AON7518 30V N-Channel MOSFET General Description Product Summary • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial Top View VDS 30V 24A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 8.8mΩ RDS(ON) (at VGS = 4.5V) < 14mΩ 100% UIS Tested 100% Rg Tested DFN 3x3 EP Bottom View D Top View 1 8 2 7 3 6 4 5 G S Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current C V A 90 14 IDSM TA=70°C ±20 19 IDM TA=25°C Units V 24 ID TC=100°C Maximum 30 A 11 Avalanche Current C IAS 28 A Repetitive avalanche energy L=0.1mH C TC=25°C EAS 39 mJ Power Dissipation B TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 0: Nov 2011 3.1 Steady-State Steady-State RθJA RθJC www.aosmd.com W 2 -55 to 150 TJ, TSTG Symbol t ≤ 10s W 9 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 23 PD Typ 30 60 4.5 °C Max 40 75 5.4 Units °C/W °C/W °C/W Page 1 of 6 AON7518 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1.3 ID(ON) On state drain current VGS=10V, VDS=5V 90 VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=15A 100 nA 1.8 2.5 V 7.3 8.8 10.8 13.4 11.2 14 A gFS Forward Transconductance VDS=5V, ID=20A 60 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 IGSS VGS=0V, VDS=15V, f=1MHz 0.5 mΩ mΩ S 1 V 24 A 1086 pF 436 pF 34 VGS=0V, VDS=0V, f=1MHz Units V 1 TJ=55°C Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V VGS(th) RDS(ON) Typ 1 pF 1.5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 15.6 22 nC Qg(4.5V) Total Gate Charge 6.9 9.7 nC Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=15V, ID=11A 2.9 nC 1.8 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=11A, dI/dt=100A/µs Qrr Body Diode Reverse Recovery Charge IF=11A, dI/dt=100A/µs 11.5 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 5 ns 2 ns 16 ns 2 ns 24.5 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Nov 2011 www.aosmd.com Page 2 of 6 AON7518 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 50 10V 4V 4.5V 60 30 3.5V ID(A) ID (A) VDS=5V 40 40 20 125°C 20 10 VGS=3V 25°C 0 0 0 1 2 3 4 1 5 Normalized On-Resistance VGS=4.5V 12 RDS(ON) (mΩ Ω) 2 2.5 3 3.5 4 1.6 15 9 6 VGS=10V 3 VGS=10V ID=20A 1.4 1.2 VGS=4.5V ID=15A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 40 1.0E+02 ID=20A 35 1.0E+01 40 30 1.0E+00 25 IS (A) RDS(ON) (mΩ Ω) 1.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 20 125°C 1.0E-01 25°C 1.0E-02 15 125°C 1.0E-03 10 5 1.0E-04 25°C 0 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: Nov 2011 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 1.2 Page 3 of 6 AON7518 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1800 1400 Capacitance (pF) VGS (Volts) 1600 VDS=15V ID=11A 8 6 4 Ciss 1200 1000 800 600 Coss 400 2 Crss 200 0 0 0 3 6 9 12 15 Qg (nC) Figure 7: Gate-Charge Characteristics 18 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 500 1000.0 10µs 100.0 TJ(Max)=150°C TC=25°C 400 10.0 100µs 1ms 1s DC 1.0 TJ(Max)=150°C TC=25°C 0.1 Power (W) ID (Amps) 10µs RDS(ON) 300 200 100 0.0 0 0.01 0.1 1 10 100 VDS (Volts) 0.00001 0.0001 Zθ JC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 0.001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=5.4°C/W 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: Nov 2011 www.aosmd.com Page 4 of 6 AON7518 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 Power Dissipation (W) IAR (A) Peak Avalanche Current 30 TA=25°C TA=100°C TA=150°C 20 10 TA=125°C 0 10 0 0.000001 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 100 125 TCASE (° °C) Figure 13: Power De-rating (Note F) 150 1000 30 100 20 Power (W) Current rating ID(A) TA=25°C 10 10 1 0 0 25 50 75 100 125 TCASE (° °C) Figure 14: Current De-rating (Note F) 0.0001 0.001 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 150 0.01 Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 40 RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: Nov 2011 www.aosmd.com Page 5 of 6 AON7518 AON7518 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0: Nov 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6