AOTF10B65M2 650V, 10A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Product Summary • Latest Alpha IGBT (α IGBT) technology • 650V breakdown voltage • Very fast and soft recovery freewheeling diode • High efficient turn-on di/dt controllability • Low VCE(sat) enables high efficiencies • Low turn-off switching loss and softness • Very good EMI behavior • High short-circuit ruggedness VCE IC (TC=100°C) 650V 10A VCE(sat) (TJ=25°C) 1.6V Applications • Motor Drives • Sewing Machines • Servo and General Purpose Inverters • Fan, Pumps, Vacuum Cleaner • Other Hard Switching Applications TO-220F C G C E G E AOTF10B65M2 Orderable Part Number Package Type AOTF10B65M2 TO220F Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Collector-Emitter Voltage V CE Gate-Emitter Voltage V GE Continuous Collector TC=25°C TC=100°C Current Pulsed Collector Current, Limited by TJmax Turn off SOA, VCE≤650V, Limited by TJmax Continuous Diode Forward Current TC=25°C TC=100°C Diode Pulsed Current, Limited by TJmax Short circuit withstanding time 1) VGE=15V, VCC≤400V, TJ≤150°C Power Dissipation TC=25°C TC=100°C Junction and Storage Temperature Range IC Form Minimum Order Quantity Tube 1000 AOTF10B65M2 650 Units V ±30 V 202) 102) I CM 30 A I LM 30 A IF 202) 102) A I FM 30 A t SC 5 µs PD T J , T STG 30 12 -55 to 150 Maximum lead temperature for soldering TL 300 purpose, 1/8" from case for 5 seconds Thermal Characteristics AOTF10B65M2 Parameter Symbol R θ JA 65 Maximum Junction-to-Ambient Maximum IGBT Junction-to-Case 4.2 R θ JC Maximum Diode Junction-to-Case R θ JC 5 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 2) TO220F IC follows TO220/TO263. Rev.1.0: April 2015 A www.aosmd.com W °C °C Units °C/W °C/W °C/W Page 1 of 9 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage IC=1mA, VGE=0V, TJ=25°C 650 - - V V CE(sat) VGE=15V, IC=10A Symbol VF Collector-Emitter Saturation Voltage VGE=0V, IC=10A Diode Forward Voltage V GE(th) Gate-Emitter Threshold Voltage VCE=5V, IC=1mA I CES Zero Gate Voltage Collector Current VCE=650V, VGE=0V TJ=25°C - 1.6 2 TJ=125°C - 1.86 - TJ=150°C - 1.95 - TJ=25°C - 1.6 2 TJ=125°C - 1.63 - TJ=150°C - 1.62 - - 5.1 - V V V TJ=25°C - - 10 TJ=125°C - - 500 TJ=150°C - - 1000 µA I GES Gate-Emitter leakage current VCE=0V, VGE=±30V - - ±100 nA g FS Forward Transconductance VCE=20V, IC=10A - 9 - S - 647 - pF - 82 - pF DYNAMIC PARAMETERS C ies Input Capacitance VGE=0V, VCC=25V, f=1MHz C oes Output Capacitance C res Reverse Transfer Capacitance - 25 - pF Qg Total Gate Charge - 24 - nC Q ge Gate to Emitter Charge - 5.5 - nC Q gc Gate to Collector Charge - 12 - nC I C(SC) Short circuit collector current - 70 - A VGE=0V, VCC=0V, f=1MHz Gate resistance Rg SWITCHING PARAMETERS, (Load Inductive, TJ=25°C) - 5.8 - Ω VGE=15V, VCC=520V, IC=10A VGE=15V, VCC=400V, tsc≤5us, TJ≤150°C t D(on) Turn-On DelayTime - 12 - ns tr Turn-On Rise Time - 16 - ns t D(off) Turn-Off Delay Time - 91 - ns tf Turn-Off Fall Time - 14 - ns E on Turn-On Energy - 0.18 - mJ TJ=25°C VGE=15V, VCC=400V, IC=10A, RG=30Ω E off Turn-Off Energy - 0.13 - mJ E total t rr Total Switching Energy - 0.31 - mJ Diode Reverse Recovery Time - 262 - Q rr Diode Reverse Recovery Charge - 0.5 - ns µC I rm Diode Peak Reverse Recovery Current SWITCHING PARAMETERS, (Load Inductive, TJ=150°C) - 4 - A t D(on) Turn-On DelayTime - 11 - ns tr Turn-On Rise Time - 17 - ns t D(off) Turn-Off Delay Time - 108 - ns tf Turn-Off Fall Time - 23 - ns E on Turn-On Energy - 0.2 - mJ E off Turn-Off Energy - 0.21 - mJ E total t rr Total Switching Energy - 0.41 - mJ - 261 - Q rr Diode Reverse Recovery Charge - 0.7 - ns µC I rm Diode Peak Reverse Recovery Current - 5.2 - A TJ=25°C IF=10A, di/dt=200A/µs, VCC=400V TJ=150°C VGE=15V, VCC=400V, IC=10A, RG=30Ω Diode Reverse Recovery Time TJ=150°C IF=10A, di/dt=200A/µs, VCC=400V THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: April 2015 www.aosmd.com Page 2 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 50 20V 20V 17V 15V 40 17V 40 15V VCE IC (A) IC (A) 13V 30 11V 20 13V 30 11V 20 9V 9V 10 10 VGE= 7V VGE=7V 0 0 0 1 2 3 4 5 6 0 7 30 2 4 5 6 7 30 25 20 -40°C 20 IF (A) 150°C 15 10 25°C 15 150°C 10 25°C 5 5 -40°C 0 0 3 6 9 12 15 0 0.5 VGE (V) Figure 3: Transfer Characteristic 1 1.5 2 2.5 3 VF (V) Figure 4: Diode Characteristic 5 3 4 2.5 20A 2 IC=20A 3 VSD (V) VCE(sat) (V) 3 VCE=20V 25 IC (A) 1 VCE (V) Figure 2: Output Characteristic (Tj=150°C) VCE (V) Figure 1: Output Characteristic (Tj=25°C) IC=10A 2 10A 1.5 5A 1 IF=1A 1 IC=5A 0.5 0 0 0 25 50 75 100 125 150 Temperature (°C) Figure 5: Collector-Emitter Saturation Voltage vs. Junction Temperature Rev.1.0: April 2015 www.aosmd.com 0 25 50 75 100 125 150 Temperature (°C) Figure 6: Diode Forward voltage vs. Junction Temperature Page 3 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 VCE=520V IC=10A 1000 Cies 100 Coes 10 Cres Capacitance (pF) VGE (V) 12 9 6 3 0 1 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 30 0 8 16 24 32 40 VCE (V) Figure 8: Capacitance Characteristic 50 Power Disspation (W) 40 30 20 10 0 25 50 75 100 125 150 TCASE (°C) Figure 10: Power Disspation as a Function of Case 1E-03 20 1E-04 1E-05 12 ICE(S) (A) Current rating IC (A) 16 8 VCE=650V 1E-06 VCE=520V 1E-07 4 1E-08 0 1E-09 25 50 75 100 125 150 Rev.1.0: April 2015 0 25 50 75 100 125 150 Temperature (°C) Figure 12: Diode Reverse Leakage Current vs. Junction Temperature TCASE (°C) Figure 11: Current De-rating www.aosmd.com Page 4 of 9 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 Td(off) Tf Td(on) Tr 1000 Switching Time (ns) 1000 Switching Time (ns) 10000 Td(off) Tf Td(on) Tr 100 10 1 100 10 1 5 8 11 14 17 0 20 IC (A) Figure 13: Switching Time vs. IC (Tj=150°C, VGE=15V, VCE=400V, Rg=30Ω) 10000 150 200 250 Rg (Ω) Figure 14: Switching Time vs. Rg (Tj=150°C, VGE=15V, VCE=400V, IC=10A) 25 50 300 6 5 VGE(TH) (V) Switching Time (ns) 100 7 Td(off) Tf Td(on) Tr 1000 50 100 4 3 10 2 1 1 25 50 75 100 125 150 TJ (°C) Figure 15: Switching Time vs.Tj (VGE=15V, VCE=400V, IC=10A, Rg=30Ω) Rev.1.0: April 2015 www.aosmd.com 0 75 100 125 150 TJ (°C) Figure 16: VGE(TH) vs. Tj Page 5 of 9 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.5 1.5 Eoff Eoff 1.2 Switching Energy (mJ) 1.2 SwitchIng Energy (mJ) Eon Eon Etotal 0.9 0.6 0.3 Etotal 0.9 0.6 0.3 0 0 5 8 11 14 17 20 0 IC (A) Figure 17: Switching Loss vs. IC (Tj=150°C, VGE=15V, VCE=400V, Rg=30Ω) 50 150 200 250 300 Rg (Ω) Figure 18: Switching Loss vs. Rg (Tj=150°C, VGE=15V, VCE=400V, IC=10A) 0.5 0.5 Eoff Eoff Switching Energy (mJ) Eon 0.4 Switching Energy (mJ) 100 Etotal 0.3 0.2 0.1 Eon 0.4 Etotal 0.3 0.2 0.1 0 0 25 50 75 100 125 150 TJ (°C) Figure 19: Switching Loss vs. Tj (VGE=15V, VCE=400V, IC=10A, Rg=30Ω) Rev.1.0: April 2015 www.aosmd.com 200 250 300 350 400 450 500 VCE (V) Figure 20: Switching Loss vs. VCE (Tj=150°C, VGE=15V, IC=10A, Rg=30Ω) Page 6 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 360 25 150°C 800 20 600 15 30 300 25 150°C Trr 25°C Qrr 400 Trr (ns) Irm (A) Qrr (nC) 240 20 25°C 180 15 S 1000 10 150°C 120 Irm 5 200 25°C 60 5 25°C 150°C 0 0 5 8 11 14 10 S 17 0 20 IF (A) Figure 21: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current (VGE=15V, VCE=400V, di/dt=200A/µs) 1000 8 11 14 17 20 IF (A) Figure 22: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current (VGE=15V, VCE=400V, di/dt=200A/µs) 360 30 800 0 5 30 300 24 25 150°C 150°C 400 20 25°C Trr 180 15 12 Irm 200 6 25°C 0 0 200 60 25°C 10 5 S 0 300 400 500 600 700 800 di/dt (A/µs) Figure 23: Diode Reverse Recovery Charge and Peak Current vs. di/dt (VGE=15V, VCE=400V, IF=10A) Rev.1.0: April 2015 150°C 120 150°C www.aosmd.com S 25°C Trr (ns) 18 Qrr Irm (A) Qrr (nC) 240 600 0 200 300 400 500 600 700 800 di/dt (A/µs) Figure 24: Diode Reverse Recovery Time and Softness Factor vs. di/dt (VGE=15V, VCE=400V, IF=10A) Page 7 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=4.2°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM 0.01 Single Pulse Ton 0.001 T 0.0001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM 0.01 Single Pulse Ton 0.001 0.0001 1E-06 T 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 26: Normalized Maximum Transient Thermal Impedance for Diode Rev.1.0: April 2015 www.aosmd.com Page 8 of 9 Figure A: Gate Charge Test Circuit & Waveforms Figure B: Inductive Switching Test Circuit & Waveforms Figure C: Diode Recovery Test Circuit & Waveforms Rev.1.0: April 2015 www.aosmd.com Page 9 of 9