AO4302 30V N-Channel MOSFET 30 General Description Product Summary The AO4302 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=10V) 36 VDS 30V 23A RDS(ON) (at VGS=10V) < 4mΩ RDS(ON) (at VGS = 4.5V) < 5mΩ ESD Protected 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Units V ±20 V 23 ID TA=70°C Maximum 30 18 A 316 IDM Avalanche Current C IAS, IAR 49 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 120 mJ Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 0: February 2011 3.6 PD TA=70°C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 2.3 RθJA RθJL www.aosmd.com -55 to 150 Typ 27 52 11 °C Max 35 65 15 Units °C/W °C/W °C/W Page 1 of 6 AO4302 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions ID=250µA, VGS=0V Min Typ 30 36 VDS=30V, VGS=0V Units V 1 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.3 ID(ON) On state drain current VGS=10V, VDS=5V 316 TJ=55°C µA 5 ±10 1.8 2.3 3.2 4.0 4.8 6.0 VGS=4.5V, ID=18A 3.9 5.0 mΩ 1 V 5 A VGS=10V, ID=20A RDS(ON) Max Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=20A 120 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance V mΩ S 2310 2891 3470 pF 330 474 620 pF 150 256 360 pF 0.7 1.6 2.4 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 41 51.9 63 nC Qg(4.5V) Total Gate Charge 19 24.8 30 Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A nC 10.9 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 11 13.8 17 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 24 30.8 37 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω nC 7.5 7.0 ns 4.8 ns 41.5 ns 8.8 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: February 2011 www.aosmd.com Page 2 of 6 AO4302 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 10V 50 VDS=5V 50 4.5V 40 40 ID(A) ID (A) 3V 30 30 125°C 20 20 10 10 25°C VGS=2.5V 0 0 0 1 2 3 4 0 5 6 2 3 4 5 6 Normalized On-Resistance 2 5 RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 4 3 VGS=10V 2 1 1.8 VGS=10V ID=20A 1.6 1.4 1.2 VGS=4.5V ID=18A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 10 1.0E+02 ID=20A 1.0E+01 8 IS (A) RDS(ON) (mΩ Ω) 1.0E+00 125°C 6 4 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 2 25°C 1.0E-04 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: February 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AO4302 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 4000 Ciss 3000 Capacitance (pF) VGS (Volts) 3500 VDS=15V ID=20A 8 6 4 2500 2000 1500 Coss 1000 2 500 0 0 10 20 30 40 50 Qg (nC) Figure 7: Gate-Charge Characteristics 60 0 1000.0 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 25 1000.0 TA=25°C 100.0 TA=100°C 100.0 ID (Amps) IAR (A) Peak Avalanche Current Crss 0 TA=150°C TA=125°C 10.0 100µs RDS(ON) limited 1ms 10.0 10ms 1.0 100ms TJ(Max)=150°C TA=25°C 0.1 10s DC 0.0 1.0 1 0.01 10 100 1000 Time in avalanche, tA (µ µs) Figure 9: Single Pulse Avalanche capability (Note C) 0.1 1 10 VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 100 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) Rev 0: February 2011 www.aosmd.com Page 4 of 6 AO4302 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=65°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: February 2011 www.aosmd.com Page 5 of 6 AO4302 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0: February 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6