AOTF12T60 600V,12A N-Channel MOSFET General Description Product Summary • Latest Trench Power AlphaMOS-II technology • Low RDS(ON) • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 700V IDM 48A RDS(ON),max < 0.52Ω Applications Qg,typ 33nC Eoss @ 400V 4.5µJ 100% UIS Tested 100% Rg Tested • General Lighting for LED and CCFL • AC/DC Power supplies for Industrial, Consumer, and Telecom Top View TO-220F D G AOTF12T60 G D S S Orderable Part Number Package Type Form Minimum Order Quantity AOTF12T60 AOTF12T60L TO-220F Pb Free TO-220F Green Tube Tube 1000 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter AOTF12T60 Symbol Drain-Source Voltage VDS VGS Gate-Source Voltage Continuous Drain Current TC=25°C TC=100°C AOTF12T60L 600 ±30 V 12* ID Units V 12* 9* 9* A Pulsed Drain Current C IDM 48 Avalanche Current C,J IAR 12 A Repetitive avalanche energy C,J EAR 72 mJ 607 50 5 mJ Single pulsed avalanche energy G EAS MOSFET dv/dt ruggedness dv/dt Peak diode recovery dv/dt TC=25°C PD Power Dissipation B Derate above 25oC Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering TL purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Symbol RθJA Maximum Junction-to-Ambient A,D Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev.2.0 October 2013 V/ns 50 35 W 0.4 0.3 -55 to 150 W/ oC °C 300 °C AOTF12T60 AOTF12T60L Units 65 2.5 65 3.6 °C/W °C/W www.aosmd.com Page 1 of 6 AOTF12T60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 700 V ID=250µA, VGS=0V 0.55 V/ oC VDS=600V, VGS=0V 1 VDS=480V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=6A gFS Forward Transconductance VDS=40V, ID=6A VSD Diode Forward Voltage IS=1A,VGS=0V IS ISM 4 5 nΑ V 0.42 0.52 Ω 1 V Maximum Body-Diode Continuous Current 12 A Maximum Body-Diode Pulsed Current C 48 A DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Co(er) Effective output capacitance, energy related H Crss Effective output capacitance, time related I Reverse Transfer Capacitance Rg Gate resistance Co(tr) ±100 µA Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr 13 0.73 S 1954 pF 76 pF 52 pF 97 pF VGS=0V, VDS=100V, f=1MHz 13 pF f=1MHz 3.6 Ω VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0 to 480V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg Qgs 3 33 VGS=10V, VDS=480V, ID=12A 50 nC 10 nC 9.5 nC 45 ns VGS=10V, VDS=300V, ID=12A, RG=25Ω 68 ns 76 ns 46 ns IF=12A,dI/dt=100A/µs,VDS=100V 566 Body Diode Reverse Recovery Charge IF=12A,dI/dt=100A/µs,VDS=100V 7.4 ns µC Body Diode Reverse Recovery Time A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=4.5A, VDD=150V, RG=25Ω, Starting TJ=25°C. H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS. I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS. J. L=1.0mH, VDD=150V, RG=25Ω, Starting TJ=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.0 October 2013 www.aosmd.com Page 2 of 6 AOTF12T60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 25 -55°C 10V 7V VDS=40V 20 10 6.5V 10 6V ID(A) ID (A) 15 125°C 1 5 25°C VGS=5.5V 0 0 5 10 15 20 25 0.1 30 2 VDS (Volts) Fig 1: On-Region Characteristics 6 8 10 VGS(Volts) Figure 2: Transfer Characteristics 1.0 Normalized On-Resistance 3 0.8 RDS(ON) (Ω) 4 VGS=10V 0.6 0.4 0.2 5 10 15 20 VGS=10V ID=6A 2 1.5 1 0.5 0 -100 0.0 0 2.5 25 -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1E+02 1.2 40 125°C 1E+00 IS (A) BVDSS (Normalized) 1E+01 1.1 1 1E-01 25°C 1E-02 0.9 1E-03 0.8 -100 1E-04 -50 0 50 100 150 200 TJ (°C) Figure 5:Break Down vs. Junction Temperature Rev.2.0 October 2013 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOTF12T60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 1000 Capacitance (pF) VGS (Volts) Ciss VDS=480V ID=12A 12 9 6 Coss 100 Crss 10 3 1 0 0 12 24 36 48 0.1 60 1 10 100 1000 VDS (Volts) Figure 8: Capacitance Characteristics 10 15 8 12 Current rating ID(A) Eoss(uJ) Qg (nC) Figure 7: Gate-Charge Characteristics 6 Eoss 4 2 9 6 3 0 0 0 100 200 300 400 500 0 600 25 50 75 100 125 VDS (Volts) Figure 9: Coss stored Energy 100 100 10µs 10µs RDS(ON) limited 10 RDS(ON) limited 10 100µs 1ms 1 10ms DC 100µs ID (Amps) ID (Amps) 150 TCASE (°C) Figure 10: Current De-rating (Note B) 1ms 1 10ms DC 0.1s 0.1 0.1s 0.1 1s TJ(Max)=150°C TC=25°C 1s TJ(Max)=150°C TC=25°C 0.01 0.01 1 10 100 1000 VDS (Volts) Figure 11: Maximum Forward Biased Safe Operating Area for AOTF12T60 (Note F) Rev.2.0 October 2013 www.aosmd.com 1 10 100 1000 VDS (Volts) Figure 12: Maximum Forward Biased Safe Operating Area for AOTF12T60L (Note F) Page 4 of 6 AOTF12T60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF12T60 (Note F) ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3.6°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF12T60L (Note F) Rev.2.0 October 2013 www.aosmd.com Page 5 of 6 AOTF12T60 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev.2.0 October 2013 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com Page 6 of 6