AOSMD AOD4C60

AOD4C60
600V,4A N-Channel MOSFET
General Description
Product Summary
The AOD4C60 is fabricated using an advanced high
voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC
applications. By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability this part can be
adopted quickly into new and existing offline power supply
designs.
VDS @ Tj,max
700
IDM
27A
RDS(ON),max
< 0.95Ω
Qg,typ
14nC
Eoss @ 400V
2.7µC
100% UIS Tested!
100% Rg Tested!
TO252
DPAK
Top View
D
Bottom View
D
D
G
G
S
S
S
G
AOD4C60
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
CurrentB
VGS
TC=25°C
TC=100°C
Maximum
600
Units
V
±30
V
4
ID
3.5
A
Pulsed Drain Current C
IDM
27
Avalanche Current C
IAR
8.5
A
Repetitive avalanche energy C
EAR
36
mJ
Single pulsed avalanche energy H
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
EAS
326
100
20
125
mJ
V/ns
1
-50 to 150
W/ oC
°C
300
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
Rev.1.0 April 2013
dv/dt
PD
TJ, TSTG
TL
Symbol
RθJA
RθCS
W
Typical
45
Maximum
55
Units
°C/W
0.7
0.5
1
°C/W
°C/W
RθJC
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AOD4C60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
600
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Zero Gate Voltage Drain Current
IDSS
Zero Gate Voltage Drain Current
IGSS
ID=250µA, VGS=0V, TJ=150°C
700
V
ID=250µA, VGS=0V
0.57
V/ oC
VDS=600V, VGS=0V
1
VDS=480V, TJ=125°C
10
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V, ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=1.3A
gFS
Forward Transconductance
VDS=40V, ID=2A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
±100
3
µA
4
5
nΑ
V
0.78
0.95
Ω
1
V
4
0.74
S
IS
Maximum Body-Diode Continuous Current
4
A
ISM
Maximum Body-Diode Pulsed Current
27
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Co(er)
Effective output capacitance, energy
related I
Crss
Effective output capacitance, time
related J
Reverse Transfer Capacitance
Rg
Gate resistance
Co(tr)
910
pF
41
pF
32
pF
55
pF
VGS=0V, VDS=100V, f=1MHz
1.8
pF
VGS=0V, VDS=0V, f=1MHz
4.2
Ω
VGS=10V, VDS=480V, ID=4A
5.5
nC
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0 to 480V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg
Qgs
Gate Source Charge
14
18
nC
Qgd
Gate Drain Charge
2.9
nC
tD(on)
Turn-On DelayTime
24
ns
21
ns
39
ns
19
ns
ns
µC
VGS=10V, VDS=300V, ID=4A,
RG=25Ω
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
IF=4A,dI/dt=100A/µs,VDS=100V
295
Qrr
Body Diode Reverse Recovery Charge IF=4A,dI/dt=100A/µs,VDS=100V
3.6
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting
the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=3.3A, VDD=150V, RG=10Ω, Starting TJ=25°C
I. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0 April 2013
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Page 2 of 6
AOD4C60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
100
12
VDS=40V
10V
-55°C
7V
ID(A)
ID (A)
10
9
6.5V
125°C
6
1
6V
3
25°C
VGS=5.5V
0
0.1
0
5
10
15
20
25
VDS (Volts)
Fig 1: On-Region Characteristics
30
2
2
6
8
VGS(Volts)
Figure 2: Transfer Characteristics
10
Normalized On-Resistance
3
1.6
RDS(ON) (Ω )
4
1.2
VGS=10V
0.8
0.4
2.5
VGS=10V
ID=1.3A
2
1.5
1
0.5
0
0
0
1.5
-100
3
4.5
6
7.5
9
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
-50
0
50
100
150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
200
1E+02
ID=30A
40
1E+00
1
IS (A)
BVDSS (Normalized)
1E+01
1.1
125°C
125°C
1E-01
25°C
1E-02
0.9
25°C
1E-03
0.8
-100
1E-04
-50
0
50
100
150
200
TJ (oC)
Figure 5: Break Down vs. Junction Temperature
Rev.1.0 April 2013
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0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1
Page 3 of 6
AOD4C60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
15
VDS=480V
ID=4A
Ciss
1000
Capacitance (pF)
VGS (Volts)
12
9
6
Coss
100
10
3
Crss
1
0
0
5
10
15
20
Qg (nC)
Figure 7: Gate-Charge Characteristics
0.1
25
1
10
100
VDS (Volts)
Figure 8: Capacitance Characteristics
100
6
5
ID (Amps)
4
3
Eoss
10µs
RDS(ON)
limited
10
Eoss(uJ)
1000
100µs
1
1ms
DC
10ms
2
0.1
TJ(Max)=150°C
TC=25°C
1
0.01
0
100
200
300
400
VDS (Volts)
Figure 9: Coss stored Energy
500
1
600
150
5
120
4
Current rating ID(A)
Power Dissipation (W)
0
90
60
30
10
100
VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
1000
50
150
3
2
1
0
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 11: Power De-rating (Note B)
Rev.1.0 April 2013
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0
25
75
100
125
TCASE (°C)
Figure 12: Current De-rating (Note B)
Page 4 of 6
AOD4C60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
500
TJ(Max)=150°C
TC=25°C
TJ(Max)=150°C
TA=25°C
400
Power (W)
Power (W)
800
600
300
400
200
200
100
0
0
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 13: Single Pulse Power Rating Junction-toCase (Note F)
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-toAmbient (Note G)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note F)
10
100
Zθ JA Normalized Transient
Thermal Resistance
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.001
Rev.1.0 April 2013
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
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100
1000
Page 5 of 6
AOD4C60
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+
VDC
-
VDC
DUT
Qgs
Vds
Qgd
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev.1.0 April 2013
L
Isd
+ Vdd
trr
dI/dt
IRM
Vdd
VDC
-
IF
Vds
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Page 6 of 6