AON7424 30V N-Channel MOSFET General Description Product Summary The AON7424 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=10V) VDS 30V 40A RDS(ON) (at VGS=10V) < 5.2mΩ RDS(ON) (at VGS = 4.5V) < 7.5mΩ ESD protected 100% UIS Tested 100% Rg Tested DFN 3x3 EP Bottom View Top View D Top View 1 8 2 7 3 6 4 5 G Pin 1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain CurrentG Pulsed Drain Current Continuous Drain Current C V A 140 18 IDSM TA=70°C ±20 31 IDM TA=25°C Units V 40 ID TC=100°C Maximum 30 A 15 Avalanche Current C IAS, IAR 45 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 101 mJ Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 1: Mar 2010 3.1 Steady-State Steady-State RθJA RθJC www.aosmd.com W 2 TJ, TSTG Symbol t ≤ 10s W 14 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 36 PD TC=100°C -55 to 150 Typ 30 60 2.8 °C Max 40 75 3.4 Units °C/W °C/W °C/W Page 1 of 6 AON7424 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Max 30 Units V VDS=30V, VGS=0V 1 TJ=55°C µA 5 ±10 µA 1.7 2.3 V 4.3 5.2 6.6 7.9 VGS=4.5V, ID=20A 6 7.5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.3 ID(ON) On state drain current VGS=10V, VDS=5V 140 VGS=10V, ID=20A RDS(ON) Typ Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=20A 55 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss mΩ mΩ S 1 V 40 A 2280 2860 3450 pF 280 405 530 pF 180 300 420 pF 0.8 1.6 2.5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 40 50 60 nC Qg(4.5V) Total Gate Charge 17 22 26.5 nC 8 9.8 12 nC 5 8.4 12 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 7 ns 12 ns 36 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 10 13 10 16 ns Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 22 28 34 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be u sed if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1: Mar 2010 www.aosmd.com Page 2 of 6 AON7424 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 100 10V 4.5V VDS=5V 80 60 4V ID(A) ID (A) 60 3.5V 40 40 20 125°C 20 25°C VGS=3V 0 0 0 1 2 3 4 0.5 5 1.5 2 2.5 3 3.5 4 4.5 1.8 Normalized On-Resistance 10 8 VGS=4.5V RDS(ON) (mΩ ) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 6 4 VGS=10V 2 0 VGS=10V ID=20A 1.6 1.4 VGS=4.5V ID=20A 1.2 1 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 18 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+02 ID=20A 15 1.0E+01 12 1.0E+00 9 IS (A) RDS(ON) (mΩ ) 40 125°C 1.0E-01 125°C 25°C 1.0E-02 6 3 1.0E-03 25°C 1.0E-04 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 1: Mar 2010 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON7424 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 4500 VDS=15V ID=20A 4000 3500 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 3000 2500 2000 1500 Coss 1000 2 500 0 10 20 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics 0 50 ID (Amps) RDS(ON) limited 100µs 1ms 10ms DC 1 0.1 160 10µs Power (W) 10µs 100 10 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 200 1000 TJ(Max)=150°C TC=25°C 17 5 2 10 120 80 40 TJ(Max)=150°C TC=25°C 0.01 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 Zθ JC Normalized Transient Thermal Resistance Crss 0 0 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 0.001 0.01 0.1 1 10 0 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=3.4°C/W 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 1: Mar 2010 www.aosmd.com Page 4 of 6 AON7424 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=25°C TA=100°C 100 TA=150°C 30 20 10 TA=125°C 10 0 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 0 50 10000 40 1000 25 50 75 100 125 TCASE (°C) Figure 13: Power De-rating (Note F) 150 Power (W) Current rating ID(A) TA=25°C 30 20 17 5 2 10 100 10 10 1 0.00001 0 0 25 50 75 100 125 Zθ JA Normalized Transient Thermal Resistance 10 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 0.1 0 18 TCASE (°C) Figure 14: Current De-rating (Note F) 10 0.001 150 40 RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 1: Mar 2010 www.aosmd.com Page 5 of 6 AON7424 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 1: Mar 2010 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6