AOSMD AON6520

AON6520
30V N-Channel MOSFET
General Description
Product Summary
The AON6520 uses advanced trench technology to
provide excellent RDS(ON), low gate charge.This device is
suitable for use as a high side switch in SMPS and
general purpose applications.
ID (at VGS=10V)
VDS
30V
50A
RDS(ON) (at VGS=10V)
< 8.5mΩ
RDS(ON) (at VGS=4.5V)
< 11mΩ
100% UIS Tested
100% Rg Tested
DFN5X6
Top View
D
Top View
Bottom View
1
8
2
7
3
6
4
5
G
S
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current C
Avalanche Current
C
Avalanche energy L=0.05mH C
TC=25°C
Power Dissipation B
TA=25°C
Power Dissipation
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev 0: Aug 2011
IAS, IAR
35
A
EAS, EAR
31
mJ
31
Steady-State
Steady-State
W
12.5
1.9
RθJA
RθJC
www.aosmd.com
W
1.2
TJ, TSTG
Symbol
t ≤ 10s
A
9
PDSM
TA=70°C
A
11
PD
TC=100°C
V
140
IDSM
TA=70°C
±20
29
IDM
TA=25°C
Continuous Drain
Current
Units
V
50
ID
TC=100°C
Maximum
30
-55 to 150
Typ
24
53
3.4
°C
Max
30
64
4
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON6520
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
TJ=55°C
Gate-Body leakage current
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
1.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
140
100
nA
1.95
2.5
V
7
8.5
10
12
VGS=4.5V, ID=20A
8.5
11
mΩ
55
1
V
35
A
VGS=10V, ID=20A
Static Drain-Source On-Resistance
TJ=125°C
gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
5
Gate Threshold Voltage
Units
V
1
IGSS
Coss
Max
30
VDS=30V, VGS=0V
VGS(th)
RDS(ON)
Typ
A
0.72
mΩ
S
920
1150
1380
pF
VGS=0V, VDS=15V, f=1MHz
125
180
235
pF
60
105
150
pF
VGS=0V, VDS=0V, f=1MHz
0.55
1.1
1.65
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
16
20
24
nC
Qg(4.5V) Total Gate Charge
7.6
9.5
11.4
nC
2
2.7
3.2
nC
3
5
7
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS=10V, VDS=15V, ID=20A
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
7
8.7
10.5
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
11
13.5
16
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
6.5
ns
2
ns
17
ns
3.5
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Aug 2011
www.aosmd.com
Page 2 of 6
AON6520
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
140
10V
100
6V
VDS=5V
120
5V
7V
80
100
60
ID(A)
ID (A)
4.5V
80
4V
60
40
40
3.5V
20
125°C
20
VGS=3V
0
0
1
2
3
4
0
5
0.5
1
1.5
2
2.5
3
3.5
12
4.5
5
5.5
Normalized On-Resistance
1.8
10
VGS=4.5V
8
6
VGS=10V
4
2
VGS=10V
ID=20A
1.6
1.4
17
5
VGS=4.5V
ID=20A 2
1.2
10
1
0.8
0
5
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
25
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+02
ID=20A
1.0E+01
20
40
1.0E+00
15
125°C
IS (A)
125°C
RDS(ON) (mΩ
Ω)
4
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
RDS(ON) (mΩ
Ω)
25°C
25°C
1.0E-01
1.0E-02
10
1.0E-03
1.0E-04
5
25°C
1.0E-05
0
0.0
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Aug 2011
0.2
0.4
0.6
0.8
1.0
1.2
4
www.aosmd.com
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON6520
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1600
VDS=15V
ID=20A
8
1400
Ciss
Capacitance (pF)
VGS (Volts)
1200
6
4
1000
800
600
400
2
Coss
200
0
5
10
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
20
10µs
RDS(ON)
limited
10.0
100µs
1ms
DC
1.0
0.1
10ms
TJ(Max)=150°C
TC=25°C
30
TJ(Max)=150°C
TC=25°C
17
5
2
10
120
80
40
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.01
0.1
1
10
0
Pulse Width (s)
18Junction-toFigure 10: Single Pulse Power Rating
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Zθ JC Normalized Transient
Thermal Resistance
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
160
10µs
Power (W)
100.0
0.001
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
5
200
1000.0
ID (Amps)
Crss
0
0
40
RθJC=4°C/W
0.1
PD
Single Pulse
0.01
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Aug 2011
www.aosmd.com
Page 4 of 6
AON6520
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
35
TA=25°C
60
30
50
Power Dissipation (W)
IAR (A) Peak Avalanche Current
70
TA=150°C
40
TA=100°C
30
20
TA=125°C
10
25
20
15
10
5
0
0
0
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)
25
50
75
100
125
TCASE (°
°C)
Figure 13: Power De-rating (Note F)
10000
60
TA=25°C
50
1000
40
Power (W)
Current rating ID(A)
150
30
17
5
2
10
100
20
10
10
1
0
0
25
50
75
100
125
TCASE (°
°C)
Figure 14: Current De-rating (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
0.1
10 0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
0.00001
150
0.001
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=64°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: Aug 2011
www.aosmd.com
Page 5 of 6
AON6520
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0: Aug 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
www.aosmd.com
Page 6 of 6