AOS Semiconductor Product Reliability Report AO4702/AO4702L, rev B Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: (408) 830-9742 www.aosmd.com Oct 28, 2005 1 This AOS product reliability report summarizes the qualification result for AO4702. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AO4702 passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. Table of Contents: I. II. III. IV. V. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation Quality Assurance Information I. Product Description: The AO4702 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky Diode is packaged in parallel to improve device performance in synchronous recitification applications, or H-bridge configurations. Standard Product AO4702 is Pb-free (meets ROHS & Sony 259 specifications). AO4702L is a Green Product ordering option. AO4702and AO4702L are electrically identical. Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Mosfet Schottky Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TA=25°C 11 A ID 9.3 Pulsed Drain Current IDM 50 Schottky reverse voltage Continuous Forward TA=25°C Current VKA 30 IF 4.4 TA=70°C TA=70°C V 3.2 A IFM 30 Pulsed Diode Forward Current TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range PD TJ, TSTG Thermal Characteristics: Mosfet Parameter Maximum Junction-tot ≤ 10s Ambient Maximum Junction-toSteadyAmbient State SteadyMaximum Junction-to-Lead State Symbol RθJA RθJL 3 3 2.1 2 -55 to 150 -55 to 150 W °C Typ Max Units 31 40 °C/W 59 75 °C/W 16 24 °C/W 2 Thermal Characteristics: Schottky Parameter Maximum Junction-tot ≤ 10s Ambient Maximum Junction-toSteadyAmbient State SteadyMaximum Junction-to-Lead State Symbol RθJA RθJL Typ Max Units 36 40 °C/W 67 75 °C/W 25 30 °C/W II. Die / Package Information: Process Package Type Lead Frame Die Attach Bond wire Mold Material Filler % (Spherical/Flake) Flammability Rating Backside Metallization Moisture Level AO4702 Standard sub-micron Low voltage N channel process 8 leads SOIC Copper with Solder Plate Ag epoxy Au 2mils Epoxy resin with silica filler 90/10 UL-94 V-0 Ti / Ni / Ag Up to Level 1 * AO4702L (Green Compound) Standard sub-micron Low voltage N channel process 8 leads SOIC Copper with Solder Plate Ag epoxy Au 2 mils Epoxy resin with silica filler 100/0 UL-94 V-0 Ti / Ni / Ag Up to Level 1* Note * based on info provided by assembler and mold compound supplier 3 III. Result of Reliability Stress for AO4702 (Standard) & AO4702L (Green) Test Item Test Condition Time Point Lot Attribution Total Sample size Solder Reflow Precondition Standard: 1hr PCT+3 cycle IR reflow@260 °c Green: 168hr 85°°c /85RH +3 cycle IR reflow@260 °c Temp = 150 C, Vgs=100% of Vgsmax 0hr Standard: 84 lots Green: 17 lots 13878 pcs HTGB HTRB HAST Pressure Pot Temperature Cycle Temp = 150 C, Vds=80% of Vdsmax 130 +/- 2 C, 85%, 33.3 psi, Vgs = 80% of Vgs max 121 C, 15+/-1 PSIG, RH=100% -65 to 150 deg C, air to air, 0.5hr per cycle 168 / 500 hrs 2 lots 1000 hrs (note A*) 168 / 500 hrs 2 lots 1000 hrs (note A*) 100 hrs Standard: 53 lots Green: 13 lots 96 hrs 250 / 500 cycles (note B**) Standard: 66 lots Green: 16 lots (note B**) Standard: 84 lots Green: 17 lots (note B**) DPA Internal Vision Cross-section X-ray CSAM 164 pcs Number of Failures 0 0 77+5 pcs / lot 164 pcs 0 77+5 pcs / lot 3630 pcs 0 50+5 pcs / lot 4510 pcs 0 50+5 pcs / lot 5555 pcs 0 50+5 pcs / lot NA 5 5 5 5 5 5 0 NA 5 5 0 Bond Integrity Room Temp 150°°C bake 150°°C bake 0hr 250hr 500hr 40 40 40 40 wires 40 wires 40 wires 0 Solderability 230°°C 5 sec 15 15 leads 0 Die shear 150°C 0hr 10 10 0 Note A: The HTGB and HTRB reliability data presents total of available AO4702 and AO4702L burn-in data up to the published date. Note B: The pressure pot, temperature cycle and HAST reliability data for AO4702 and AO4702L comes from the AOS generic green compound package qualification data. 4 IV. Reliability Evaluation FIT rate (per billion): 14 MTTF = 8154 years 500 hrs of HTGB, 150 deg C accelerated stress testing is equivalent to 15 years of lifetime at 55 deg C operating conditions (by applying the Arrhenius equation with an activation energy of 0.7eV and 60% of upper confidence level on the failure rate calculation). AOS reliability group also routinely monitors the product reliability up to 1000 hr at and performs the necessary failure analysis on the units failed for reliability test(s). The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size of the selected product (AO4702). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] 9 = 1.83 x 10 / [2 (164) (500) (258) + 2 (164) (1000) (258)] = 14 9 MTTF = 10 / FIT = 7.14 x 107hrs = 8154 years Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55C) Acceleration Factor [Af] = Exp [Ea / k ( 1/Tj u – 1/Tj s )] Acceleration Factor ratio list: Af 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C 258 87 32 13 5.64 2.59 1 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10 E-5V / K V. Quality Assurance Information Acceptable Quality Level for outgoing inspection: 0.1% for electrical and visual. Guaranteed Outgoing Defect Rate: < 25 ppm Quality Sample Plan: conform to Mil-Std-105D 5