AON6512

AON6512
30V N-Channel AlphaMOS
General Description
Product Summary
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Application
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
VDS
ID (at VGS=10V)
30V
150A
RDS(ON) (at VGS=10V)
< 1.7mΩ
RDS(ON) (at VGS = 4.5V)
< 2.4mΩ
100% UIS Tested
100% Rg Tested
DFN5X6
Top View
D
Top View
Bottom View
1
8
2
7
3
6
4
5
G
S
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
Avalanche Current
C
V
A
340
54
IDSM
TA=70°C
±20
115
IDM
TA=25°C
Continuous Drain
Current
Units
V
150
ID
TC=100°C
Maximum
30
A
43
IAS
70
A
Avalanche energy L=0.05mH C
EAS
123
mJ
VDS Spike
VSPIKE
36
V
100ns
TC=25°C
Power Dissipation
B
Power Dissipation
A
PD
TC=100°C
TA=25°C
Junction and Storage Temperature Range
Rev.1.0: March 2014
7.4
Steady-State
Steady-State
RθJA
RθJC
W
4.7
TJ, TSTG
Symbol
t ≤ 10s
W
33
PDSM
TA=70°C
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
83
-55 to 150
Typ
14
40
1.1
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°C
Max
17
55
1.5
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON6512
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Typ
30
1
TJ=55°C
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
µA
5
1
VGS=10V, ID=20A
TJ=125°C
VGS=4.5V, ID=20A
Units
V
VDS=30V, VGS=0V
VGS(th)
Max
1.5
100
nA
2
V
1.4
1.7
1.9
2.3
1.9
2.4
mΩ
mΩ
gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
1
VSD
Diode Forward Voltage
IS=85A,VGS=0V
0.87
1.3
V
IS
Maximum Body-Diode Continuous Current
85
A
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
85
S
V
3430
pF
1327
pF
175
pF
0.7
1.1
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
53
64
nC
Qg(4.5V) Total Gate Charge
25
30
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
f=1MHz
VGS=10V, VDS=15V, ID=20A
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
0.3
7.8
nC
10.3
nC
7.5
ns
5.0
ns
33.8
ns
tf
Turn-Off Fall Time
9.8
ns
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
22
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
58
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: March 2014
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Page 2 of 6
AON6512
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
VDS=5V
10V
80
60
80
60
ID(A)
ID (A)
4.5V
3V
125°C
40
40
20
20
25°C
VGS=2.5V
0
0
0
1
2
3
4
0
5
4
2
3
4
5
6
Normalized On-Resistance
1.6
3
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=4.5V
2
1
VGS=10V
ID=20A
1.4
17
1.2
5
VGS=4.5V
ID=20A2
10
1
VGS=10V
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
5
1.0E+02
ID=20A
1.0E+01
4
3
IS (A)
RDS(ON) (mΩ
Ω)
1.0E+00
125°C
125°C
1.0E-01
1.0E-02
2
25°C
1.0E-03
25°C
1
1.0E-04
1.0E-05
0
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: March 2014
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON6512
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
5000
4500
VDS=15V
ID=20A
4000
Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss
3500
3000
2500
2000
Coss
1500
1000
500
0
0
10
20
30
40
50
Qg (nC)
Figure 7: Gate-Charge Characteristics
60
0
1000.0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
280
RDS(ON)
limited
10µs
10.0
10µs
240
100µs
200
1ms
DC
10ms
1.0
30
TJ(Max)=150°C
TC=25°C
160
120
80
TJ(Max)=150°C
TC=25°C
0.1
Power (W)
100.0
ID (Amps)
Crss
0
40
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=1.5°C/W
1
PD
0.1
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: March 2014
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Page 4 of 6
AON6512
100
160
90
140
80
Current rating ID(A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
60
50
40
30
20
120
100
80
60
40
20
10
0
0
0
25
50
75
100
125
TCASE (°C)
Figure 12: Power De-rating (Note F)
150
0
25
50
75
100
125
TCASE (°C)
Figure 13: Current De-rating (Note F)
150
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=55°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: March 2014
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Page 5 of 6
AON6512
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.1.0: March 2014
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6