AON7758

AON7758
30V N-Channel AlphaMOS
General Description
Product Summary
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Integrated Schottky Diode (SRFET)
• Very Low RDS(ON) at 4.5V VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Application
VDS
30V
75A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 1.85mΩ
RDS(ON) (at VGS=4.5V)
< 2.4mΩ
100% UIS Tested
100% Rg Tested
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
DFN 3.3x3.3 EP
Bottom View
Top View
D
Top View
1
8
2
7
3
6
4
5
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
G
S
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
Avalanche Current
C
V
A
190
36
IDSM
TA=70°C
±12
59
IDM
TA=25°C
Continuous Drain
Current
Units
V
75
ID
TC=100°C
Maximum
30
A
29
IAS
62
A
Avalanche energy L=0.05mH C
EAS
96
mJ
VDS Spike
VSPIKE
36
V
Power Dissipation B
100ns
TC=25°C
PD
TC=100°C
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev.1.0: September 2013
4.2
Steady-State
Steady-State
RθJA
RθJC
W
2.7
TJ, TSTG
Symbol
t ≤ 10s
W
13.5
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
34
°C
-55 to 150
Typ
25
50
2.4
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Max
30
60
3.6
Units
°C/W
°C/W
°C/W
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AON7758
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=10mA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS=±12V
Gate Threshold Voltage
VDS=VGS, ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
100
1.2
VGS=10V, ID=20A
TJ=125°C
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
tD(on)
VGS=10V, VDS=15V, ID=20A
0.5
nA
2
V
1.85
2.85
2.4
mΩ
0.6
V
42
A
0.4
Diode Forward Voltage
±100
2.3
140
Forward Transconductance
VSD
mA
1.52
1.9
gFS
Output Capacitance
1.6
VGS=4.5V, ID=20A
VDS=5V, ID=20A
Units
V
0.5
TJ=55°C
VGS(th)
Max
30
VDS=30V, VGS=0V
IGSS
Coss
Typ
mΩ
S
5200
pF
860
pF
86
pF
1
1.5
Ω
73
100
nC
29
40
nC
14
nC
Gate Drain Charge
3.6
nC
Turn-On DelayTime
12
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
4
ns
47.5
ns
tf
Turn-Off Fall Time
3.5
ns
trr
Body Diode Reverse Recovery Time
Qrr
IF=20A, dI/dt=500A/µs
19.3
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
51.2
ns
nC
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: September 2013
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AON7758
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
80
VDS=5V
3V
60
VGS=2.5V
4.5V
10V
ID(A)
ID (A)
60
40
40
20
20
0
0
0
1
2
3
125°C
25°C
0
4
4
Normalized On-Resistance
VGS=4.5V
2
1
VGS=10V
3
4
VGS=10V
ID=20A
1.6
1.4
1.2
VGS=4.5V
ID=20A
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
6
1.0E+01
ID=20A
125°C
5
1.0E+00
4
1.0E-01
IS (A)
RDS(ON) (mΩ
Ω)
2
1.8
3
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
125°C
3
1.0E-02
25°C
1.0E-03
2
1
1.0E-04
25°C
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: September 2013
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON7758
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
6000
VDS=15V
ID=20A
Ciss
5000
Capacitance (pF)
VGS (Volts)
8
6
4
2
4000
3000
2000
Coss
1000
Crss
0
0
0
10
20
30
40
50
60
Qg (nC)
Figure 7: Gate-Charge Characteristics
70
80
0
30
10µs
10.0
100µs
1ms
10ms
DC
1.0
TJ(Max)=150°C
TC=25°C
0.1
TJ(Max)=150°C
TC=25°C
400
10µs
RDS(ON)
limited
Power (W)
ID (Amps)
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
500
1000.0
100.0
5
300
200
100
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=3.6°C/W
1
PD
0.1
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: September 2013
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Page 4 of 6
AON7758
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
30
Current rating ID(A)
Power Dissipation (W)
40
20
10
60
40
20
0
0
0
25
50
75
100
125
TCASE (°
°C)
Figure 12: Power De-rating (Note F)
150
0
25
50
75
100
125
TCASE (°
°C)
Figure 13: Current De-rating (Note F)
150
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=60°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: September 2013
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Page 5 of 6
AON7758
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev.1.0: September 2013
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6