AO3401 30V P-Channel MOSFET General Description Product Summary The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V) -30V -4.0A RDS(ON) (at VGS=-10V) < 50mΩ VDS RDS(ON) (at VGS =-4.5V) < 60mΩ RDS(ON) (at VGS=-2.5V) < 85mΩ SOT23 Top View Bottom View D D D G S G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 6: Feb. 2011 Steady-State Steady-State A 1.4 W 0.9 TJ, TSTG Symbol t ≤ 10s V -27 PD TA=70°C ±12 -3.2 IDM TA=25°C B Units V -4 ID TA=70°C C Maximum -30 RθJA RθJL www.aosmd.com -55 to 150 Typ 70 100 63 °C Max 90 125 80 Units °C/W °C/W °C/W Page 1 of 5 AO3401 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 -1 TJ=55°C -5 Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.5 ID(ON) On state drain current VGS=-10V, VDS=5V -27 Units µA ±100 nA -0.9 -1.3 V 41 50 62 75 VGS=-4.5V, ID=-3.7A 47 60 mΩ VGS=-2.5V, ID=-2A 60 85 mΩ 17 VGS=-10V, ID=-4.0A Static Drain-Source On-Resistance Max V VDS=-30V, VGS=0V IGSS RDS(ON) Typ TJ=125°C A mΩ gFS Forward Transconductance VDS=-5V, ID=-4.0A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current -2 A ISM Pulsed Body-Diode CurrentB -27 A -0.7 DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 4 S -1 V 645 pF 80 pF 55 pF 7.8 12 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 14 nC Qg(4.5V) Total Gate Charge 7 nC VGS=-10V, VDS=-15V, ID=-4.0A Qgs Gate Source Charge 1.5 nC Qgd Gate Drain Charge 2.5 nC tD(on) Turn-On DelayTime 6.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=-10V, VDS=-15V, RL=3.75Ω, RGEN=3Ω 3.5 ns 41 ns 9 ns trr Body Diode Reverse Recovery Time IF=-4.0A, dI/dt=100A/µs 11 Qrr Body Diode Reverse Recovery Charge IF=-4.0A, dI/dt=100A/µs 3.5 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 6: Feb. 2011 www.aosmd.com Page 2 of 5 AO3401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 20 10V VDS=-5V 4.5V 20 15 -ID(A) -ID (A) 15 -2.5V 10 10 125°C 5 25°C 5 VGS=-2.0V 0 0 0 1 2 3 4 0 5 100 1 1.5 2 2.5 3 Normalized On-Resistance 1.8 80 RDS(ON) (mΩ Ω) 0.5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=-2.5V 60 VGS=-4.5V 40 VGS=-10V 20 VGS=-10V ID=-4A 1.6 1.4 VGS=-4.5V 17 ID=-3.7A 1.2 VGS=-2.5V ID=-2A 1 5 2 10 0.8 0 2 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 150 1.0E+01 ID=-4A 130 1.0E+00 110 1.0E-01 90 -IS (A) RDS(ON) (mΩ Ω) 40 125°C 1.0E-02 125°C 1.0E-03 70 50 25°C 1.0E-04 25°C 1.0E-05 30 0 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 6: Feb. 2011 2 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO3401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1000 VDS=-15V ID=-4A 8 800 Capacitance (pF) -VGS (Volts) Ciss 6 4 600 400 2 200 0 0 0 5 10 Qg (nC) Figure 7: Gate-Charge Characteristics 15 Coss Crss 0 5 10 15 20 -VDS (Volts) Figure 8: Capacitance Characteristics 25 10000 100.0 TA=25°C 10µs RDS(ON) limited 100µs 1.0 1ms 10ms 0.1 1000 Power (W) -ID (Amps) 10.0 100 10 TJ(Max)=150°C TA=25°C 10s DC 1 0.0 0.00001 0.01 0.1 1 -VDS (Volts) 10 Zθ JA Normalized Transient Thermal Resistance 1 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 0.001 100 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=125°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 6: Feb. 2011 www.aosmd.com Page 4 of 5 AO3401 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 6: Feb. 2011 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 5 of 5