AOTF10B60D2 600V, 10A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations. The copackaged soft diode is optimized to minimize losses in motor control applications. VCE IC (TC=100°C) 600V 10A VCE(sat) (TJ=25°C) 1.55V Top View C TO-220F G G C E E AOTF10B60D2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Collector-Emitter Voltage V CE Gate-Emitter Voltage V GE Continuous Collector TC=25°C TC=100°C CurrentA Pulsed Collector Current, Limited by TJmax I CM Turn off SOA, VCE ≤ 600V, Limited by TJmax I LM Continuous Diode Forward CurrentA TC=25°C TC=100°C IC IF AOTF10B60D2 600 Units V ±20 V 23B 10 A 20 A 20 A 23B 10 A Diode Pulsed Current, Limited by TJmax I FM 20 A Short circuit withstanding time VGE = 15V, VCE ≤ 400V, Delay between short circuits ≥ 1.0s, TC=25°C t SC 10 µs TC=25°C Power Dissipation TC=100°C Junction and Storage Temperature Range PD T J , T STG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL Thermal Characteristics Parameter Symbol R θ JA Maximum Junction-to-Ambient Maximum IGBT Junction-to-Case R θ JC Maximum Diode Junction-to-Case R θ JC Note A:With 50% duty cycle and 200µs pulse width Note B:IC limited by package limitation Rev.1.0: April 2014 www.aosmd.com 31.2 12.5 W -55 to 150 °C 300 °C AOTF10B60D2 65 4 Units °C/W °C/W 4 °C/W Page 1 of 9 AOTF10B60D2 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol Conditions STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage V CE(sat) VF V GE(th) I CES Min IC=1mA, VGE=0V, TJ=25°C VGE=15V, IC=5A Collector-Emitter Saturation Voltage VGE=0V, IC=5A Diode Forward Voltage VCE=600V, VGE=0V Zero Gate Voltage Collector Current Max Units V 600 - - TJ=25°C - 1.55 1.8 TJ=125°C - 1.78 - TJ=150°C - 1.85 - TJ=25°C - 1.46 1.75 TJ=125°C - 1.36 - TJ=150°C - 1.3 - - 6 - TJ=25°C - - 10 TJ=125°C - - 100 TJ=150°C - - 500 VCE=VGE, IC=1mA Gate-Emitter Threshold Voltage Typ V V V µA I GES Gate-Emitter Leakage Current VCE=0V, VGE=±20V - - ±100 nA g FS Forward Transconductance VCE=20V, IC=5A - 2.3 - S - 367 - pF - 34 - pF DYNAMIC PARAMETERS C ies Input Capacitance VGE=0V, VCE=25V, f=1MHz C oes Output Capacitance C res Reverse Transfer Capacitance - 1.47 - pF Qg Total Gate Charge - 9.4 - nC Q ge Gate to Emitter Charge VGE=15V, VCE=480V, IC=5A - 3.15 - nC Gate to Collector Charge Short circuit collector current, Max. 1000 short circuits, Delay between VGE=15V, VCE=400V, RG=60Ω I C(SC) short circuits ≥ 1.0s VGE=0V, VCE=0V, f=1MHz Rg Gate Resistance SWITCHING PARAMETERS, (Load Iductive, TJ=25°C) - 3.6 - nC - 21 - A - 3 - Ω t D(on) Turn-On DelayTime - 12 - ns tr Turn-On Rise Time - 15 - ns t D(off) Turn-Off Delay Time - 83 - ns tf Turn-Off Fall Time - 12 - ns Q gc TJ=25°C VGE=15V, VCE=400V, IC=5A, RG=60Ω, Parasitic Ιnductance=100nH E on Turn-On Energy - 0.14 - mJ E off Turn-Off Energy - 0.04 - mJ E total t rr Total Switching Energy - 0.18 - mJ Diode Reverse Recovery Time - 98 - Q rr Diode Reverse Recovery Charge - 0.23 - ns µC Diode Peak Reverse Recovery Current SWITCHING PARAMETERS, (Load Iductive, TJ=150°C) - 4.4 - A t D(on) Turn-On DelayTime - 10 - ns tr Turn-On Rise Time - 16 - ns t D(off) Turn-Off Delay Time - 108 - ns tf Turn-Off Fall Time - 16 - ns E on Turn-On Energy - 0.18 - mJ E off Turn-Off Energy - 0.09 - mJ E total t rr Total Switching Energy - 0.27 - mJ Diode Reverse Recovery Time - 166 - Q rr Diode Reverse Recovery Charge - 0.4 - ns µC I rm Diode Peak Reverse Recovery Current - 5.2 - A TJ=25°C IF=5A,dI/dt=200A/µs,VCE=400V I rm TJ=150°C VGE=15V, VCE=400V, IC=5A, RG=60Ω, Parasitic Inductance=100nH TJ=150°C IF=5A,dI/dt=200A/µs,VCE=400V THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: April 2014 www.aosmd.com Page 2 of 9 AOTF10B60D2 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 35 30 20V 20V 30 25 17V 17V 20 20 15V 15 13V IC (A) IC (A) 25 15V 15 13V 10 10 11V 11V 5 VGE= 7V 5 9V 0 VGE=7V 0 0 1 2 3 4 5 6 7 0 VCE(V) Fig 1: Output Characteristic (Tj=25°C ) 1 2 3 4 5 6 7 VCE(V) Fig 2: Output Characteristic (Tj=150°C ) 40 20 VCE=20V -40°C 15 35 -40°C 30 25°C 150°C 150°C 25 IF (A) IC (A) 9V 10 20 25°C 15 5 10 5 0 0 7 10 13 0.0 16 VGE(V) Fig 3: Transfer Characteristic VCE(sat) (V) Time (µ µS) IC=10A IC=5A 2 1 1.0 1.5 2.0 2.5 3.0 VF (V) Fig 4: Diode Characteristic 4 3 0.5 60 30 50 25 40 20 30 15 20 10 10 5 Current(A) 4 IC=2.5A 0 0 0 0 25 50 75 100 125 150 Temperature (°C) Fig 5: Collector-Emitter Saturation Voltage vs. Junction Temperature Rev.1.0: April 2014 www.aosmd.com 5 8 11 14 17 20 VGE (V) Fig 6: VGE vs. Short Circuit Time (VCE=400V,TC=25°C ) Page 3 of 9 AOTF10B60D2 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 1000 Cies VCE=480V IC=5A 12 Coes Capacitance (pF) VGE (V) 100 9 6 3 10 Cres 0 1 0 2 4 6 8 10 0 5 Qg(nC) Fig 7: Gate-Charge Characteristics 10 15 20 25 30 35 40 VCE(V) Fig 8: Capacitance Characteristic Ic (A) 100 10 1 10 35 100 VCE (V) Fig 10: Reverse Bias SOA (Tj=150°C,VGE=15V) 1,000 10 30 8 Current rating IC(A) Power Disspation (W) 25 20 15 10 5 0 6 4 2 0 25 50 75 100 125 150 TCASE(°C) Fig 11: Power Disspation as a Function of Case Rev.1.0: April 2014 www.aosmd.com 25 50 75 100 125 150 TCASE(°C) Fig 12: Current De-rating Page 4 of 9 AOTF10B60D2 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10,000 Td(off) Tf Td(on) Tr 100 10 Td(on) 1,000 Tr 100 10 1 1 0 3 6 9 12 IC (A) Figure 13: Switching Time vs. IC (Tj=150°C,VGE=15V,VCE=400V,Rg=60Ω Ω) 0 1000 100 200 300 400 500 Rg (Ω Ω) Figure 14: Switching Time vs. Rg (Tj=150°C,VGE=15V,VCE=400V,IC=5A) 600 10 Td(off) Tf Td(on) Tr 8 100 VGE(TH)(V) Switching Time (nS) Td(off) Tf Switching Time (nS) Switching Time (nS) 1000 6 4 10 2 1 0 0 100 150 TJ (°C) Figure 15: Switching Time vs.Tj ( VGE=15V,VCE=400V,IC=5A,Rg=60Ω Ω) Rev.1.0: April 2014 50 200 0 30 60 90 120 150 TJ (°C) Figure 16: VGE(TH) vs. Tj www.aosmd.com Page 5 of 9 AOTF10B60D2 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 0.7 0.6 Eoff Eoff Eon Etotal 0.5 Eon 0.5 Switching Energy (mJ) E,SwitchIng Energy (mJ) 0.6 0.4 0.3 0.2 Etotal 0.4 0.3 0.2 0.1 0.1 0 0.0 0 3 6 9 IC (A) Figure 17: Switching Loss vs. IC (Tj=150°C,VGE=15V,VCE=400V,Rg=60Ω Ω) 12 0 0.4 100 300 400 500 Rg (Ω Ω) Figure 18: Switching Loss vs. Rg (Tj=150°C,VGE=15V,VCE=400V,IC=5A) 600 0.4 Eoff Eoff Eon Eon 0.3 Etotal Switching Energ y (mJ) Switching Energy (mJ) 200 0.2 0.1 0 0.3 Etotal 0.2 0.1 0.0 0 25 75 100 125 150 TJ (°C) Figure 19: Switching Loss vs. Tj (VGE=15V,VCE=400V,IC=5A,Rg=60Ω Ω) Rev.1.0: April 2014 50 175 www.aosmd.com 200 250 300 350 400 450 VCE (V) Figure 20: Switching Loss vs. VCE (Tj=150°C,VGE=15V,IC=5A,Rg=60Ω Ω) 500 Page 6 of 9 AOTF10B60D2 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.E-04 2.2 15A 1.E-05 10A 1.7 VSD (V) ICE(S) (A) VCE=600V 1.E-06 VCE=400V 1.E-07 5A 13V 1.2 IF=1A 0.7 1.E-08 0.2 0 25 50 75 100 125 150 175 0 Temperature (°C ) Fig 21: Diode Reverse Leakage Current vs. Junction Temperature 600 150°C 500 25 50 75 100 125 150 175 Temperature (°C ) Fig 22: Diode Forward voltage vs. Junction Temperature 30 300 25 250 18 15 150°C 15 25°C 200 150 Irm 0 150°C 6 50 5 3 25°C 600 0 60 50 150°C 3 6 9 12 IS (A) Fig 24: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current (VGE=15V,VCE=400V, di/dt=200A/µ µs) 200 20 160 16 40 300 30 Irm(A) Qrr Trr (nS) 400 0 0 0 3 6 9 12 0 IF(A) Fig 23: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current (VGE=15V,VCE=400V, di/dt=200A/µ µs) Qrr (nC) 9 25°C S 25°C 500 12 Trr 100 10 150°C 100 Trr (nS) 300 200 S 20 Qrr Irm(A) Qrr (nC) 400 120 80 20 25°C 150°C Irm 100 10 100 200 40 0 4 0 0 300 400 500 600 700 800 900 di/dt (A/µ µS) Fig 25: Diode Reverse Recovery Charge and Peak Current vs. di/dt (VGE=15V,VCE=400V,IF=5A) Rev.1.0: April 2014 S 25°C 25°C 0 25°C 150°C 8 Trr S 200 12 150°C www.aosmd.com 100 200 300 400 500 600 700 800 900 di/dt (A/µ µS) Fig 26: Diode Reverse Recovery Time and Softness Factor vs. di/dt (VGE=15V,VCE=400V,IF=5A) Page 7 of 9 AOTF10B60D2 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=4°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 1E-06 Zθ JC Normalized Transient Thermal Resistance 10 1 1E-05 0.0001 0.001 0.01 0.1 Pulse Width (s) Figure 27: Normalized Maximum Transient Thermal Impedance for IGBT D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=4°C/W 1 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 28: Normalized Maximum Transient Thermal Impedance for Diode Rev.1.0: April 2014 www.aosmd.com Page 8 of 9 AOTF10B60D2 Rev.1.0: April 2014 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