1ac VIH2ac VIL1ac -0.25 VIL2ac VDDQ - 1.45 AC Input High Voltage (LS) VIH2ac AC Input Low Voltage (LS) VIL2ac AC Input Low Voltage (HS) VDDQ + 0.15 VDDQ + 0.25 1.65 0.20 * VDDQ VREF - 0.2 V 2, 4~6, 8 VDDQ - 0.2 VDDQ VDDQ + 0.25 V 4, 9 -0.25 0 0.2 V 4, 9 Notes: 1. “Typ” parameter applies when Controller ROUTH = 40 and SRAM RINH = RINL = 120. 2. “Typ” parameter applies when Controller ROUTL = 40 and SRAM RINH = RINL = 120. 3. VREFac is equal to VREFdc plus noise. 4. VIH max and VIL min apply for pulse widths less than one-quarter of the cycle time. 5. Input rise and fall times must be a minimum of 1V/ns, and within 10% of each other. 6. Parameters apply to High Speed Inputs: CK, CK, KD, KD, SA, D, R, W. 7. VIH1 max and VIH2 max (DC & AC) must both be met. 8. VIL1 min and VIL2 min (DC & AC) must both be met. Note that when VDDQ = 1.5V nominal, these specs can only be met with input termination enabled. This, in fact, a requirement for using 1.5V I/O in these devices. 9. Parameters apply to Low Speed Inputs: RST, PLL, MZT, PZT. Rev: 1.09 8/2015 12/26 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2014, GSI Technology Preliminary GS81313HD18/36GK-833/714/625 Output Electrical Characteristics Parameter Symbol Min Typ Max Units Notes DC Output High Voltage VOHdc — 0.80 * VDDQ VDDQ + 0.15 V 1, 3 DC Output Low Voltage VOLdc -0.15 0.20 * VDDQ — V 2, 3 AC Output High Voltage VOHac — 0.80 * VDDQ VDDQ + 0.25 V 1, 3 AC Output Low Voltage VOLac -0.25 0.20 * VDDQ — V 2, 3 Note: 1. “Typ” parameter applies when SRAM ROUTH = 40 and Controller RINH = RINL = 120. 2. “Typ” parameter applies when SRAM ROUTL = 40 and Controller RINH = RINL = 120. 3. Parameters apply to: CQ, CQ, Q, QVLD. Leakage Currents Parameter Input Leakage Current Output Leakage Current Symbol Min Max Units Notes ILI1 -2 2 uA 1, 2 ILI2 -20 2 uA 1, 3 ILI3 -2 20 uA 1, 4 ILO -2 2 uA 5, 6 Notes: 1. VIN = VSS to VDDQ. 2. Parameters apply to CK, CK, KD, KD, SA, D, R, W when ODT is disabled. Parameters apply to MZT, PZT. 3. Parameters apply to PLL, TMS, TDI (weakly pulled up). 4. Parameters apply to RST, TCK (weakly pulled down). 5. VOUT = VSS to VDDQ. 6. Parameters apply to CQ, CQ, Q, QVLD, TDO. Rev: 1.09 8/2015 13/26 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2014, GSI Technology Preliminary GS81313HD18/36GK-833/714/625 Operating Currents Parameter Symbol x18 Operating Current IDD x36 Operating Current IDD VDD (nom) 833 MHz 714 MHz 625 MHz Units 1.25V TBD TBD TBD mA 1.2V — — TBD mA 1.25V TBD TBD TBD mA 1.2V — — TBD mA Notes: 1. IOUT = 0 mA; VIN = VIH or VIL. 2. Applies at 100% alternating Reads and Writes. AC Test Conditions Parameter Symbol Conditions Units Core Supply Voltage (-833, -714 speed grades) VDD 1.2 to 1.35 V Core Supply Voltage (-625 speed grade) VDD 1.15 to 1.35 V I/O Supply Voltage VDDQ 1.45 to 1.55 V Input Reference Voltage VREF 0.75 V Input High Level VIH 1.25 V Input Low Level VIL 0.25 V Input Rise and Fall Time — 2.0 V/ns Input and Output Reference Level — 0.75 V Note: Output Load Conditions RQ = 200. Refer to figure below. AC Test Output Load 50 Output 50 VDDQ/2 5 pF Rev: 1.09 8/2015 14/26 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2014, GSI Technology Preliminary GS81313HD18/36GK-833/714/625 AC Timing Specifications (independent of device speed grade) Parameter Symbol Min Max Units Notes Input Clock Timing Clk High Pulse Width tKHKL 0.45 — cycles 1 Clk Low Pulse Width tKLKH 0.45 — cycles 1 Clk High to Clk High tKHKH 0.45 0.55 cycles 2 Clk High to Write Data Clk High tKHKDH -250 +250 ps 3 Clk Cycle-to-Cycle Jitter tKJITcc — 60 ps 1,4,5 PLL Lock Time tKlock 65,536 — cycles 6 Clk Static to PLL Reset tKreset 30 — ns 7,12 Output Timing Clk High to Output Valid / Hold tKHQV/X +0.4 +1.2 ns 8 Clk High to Echo Clock High tKHCQH +0.4 +1.2 ns 9 Echo Clk High to Output Valid / Hold tCQHQV/X -120 +120 ps 10,12 Echo Clk High to Echo Clock High tCQHCQH 0.5*tKHKH (nom) - 50 0.5*tKHKH (nom) + 50 ps 11,12 Notes: All parameters are measured from the mid-point of the object signal to the mid-point of the reference signal. 1. Parameters apply to CK, CK, KD, KD. 2. Parameter specifiesCK CK and KD KD requirements. 3. Parameter specifies CK KD and CK KD requirements. 4. Parameter specifies Cycle-to-Cycle (C2C) Jitter (i.e. the maximum variation from clock rising edge to the next clock rising edge). As such, it limits Period Jitter (i.e. the maximum variation in clock cycle time from nominal) to 30ps. And as such, it limits Absolute Jitter (i.e. the maximum variation in clock rising edge from its nominal position) to 15ps. 5. The device can tolerated C2C Jitter greater than 60ps, up to a maximum of 200ps. However, when using a device from a particular speed grade, tKHKH (min) of that speed grade must be derated (increased) by half the difference between the actual C2C Jitter and 60ps. For example, if the actual C2C Jitter is 100ps, then tKHKH (min) for the -714 speed grade is derated to 1.42ns (1.4ns + 0.5*(100ps - 60ps)). 6. VDD slew rate must be < 0.1V DC per 50ns for PLL lock retention. PLL lock time begins once VDD and input clock are stable. 7. Parameter applies to CK. 8. Parameters apply to Q, and are referenced to CK. 9. Parameter specifies CK CQ timing. 10. Parameters apply to Q, QVLD and are referenced to CQ & CQ. 11. Parameter specifies CQ CQ timing. tKHKH (nom) is the nominal input clock cycle time applied to the device. 12. Parameters are not tested. They are guaranteed by design, and verified through extensive corner-lot characterization. Rev: 1.09 8/2015 15/26 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2014, GSI Technology Preliminary GS81313HD18/36GK-833/714/625 AC Timing Specifications (variable with device speed grade) Parameter Symbol –833 Min –714 Max Min –625 Units Notes Max Min Max 6.0 1.6 6.0 ns 1 Input Clock Timing Clk Cycle Time tKHKH 1.2 6.0 1.4 Input Setup, Hold, and Pulse Width Timing Input Valid to Clk High tIVKH 150 — 150 — 160 — ps 2 Clk High to Input Hold tKHIX 150 — 150 — 160 — ps 2 Input Pulse Width tIPW 200 — 200 — 200 — ps 2,3 Notes: All parameters are measured from the mid-point of the object signal to the mid-point of the reference signal. 1. Parameters apply to CK, CK, KD, KD. 2. Parameters apply to SA, and are referenced to CK. Parameters apply to R, W, and are referenced to CK. Parameters apply to D, and are referenced to KD & KD. 3. Parameter specifies input pulse width requirements for each individual address, control, and data input. Per-pin deskew must be performed, to center the valid window of each individual input around the clock edge that latches it, in order for these parameters to be relevant to the application. The parameter is not tested; it is guaranteed by design and verified through extensive corner-lot characterization. Rev: 1.09 8/2015 16/26 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2014, GSI Technology Preliminary GS81313HD18/36GK-833/714/625 Read and Write Timing Diagram Read Write Read NOP NOP Write Read Write Read Write NOP KD tKHKH tKHKL tKLKH tKHKH KD tIVKH D D21 tKHKDH D22 D23 D24 tIVKH tKHIX D41 D42 D43 D44 D61 tKHIX D62 D63 D64 D81 D82 D83 D84 tKHKDH CK tKHKH tKHKL tKLKH tKHKH CK tIVKH tKHIX SA A1 A2 A3 A4 A5 A6 A7 A8 tIVKH tKHIX R W tKHQX tKHQV Q Q11 Q12 Q13 Q14 Q31 Q32 Q33 Q34 Q51 Q52 Q53 QVLD tCQHQX tKHCQH tCQHQV tCQHQX tCQHQX tCQHQV tCQHQV CQ tCQHCQH CQ Rev: 1.09 8/2015 17/26 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2014, GSI Technology Preliminary GS81313HD18/36GK-833/714/625 JTAG Test Mode Description These devices provide a JTAG Test Access Port (TAP) and Boundary Scan interface using a limited set of IEEE std. 1149.1 functions. This test mode is intended to provide a mechanism for testing the interconnect between master (processor, controller, etc.), ECCRAM, other components, and the printed circuit board. In conformance with a subset of IEEE std. 1149.1, these devices contain a TAP Controller and multiple TAP Registers. The TAP Registers consist of one Instruction Register and multiple Data Registers. The TAP consists of the following four signals: Pin Pin Name I/O Description TCK Test Clock I Induces (clocks) TAP Controller state transitions. TMS Test Mode Select I Inputs commands to the TAP Controller. Sampled on the rising edge of TCK. TDI Test Data In I Inputs data serially to the TAP Registers. Sampled on the rising edge of TCK. TDO Test Data Out O Outputs data serially from the TAP Registers. Driven from the falling edge of TCK. Concurrent TAP and Normal ECCRAM Operation According to IEEE std. 1149.1, most public TAP Instructions do not disrupt normal device operation. In these devices, the only exceptions are EXTEST and SAMPLE-Z. See the Tap Registers section for more information. Disabling the TAP When JTAG is not used, TCK should be tied Low to prevent clocking the ECCRAM. TMS and TDI should either be tied High through a pull-up resistor or left unconnected. TDO should be left unconnected. JTAG DC Operating Conditions Parameter Symbol Min Max Units Notes JTAG Input High Voltage VTIH 0.75 * VDDQ VDDQ + 0.15 V 1 JTAG Input Low Voltage VTIL –0.15 0.25 * VDDQ V 1 JTAG Output High Voltage VTOH VDDQ – 0.2 — V 2, 3 JTAG Output Low Voltage VTOL — 0.2 V 2, 4 Notes: 1. Parameters apply to TCK, TMS, and TDI. 2. Parameters apply to TDO. 3. ITOH = –2.0 mA. 4. ITOL = 2.0 mA. Rev: 1.09 8/2015 18/26 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2014, GSI Technology Preliminary GS81313HD18/36GK-833/714/625 JTAG AC Timing Specifications Parameter Symbol Min Max Units TCK Cycle Time tTHTH 50 — ns TCK High Pulse Width tTHTL 20 — ns TCK Low Pulse Width tTLTH 20 — ns TMS Setup Time tMVTH 10 — ns TMS Hold Time tTHMX 10 — ns TDI Setup Time tDVTH 10 — ns TDI Hold Time tTHDX 10 — ns Capture Setup Time (Address, Control, Data, Clock) tCS 10 — ns Capture Hold Time (Address, Control, Data, Clock) tCH 10 — ns TCK Low to TDO Valid tTLQV — 10 ns TCK Low to TDO Hold tTLQX 0 — ns JTAG Timing Diagram tTHTL tTLTH tTHTH TCK tMVTH tTHMX TMS tDVTH tTHDX TDI tTLQV tTLQX TDO Rev: 1.09 8/2015 19/26 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2014, GSI Technology Preliminary GS81313HD18/36GK-833/714/625 TAP Controller The TAP Controller is a 16-state state machine that controls access to the various TAP Registers and executes the operations associated with each TAP Instruction. State transitions are controlled by TMS and occur on the rising edge of TCK. The TAP Controller enters the Test-Logic Reset state in one of two ways: 1. At power up. 2. When a logic 1 is applied to TMS for at least 5 consecutive rising edges of TCK. The TDI input receiver is sampled only when the TAP Controller is in either the Shift-IR state or the Shift-DR state. The TDO output driver is enabled only when the TAP Controller is in either the Shift-IR state or the Shift-DR state. TAP Controller State Diagram 1 Test-Logic Reset 0 0 Run-Test / Idle 1 Select DR-Scan 1 Select IR-Scan 0 0 1 1 Capture-DR Capture-IR 0 0 0 Shift-DR 1 1 Exit1-DR Exit1-IR 0 0 0 Pause-DR 1 0 Exit2-IR Update-DR Rev: 1.09 8/2015 0 20/26 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. 0 1 1 1 0 Pause-IR 1 Exit2-DR 0 Shift-IR 1 1 1 Update-IR 1 0 © 2014, GSI Technology Preliminary GS81313HD18/36GK-833/714/625 TAP Registers TAP Registers are serial shift registers that capture serial input data (from TDI) on the rising edge of TCK, and drive serial output data (to TDO) on the subsequent falling edge of TCK. They are divided into two groups: Instruction Registers (IR), which are manipulated via the IR states in the TAP Controller, and Data Registers (DR), which are manipulated via the DR states in the TAP Controller. Instruction Register (IR - 3 bits) The Instruction Register stores the various TAP Instructions supported by ECCRAM. It is loaded with the IDCODE instruction (logic 001) at power-up, and when the TAP Controller is in the Test-Logic Reset and Capture-IR states. It is inserted between TDI and TDO when the TAP Controller is in the Shift-IR state, at which time it can be loaded with a new instruction. However, newly loaded instructions are not executed until the TAP Controller has reached the Update-IR state. The Instruction Register is 3 bits wide, and is encoded as follows: Code (2:0) Instruction Description EXTEST Loads the logic states of all signals composing the ECCRAM I/O ring into the Boundary Scan Register when the TAP Controller is in the Capture-DR state, and inserts the Boundary Scan Register between TDI and TDO when the TAP Controller is in the Shift-DR state. Also transfers the contents of the Boundary Scan Register associated with output signals (Q, QVLD, CQ, CQ) directly to their corresponding output pins. However, newly loaded Boundary Scan Register contents do not appear at the output pins until the TAP Controller has reached the Update-DR state. Also disables all ODT. See the Boundary Scan Register description for more information. IDCODE Loads a predefined device- and manufacturer-specific identification code into the ID Register when the TAP Controller is in the Capture-DR state, and inserts the ID Register between TDI and TDO when the TAP Controller is in the Shift-DR state. See the ID Register description for more information. 010 SAMPLE-Z Loads the logic states of all signals composing the ECCRAM I/O ring into the Boundary Scan Register when the TAP Controller is in the Capture-DR state, and inserts the Boundary Scan Register between TDI and TDO when the TAP Controller is in the Shift-DR state. Also disables all ODT. Also forces Q output drivers to a High-Z state. See the Boundary Scan Register description for more information. 011 PRIVATE Reserved for manufacturer use only. 100 SAMPLE Loads the logic states of all signals composing the ECCRAM I/O ring into the Boundary Scan Register when the TAP Controller is in the Capture-DR state, and inserts the Boundary Scan Register between TDI and TDO when the TAP Controller is in the Shift-DR state. See the Boundary Scan Register description for more information. 101 PRIVATE Reserved for manufacturer use only. 110 PRIVATE Reserved for manufacturer use only. 111 BYPASS Loads a logic 0 into the Bypass Register when the TAP Controller is in the Capture-DR state, and inserts the Bypass Register between TDI and TDO when the TAP Controller is in the Shift-DR state. See the Bypass Register description for more information. 000 001 Rev: 1.09 8/2015 21/26 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2014, GSI Technology Preliminary GS81313HD18/36GK-833/714/625 Bypass Register (DR - 1 bit) The Bypass Register is one bit wide, and provides the minimum length serial path between TDI and TDO. It is loaded with a logic 0 when the BYPASS instruction has been loaded in the Instruction Register and the TAP Controller is in the Capture-DR state. It is inserted between TDI and TDO when the BYPASS instruction has been loaded into the Instruction Register and the TAP Controller is in the Shift-DR state. ID Register (DR - 32 bits) The ID Register is loaded with a predetermined device- and manufacturer-specific identification code when the IDCODE instruction has been loaded into the Instruction Register and the TAP Controller is in the Capture-DR state. It is inserted between TDI and TDO when the IDCODE instruction has been loaded into the Instruction Register and the TAP Controller is in the Shift-DR state. The ID Register is 32 bits wide, and is encoded as follows: See BSDL Model (31:12) GSI ID (11:1) Start Bit (0) XXXX XXXX XXXX XXXX XXXX 0001 1011 001 1 Bit 0 is the LSB of the ID Register, and Bit 31 is the MSB. When the ID Register is selected, TDI serially shifts data into the MSB, and the LSB serially shifts data out through TDO. Boundary Scan Register (DR - 129 bits) The Boundary Scan Register is equal in length to the number of active signal connections to the ECCRAM (excluding the TAP pins) plus a number of place holder locations reserved for functional and/or density upgrades. It is loaded with the logic states of all signals composing the ECCRAM’s I/O ring when the EXTEST, SAMPLE, or SAMPLE-Z instruction has been loaded into the Instruction Register and the TAP Controller is in the Capture-DR state. It is inserted between TDI and TDO when the EXTEST, SAMPLE, or SAMPLE-Z instruction has been loaded into the Instruction Register and the TAP Controller is in the Shift-DR state. Additionally, the contents of the Boundary Scan Register associated with the ECCRAM outputs (Q, QVLD, CQ, CQ) are driven directly to the corresponding ECCRAM output pins when the EXTEST instruction is selected. However, after the EXTEST instruction has been selected, any new data loaded into Boundary Scan Register when the TAP Controller is in the Shift-DR state does not appear at the output pins until the TAP Controller has reached the Update-DR state. The value captured in the boundary scan register for NU pins is determined by the external pin state. The value captured in the boundary scan register for NC pins is 0 regardless of the external pin state. The value captured in the Internal Cell (Bit 129) is 1. Output Driver State During EXTEST EXTEST allows the Internal Cell (Bit 129) in the Boundary Scan Register to control the state of Q drivers. That is, when Bit 129 = 1, Q drivers are enabled (i.e., driving High or Low), and when Bit 129 = 0, Q drivers are disabled (i.e., forced to High-Z state). See the Boundary Scan Register section for more information. ODT State During EXTEST and SAMPLE-Z ODT on all inputs is disabled during EXTEST and SAMPLE-Z. Rev: 1.09 8/2015 22/26 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2014, GSI Technology Preliminary GS81313HD18/36GK-833/714/625 Boundary Scan Register Bit Order Assignment The table below depicts the order in which the bits are arranged in the Boundary Scan Register. Bit 1 is the LSB and Bit 129 is the MSB. When the Boundary Scan Register is selected, TDI serially shifts data into the MSB, and the LSB serially shifts data out through TDO. Bit Pad Bit Pad Bit Pad Bit Pad Bit Pad 1 7L 29 12F 57 12W 85 1T 113 1C 2 7K 30 11G 58 10W 86 4R 114 3C 3 9L 31 13G 59 8V 87 2R 115 2B 4 9K 32 10G 60 9U 88 3P 116 4B 5 8J 33 12G 61 8T 89 1P 117 5A 6 7H 34 11H 62 9R 90 4P 118 6A 7 9H 35 13H 63 8P 91 2P 119 6B 8 7G 36 10J 64 9N 92 3N 120 6C 9 8G 37 12J 65 8M 93 1N 121 5D 10 9F 38 13K 66 6M 94 4M 122 6E 11 8E 39 13L 67 7N 95 2M 123 5F 12 7D 40 11L 68 5N 96 3L 124 6G 13 9D 41 12M 69 7P 97 1L 125 5H 14 8C 42 10M 70 6P 98 1K 126 6J 15 7B 43 13N 71 5R 99 2J 127 5K 16 8B 44 11N 72 6T 100 4J 128 5L 17 9B 45 12P 73 7U 101 1H 129 Internal 18 7A 46 10P 74 5U 102 3H 19 9A 47 13P 75 6V 103 2G 20 10B 48 11P 76 6W 104 4G 21 12B 49 12R 77 7Y 105 1G 22 11C 50 10R 78 4W 106 3G 23 13C 51 13T 79 2W 107 2F 24 10D 52 11T 80 3V 108 4F 25 12D 53 12U 81 1V 109 1E 26 11E 54 10U 82 4U 110 3E 27 13E 55 13V 83 2U 111 2D 28 10F 56 11V 84 3T 112 4D Rev: 1.09 8/2015 23/26 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2014, GSI Technology Preliminary GS81313HD18/36GK-833/714/625 260-Pin BGA Package Drawing (Package GK) 0.08 S C 0.22 S C A S B S Ø Ø Ø 0.50~Ø0.70(260x) 13 12 11 10 9 8 7 6 5 4 3 2 1 A B C D E F G H J K L M N P R T U V W Y 19.00 17.40 0.05 22.00 0.05 1.00 PIN #1 CORNER 13.20 0.05 B A 1.00 14.00 0.05 12.00 Rev: 1.09 8/2015 C 0.15 0.05 SEATING PLANE 0.40~0.60 0.51 REF C 4–R0.5 (MAX) 0.50 + 0.03 0.10 HEAT SPREADER // 1.09 REF C 2.10 + 0.2/–0.3 0.06 0.05(4X) Ball Pitch: 1.00 Substrate Thickness: Ball Diameter: 0.60 Mold Thickness: 0.51 — 24/26 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2014, GSI Technology Preliminary GS81313HD18/36GK-833/714/625 Ordering Information — GSI SigmaQuad-IIIe ECCRAM Org Part Number Type Package Speed (MHz) TA 8M x 18 GS81313HD18GK-833 SigmaQuad-IIIe B4 ROHS-Compliant 260-Pin BGA 833 C 8M x 18 GS81313HD18GK-714 SigmaQuad-IIIe B4 ROHS-Compliant 260-Pin BGA 714 C 8M x 18 GS81313HD18GK-625 SigmaQuad-IIIe B4 ROHS-Compliant 260-Pin BGA 625 C 8M x 18 GS81313HD18GK-833I SigmaQuad-IIIe B4 ROHS-Compliant 260-Pin BGA 833 I 8M x 18 GS81313HD18GK-714I SigmaQuad-IIIe B4 ROHS-Compliant 260-Pin BGA 714 I 8M x 18 GS81313HD18GK-625I SigmaQuad-IIIe B4 ROHS-Compliant 260-Pin BGA 625 I 4M x 36 GS81313HD36GK-833 SigmaQuad-IIIe B4 ROHS-Compliant 260-Pin BGA 833 C 4M x 36 GS81313HD36GK-714 SigmaQuad-IIIe B4 ROHS-Compliant 260-Pin BGA 714 C 4M x 36 GS81313HD36GK-625 SigmaQuad-IIIe B4 ROHS-Compliant 260-Pin BGA 625 C 4M x 36 GS81313HD36GK-833I SigmaQuad-IIIe B4 ROHS-Compliant 260-Pin BGA 833 I 4M x 36 GS81313HD36GK-714I SigmaQuad-IIIe B4 ROHS-Compliant 260-Pin BGA 714 I 4M x 36 GS81313HD36GK-625I SigmaQuad-IIIe B4 ROHS-Compliant 260-Pin BGA 625 I Note: C = Commercial Temperature Range. I = Industrial Temperature Range. Rev: 1.09 8/2015 25/26 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2014, GSI Technology Preliminary GS81313HD18/36GK-833/714/625 Revision History Rev. Code Types of Changes Format or Content GS81313HD1836GK_r1.05 — GS81313HD1836GK_r1.06 Content • Removed leaded BGA package support. GS81313HD1836GK_r1.07 Content • Miscellaneous cleanup. GS81313HD1836GK_r1.08 Content • • • • • • • GS81313HD1836GK_r1.09 Content • Updated speed bins to -833, -714, and -625. • Added input pulse width specs. Rev: 1.09 8/2015 Revisions • Initial public release. Increased VDD (max) to 1.35V. Added package thermal impedances. Added tKHKH (max) specs. Revised tKHKDH specs. Revised tKHQV, tKHQX, and tKHCQH specs. Revised tCQHQV and tCQHQX specs. Banner changed to “Preliminary”, to reflect ES status. 26/26 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2014, GSI Technology