AO4449 30V P-Channel MOSFET General Description Product Summary The AO4449 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V) -30V -7A RDS(ON) (at VGS=-10V) < 34mΩ RDS(ON) (at VGS = -4.5V) < 54mΩ VDS 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current C Units V ±20 V -7 ID TA=70°C Maximum -30 -5.5 A IDM -40 Avalanche Current C IAS, IAR 23 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 26 mJ Pulsed Drain Current Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 3: Nov 2011 3.1 PD TA=70°C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 2 RθJA RθJL www.aosmd.com -55 to 150 Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 6 AO4449 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 Typ Max Units V VDS=-30V, VGS=0V -1 TJ=55°C -5 µA VDS=0V, VGS= ±20V Gate-Body leakagetrench current The AO4449 uses advanced technology to provide excellent RDS(ON), and ultra-low low gate charge. ±100 This nAdevice is suitable for u VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.3 ID(ON) On state drain current VGS=-10V, VDS=-5V -40 -1.85 -2.4 21 34 31.5 38 VGS=-4.5V, ID=-5A 33 54 18 VGS=-10V, ID=-7A RDS(ON) Static Drain-Source On-Resistance TJ=125°C gFS Forward Transconductance VDS=-5V, ID=-7A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance A -0.8 DYNAMIC PARAMETERS Ciss Input Capacitance VGS=0V, VDS=-15V, f=1MHz V mΩ mΩ S -1 V -3.5 A 760 pF 140 pF 95 pF 3.2 5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 13.6 16 nC Qg(4.5V) Total Gate Charge 6.7 8 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-7A 1.5 2.5 nC 3.2 nC 8 ns 6 ns 17 ns 5 ns 15 ns nC VGS=-10V, VDS=-15V, RL=2.15Ω, RGEN=3Ω IF=-7A, dI/dt=100A/µs Body Diode Reverse Recovery Charge IF=-7A, dI/dt=100A/µs 9.7 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 3: Nov 2011 www.aosmd.com Page 2 of 6 AO4449 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 30 -10V -6V -5V -4.5V VDS=-5V 35 25 30 -ID(A) -ID (A) 20 -4V 25 20 15 -3.5V 15 10 10 125°C 5 VGS=-3V 5 0 0 0 1 2 3 4 5 1 50 2 2.5 3 3.5 4 4.5 5 1.8 Normalized On-Resistance 45 VGS=-4.5V 40 RDS(ON) (mΩ Ω) 1.5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 35 30 25 20 VGS=-10V 15 10 VGS=-10V ID=-7A 1.6 1.4 17 5 VGS=-4.5V ID=-5A2 10 1.2 1 0.8 0 5 10 15 20 0 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 80 1.0E+02 ID=-7A 1.0E+01 40 60 1.0E+00 125°C 40 -IS (A) RDS(ON) (mΩ Ω) 25°C 125°C 25°C 1.0E-01 1.0E-02 1.0E-03 20 25°C 1.0E-04 1.0E-05 0 2 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 3: Nov 2011 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AO4449 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 VDS=-15V ID=-7A 1000 Ciss Capacitance (pF) -VGS (Volts) 8 6 4 800 600 400 2 200 0 0 0 2 4 6 8 10 12 Qg (nC) Figure 7: Gate-Charge Characteristics Coss Crss 0 14 100.0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 10.0 TA=25°C TA=150°C TA=100°C -ID (Amps) -IAR (A) Peak Avalanche Current 100.0 1ms 1.0 10ms 0.1 TA=125°C 10µs 100µs RDS(ON) limited TJ(Max)=150°C TA=25°C 10s DC 0.0 10.0 0.01 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 9: Single Pulse Avalanche capability (Note C) 0.1 1 10 -VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 100 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) Rev 3: Nov 2011 www.aosmd.com Page 4 of 6 AO4449 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W The AO4449 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable fo 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) Rev 3: Nov 2011 www.aosmd.com Page 5 of 6 AO4449 AO4449 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 3: Nov 2011 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 6 of 6