AO4405

AO4405
30V P-Channel MOSFET
General Description
Product Summary
The AO4405 uses advanced trench technology to provide
excellent RDS(ON) with low gate charge. This device is
suitable for use as a load switch or in PWM applications.
ID (at VGS=-10V)
-30V
-6A
RDS(ON) (at VGS=-10V)
< 50mΩ
RDS(ON) (at VGS = -4.5V)
< 85mΩ
VDS
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current
C
Units
V
±20
V
-6
ID
TA=70°C
Maximum
-30
-5.1
A
IDM
-30
Avalanche Current C
IAS, IAR
17
A
Avalanche energy L=0.1mH C
EAS, EAR
14
mJ
VDS Spike
VSPIKE
-36
V
Pulsed Drain Current
Power Dissipation B
10µs
TA=25°C
PD
TA=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev.10.0: March 2014
3.1
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
W
2
RθJA
RθJL
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-55 to 150
Typ
31
59
16
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
Page 1 of 6
AO4405
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-30
-1
TJ=55°C
-5
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.4
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-30
nA
-2.4
V
33
50
50
70
VGS=-4.5V, ID=-4A
53
85
14
TJ=125°C
gFS
Forward Transconductance
VDS=-5V, ID=-6A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
Crss
Reverse Transfer Capacitance
Gate resistance
A
-0.8
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Rg
µA
±100
Static Drain-Source On-Resistance
Output Capacitance
Units
-1.9
VGS=-10V, ID=-6A
Coss
Max
V
VDS=-30V, VGS=0V
IGSS
RDS(ON)
Typ
VGS=0V, VDS=-15V, f=1MHz
S
V
-3.5
A
520
pF
100
pF
pF
Ω
7.5
11.5
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
9.2
11
nC
Qg(4.5V) Total Gate Charge
4.6
6
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=-10V, VDS=-15V, ID=-6A
3.5
mΩ
-1
65
VGS=0V, VDS=0V, f=1MHz
mΩ
1.6
nC
2.2
nC
7.5
ns
VGS=-10V, VDS=-15V, RL=2.5Ω,
RGEN=3Ω
5.5
ns
19
ns
tf
Turn-Off Fall Time
7
ns
trr
Body Diode Reverse Recovery Time
IF=-6A, dI/dt=100A/µs
11
Qrr
Body Diode Reverse Recovery Charge IF=-6A, dI/dt=100A/µs
5.3
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.10.0: March 2014
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Page 2 of 6
AO4405
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
40
-10V
-8V
VDS=-5V
-6V
35
25
30
-5V
20
-ID(A)
-ID (A)
25
VGS=-4.5V
20
15
15
10
-4V
125°C
10
25°C
5
5
VGS=-3.5V
0
0
0
1
2
3
4
0.5
5
80
1.5
2
2.5
3
3.5
4
4.5
5
5.5
Normalized On-Resistance
1.8
70
VGS=-4.5V
60
RDS(ON) (mΩ
Ω)
1
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
50
40
30
VGS=-10V
20
10
VGS=-10V
ID=-6A
1.6
1.4
17
5
VGS=-4.5V
ID=-4A2
10
1.2
1
0.8
0
2
4
6
8
10
0
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
120
1.0E+02
ID=-6A
1.0E+01
100
40
80
-IS (A)
RDS(ON) (mΩ
Ω)
1.0E+00
125°C
60
125°C
1.0E-01
25°C
1.0E-02
1.0E-03
40
1.0E-04
25°C
1.0E-05
20
2
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.10.0: March 2014
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AO4405
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
800
VDS=-15V
ID=-6A
700
8
Ciss
Capacitance (pF)
-VGS (Volts)
600
6
4
500
400
300
Coss
200
2
100
0
0
2
4
6
8
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
0
100.0
5
10
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
30
100.0
TA=25°C
TA=100°C
TA=150°C
10.0
TA=125°C
10.0
-ID (Amps)
-IAR (A) Peak Avalanche Current
Crss
0
10µs
100µs
RDS(ON)
limited
1ms
1.0
10ms
0.1
TJ(Max)=150°C
TA=25°C
10s
DC
0.0
1.0
0.01
1
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 9: Single Pulse Avalanche capability (Note C)
0.1
1
10
-VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
100
10000
TA=25°C
Power (W)
1000
100
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
Rev.10.0: March 2014
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Page 4 of 6
AO4405
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.10.0: March 2014
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Page 5 of 6
AO4405
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev.10.0: March 2014
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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Page 6 of 6