AOD4C60 600V,4A N-Channel MOSFET General Description Product Summary The AOD4C60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max 700 IDM 27A RDS(ON),max < 0.95Ω Qg,typ 14nC Eoss @ 400V 2.7µC 100% UIS Tested! 100% Rg Tested! TO252 DPAK Top View D Bottom View D D G G S S S G AOD4C60 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain CurrentB VGS TC=25°C TC=100°C Maximum 600 Units V ±30 V 4 ID 3.5 A Pulsed Drain Current C IDM 27 Avalanche Current C IAR 8.5 A Repetitive avalanche energy C EAR 36 mJ Single pulsed avalanche energy H MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds EAS 326 100 20 125 mJ V/ns 1 -50 to 150 W/ oC °C 300 °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F Rev.1.0 April 2013 dv/dt PD TJ, TSTG TL Symbol RθJA RθCS W Typical 45 Maximum 55 Units °C/W 0.7 0.5 1 °C/W °C/W RθJC www.aosmd.com Page 1 of 6 AOD4C60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS ID=250µA, VGS=0V, TJ=150°C 700 V ID=250µA, VGS=0V 0.57 V/ oC VDS=600V, VGS=0V 1 VDS=480V, TJ=125°C 10 Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=1.3A gFS Forward Transconductance VDS=40V, ID=2A VSD Diode Forward Voltage IS=1A,VGS=0V ±100 3 µA 4 5 nΑ V 0.78 0.95 Ω 1 V 4 0.74 S IS Maximum Body-Diode Continuous Current 4 A ISM Maximum Body-Diode Pulsed Current 27 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Co(er) Effective output capacitance, energy related I Crss Effective output capacitance, time related J Reverse Transfer Capacitance Rg Gate resistance Co(tr) 910 pF 41 pF 32 pF 55 pF VGS=0V, VDS=100V, f=1MHz 1.8 pF VGS=0V, VDS=0V, f=1MHz 4.2 Ω VGS=10V, VDS=480V, ID=4A 5.5 nC VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0 to 480V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg Qgs Gate Source Charge 14 18 nC Qgd Gate Drain Charge 2.9 nC tD(on) Turn-On DelayTime 24 ns 21 ns 39 ns 19 ns ns µC VGS=10V, VDS=300V, ID=4A, RG=25Ω tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=4A,dI/dt=100A/µs,VDS=100V 295 Qrr Body Diode Reverse Recovery Charge IF=4A,dI/dt=100A/µs,VDS=100V 3.6 A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. H. L=60mH, IAS=3.3A, VDD=150V, RG=10Ω, Starting TJ=25°C I. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS. J. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0 April 2013 www.aosmd.com Page 2 of 6 AOD4C60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 100 12 VDS=40V 10V -55°C 7V ID(A) ID (A) 10 9 6.5V 125°C 6 1 6V 3 25°C VGS=5.5V 0 0.1 0 5 10 15 20 25 VDS (Volts) Fig 1: On-Region Characteristics 30 2 2 6 8 VGS(Volts) Figure 2: Transfer Characteristics 10 Normalized On-Resistance 3 1.6 RDS(ON) (Ω ) 4 1.2 VGS=10V 0.8 0.4 2.5 VGS=10V ID=1.3A 2 1.5 1 0.5 0 0 0 1.5 -100 3 4.5 6 7.5 9 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.2 -50 0 50 100 150 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 200 1E+02 ID=30A 40 1E+00 1 IS (A) BVDSS (Normalized) 1E+01 1.1 125°C 125°C 1E-01 25°C 1E-02 0.9 25°C 1E-03 0.8 -100 1E-04 -50 0 50 100 150 200 TJ (oC) Figure 5: Break Down vs. Junction Temperature Rev.1.0 April 2013 www.aosmd.com 0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1 Page 3 of 6 AOD4C60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 15 VDS=480V ID=4A Ciss 1000 Capacitance (pF) VGS (Volts) 12 9 6 Coss 100 10 3 Crss 1 0 0 5 10 15 20 Qg (nC) Figure 7: Gate-Charge Characteristics 0.1 25 1 10 100 VDS (Volts) Figure 8: Capacitance Characteristics 100 6 5 ID (Amps) 4 3 Eoss 10µs RDS(ON) limited 10 Eoss(uJ) 1000 100µs 1 1ms DC 10ms 2 0.1 TJ(Max)=150°C TC=25°C 1 0.01 0 100 200 300 400 VDS (Volts) Figure 9: Coss stored Energy 500 1 600 150 5 120 4 Current rating ID(A) Power Dissipation (W) 0 90 60 30 10 100 VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 1000 50 150 3 2 1 0 0 0 25 50 75 100 125 150 TCASE (°C) Figure 11: Power De-rating (Note B) Rev.1.0 April 2013 www.aosmd.com 0 25 75 100 125 TCASE (°C) Figure 12: Current De-rating (Note B) Page 4 of 6 AOD4C60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 500 TJ(Max)=150°C TC=25°C TJ(Max)=150°C TA=25°C 400 Power (W) Power (W) 800 600 300 400 200 200 100 0 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 13: Single Pulse Power Rating Junction-toCase (Note F) 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-toAmbient (Note G) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=1°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note F) 10 100 Zθ JA Normalized Transient Thermal Resistance 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=55°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.001 Rev.1.0 April 2013 0.01 0.1 1 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) www.aosmd.com 100 1000 Page 5 of 6 AOD4C60 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev.1.0 April 2013 L Isd + Vdd trr dI/dt IRM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6