AOTF8T50P

AOTF8T50P
500V,8A N-Channel MOSFET
General Description
Product Summary
• Trench Power AlphaMOS-II technology
• Low RDS(ON)
• Low Ciss and Crss
• High Current Capability
• RoHS and Halogen Free Compliant
VDS @ Tj,max
600V
IDM
32A
RDS(ON),max
< 0.81Ω
Qg,typ
13nC
Eoss @ 400V
2.5µJ
Applications
100% UIS Tested
100% Rg Tested
• General Lighting for LED and CCFL
• AC/DC Power supplies for Industrial, Consumer, and
Telecom
D
Top View
TO-220F
G
G
D
S
S
AOTF8T50P
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOTF8T50P
AOTF8T50PL
TO-220F Pb Free
TO-220F Green
Tube
Tube
1000
1000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
TC=25°C
Continuous Drain
Current
Avalanche Current C
TC=100°C
C
L=1mH
Repetitive avalanche energy
C
Single pulsed avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt J
TC=25°C
Power Dissipation B Derate above 25°C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
ID
±30
Units
V
V
8*
8*
5.4*
5.4*
A
IDM
32
IAR
8
A
EAR
32
mJ
EAS
421
50
15
mJ
dv/dt
PD
V/ns
-55 to 150
W
W/°C
°C
300
°C
38
0.3
TJ, TSTG
28
0.2
TL
Thermal Characteristics
Parameter
Symbol
RθJA
Maximum Junction-to-Ambient A,D
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
Rev.1.0: July 2014
AOTF8T50PL
500
VGS
Gate-Source Voltage
Pulsed Drain Current
AOTF8T50P
AOTF8T50P
AOTF8T50PL
Units
65
3.3
65
4.5
°C/W
°C/W
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Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
500
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V, TJ=150°C
600
ID=250µA, VGS=0V
0.47
VDS=500V, VGS=0V
1
10
Gate-Body leakage current
VDS=0V, VGS=±30V
VDS=5V, ID=250µA
RDS(ON)
VGS=10V, ID=4A
gFS
Forward Transconductance
VDS=40V, ID=4A
6.5
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.76
IS
ISM
±100
nA
5
V
0.6
0.81
Ω
1
V
Maximum Body-Diode Continuous Current
8
A
Maximum Body-Diode Pulsed Current C
32
A
Coss
Output Capacitance
Co(er)
Effective output capacitance, energy
related H
Crss
Effective output capacitance, time
related I
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=100V, f=1MHz
Gate Source Charge
S
905
pF
42
pF
31
pF
56
pF
3.5
pF
2
Ω
VGS=0V, VDS=0 to 400V, f=1MHz
VGS=0V, VDS=100V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
3
µA
3.9
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Co(tr)
V/ oC
VDS=400V, TJ=125°C
Gate Threshold Voltage
Static Drain-Source On-Resistance
IGSS
VGS(th)
V
13
VGS=10V, VDS=400V, ID=8A
19
nC
4.4
nC
Qgd
Gate Drain Charge
3.4
nC
tD(on)
Turn-On DelayTime
23
ns
tr
Turn-On Rise Time
33
ns
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=250V, ID=8A,
RG=25Ω
34
ns
tf
trr
Turn-Off Fall Time
21
ns
IF=8A,dI/dt=100A/µs,VDS=100V
340
Qrr
Body Diode Reverse Recovery Charge IF=8A,dI/dt=100A/µs,VDS=100V
3.5
ns
µC
Body Diode Reverse Recovery Time
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=3.75A, VDD=150V, RG=25Ω, Starting TJ=25°C.
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. ISD≤ID, di/dt≤200A/µs, VDD=400V, TJ≤TJ(MAX).
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: July 2014
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Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
20
VDS=40V
10V
-55°C
16
7V
10
ID(A)
ID (A)
12
6.5V
125°C
8
1
6V
25°C
4
VGS=5V
0
0.1
0
5
10
15
20
25
30
2
4
VDS (Volts)
Figure 1: On-Region Characteristics
Normalized On-Resistance
2.4
RDS(ON) (Ω)
8
10
3
3
VGS=10V
1.8
1.2
0.6
2.5
2
0
4
8
12
16
1
0.5
0
-100
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
1E+01
1.1
1E+00
IS (A)
1E+02
0.9
-50
0
50
100
200
125°C
1E-01
1E-02
0.8
150
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.3
1
VGS=10V
ID=4A
1.5
0
BVDSS (Normalized)
6
VGS(Volts)
Figure 2: Transfer Characteristics
25°C
1E-03
0.7
-100
-50
0
50
100
150
200
1E-04
TJ (°C)
Figure 5: Break Down vs. Junction Temperature
Rev.1.0: July 2014
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10000
VDS=400V
ID=8A
Ciss
1000
Capacitance (pF)
VGS (Volts)
12
9
6
100
Coss
Crss
10
3
0
1
0
5
10
15
20
25
0.1
1
10
100
5
10
4
8
3
Eoss
2
6
4
2
1
0
0
0
100
200
300
400
500
0
VDS (Volts)
Figure 9: Coss stored Energy
25
50
75
100
125
150
TCASE (°C)
Figure 10: Current De-rating (Note F)
100
100
10µs
RDS(ON)
limited
10
10µs
RDS(ON)
limited
10
100µs
1
1ms
DC
10ms
0.1s
0.1
100µs
ID (Amps)
ID (Amps)
1000
VDS (Volts)
Figure 8: Capacitance Characteristics
Current rating ID(A)
Eoss(uJ)
Qg (nC)
Figure 7: Gate-Charge Characteristics
1
1ms
DC
0.1
1s
TJ(Max)=150°C
TC=25°C
0.01
10ms
0.1s
1s
TJ(Max)=150°C
TC=25°C
0.01
1
10
100
1000
VDS(Volts)
Figure 11: Maximum Forward Biased Safe Operating
Area for TO-220F Pb Free (Note F)
Rev.1.0: July 2014
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1
10
100
1000
VDS(Volts)
Figure 12: Maximum Forward Biased Safe Operating
Area for TO-220F Green (Note F)
Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ZθJC Normalized Transient
Thermal Resistance
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3.3°C/W
0.1
PD
Single Pulse
0.01
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for TO-220F Pb Free (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=4.5°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for TO-220F Green (Note F)
Rev.1.0: July 2014
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Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.1.0: July 2014
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6