Datasheet

AOTF12T50P
500V,12A N-Channel MOSFET
General Description
Product Summary
• Latest Trench Power AlphaMOS-II technology
• Low RDS(ON)
• Low Ciss and Crss
• High Current Capability
• RoHS and Halogen Free Compliant
VDS @ Tj,max
600V
IDM
48A
RDS(ON),max
< 0.5Ω
Qg,typ
22nC
Eoss @ 400V
4µJ
Applications
100% UIS Tested
100% Rg Tested
• General Lighting for LED and CCFL
• AC/DC Power supplies for Industrial, Consumer, and
Telecom
TO-220F
D
G
D
S
G
S
AOTF12T50P
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOTF12T50P
AOTF12T50PL
TO-220F Pb Free
TO-220F Green
Tube
Tube
1000
1000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TC=25°C
TC=100°C
Pulsed Drain Current C
Avalanche Current C
AOTF12T50P
L=1mH
500
AOTF12T50PL
Units
V
±30
V
12*
ID
A
8*
IDM
48
IAR
12
A
Repetitive avalanche energy C
EAR
72
mJ
Single pulsed avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
EAS
480
50
5
mJ
dv/dt
PD
Rev.2.0: September 2014
43
33
0.3
0.26
TJ, TSTG
W
-55 to 150
°C
300
°C
TL
Thermal Characteristics
Parameter
Symbol
RθJA
Maximum Junction-to-Ambient A,D
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
V/ns
AOTF12T50P
AOTF12T50PL
Units
65
2.9
65
3.8
°C/W
°C/W
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Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
500
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V, TJ=150°C
600
ID=250µA, VGS=0V
0.47
VDS=500V, VGS=0V
1
10
Gate-Body leakage current
VDS=0V, VGS=±30V
VDS=5V, ID=250µA
RDS(ON)
VGS=10V, ID=6A
gFS
Forward Transconductance
VDS=40V, ID=6A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
ISM
±100
nA
5
V
0.39
0.5
Ω
1
V
Maximum Body-Diode Continuous Current
12
A
Maximum Body-Diode Pulsed Current C
48
A
Coss
Output Capacitance
Co(er)
Effective output capacitance, energy
related H
Crss
Effective output capacitance, time
related I
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=100V, f=1MHz
Gate Source Charge
10
0.74
S
1477
pF
63
pF
50
pF
90
pF
6.3
pF
2
Ω
VGS=0V, VDS=0 to 400V, f=1MHz
VGS=0V, VDS=100V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
3
µA
4
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Co(tr)
V/ oC
VDS=400V, TJ=125°C
Gate Threshold Voltage
Static Drain-Source On-Resistance
IGSS
VGS(th)
V
22
VGS=10V, VDS=400V, ID=12A
32
nC
8
nC
Qgd
Gate Drain Charge
5.5
nC
tD(on)
Turn-On DelayTime
37
ns
tr
Turn-On Rise Time
54
ns
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=250V, ID=12A,
RG=25Ω
46
ns
tf
trr
28
ns
Body Diode Reverse Recovery Time
IF=12A,dI/dt=100A/µs,VDS=100V
428
Qrr
Body Diode Reverse Recovery Charge IF=12A,dI/dt=100A/µs,VDS=100V
6.1
ns
µC
Turn-Off Fall Time
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The R qJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=4A, VDD=150V, RG=25Ω, Starting TJ=25°C.
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: September 2014
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Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
25
-55°C
10V
20
VDS=40V
8V
7V
10
ID(A)
ID (A)
15
6.5V
10
125°C
1
6V
5
25°C
VGS=5.5V
0
0.1
0
5
10
15
20
25
30
2
VDS (Volts)
Figure 1: On-Region Characteristics
8
10
3
Normalized On-Resistance
1.2
RDS(ON) (Ω)
6
VGS(Volts)
Figure 2: Transfer Characteristics
1.5
0.9
VGS=10V
0.6
0.3
2.5
0
5
10
15
20
VGS=10V
ID=6A
2
1.5
1
0.5
0
0
-100
25
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.3
1E+02
1.2
1E+01
1.1
1E+00
1
0.9
-50
0
50
100
200
125°C
1E-01
25°C
1E-02
0.8
150
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
IS (A)
BVDSS (Normalized)
4
1E-03
0.7
-100
-50
0
50
100
150
200
1E-04
TJ (°C)
Figure 5: Break Down vs. Junction Temperature
Rev.2.0: September 2014
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10000
1000
Capacitance (pF)
VGS (Volts)
Ciss
VDS=400V
ID=12A
12
9
6
3
0
100
Coss
10
Crss
1
0
7
14
21
28
35
0.1
10
100
1000
VDS (Volts)
Figure 8: Capacitance Characteristics
7.5
15
6
12
Current rating ID(A)
Eoss(uJ)
Qg (nC)
Figure 7: Gate-Charge Characteristics
1
4.5
Eoss
3
1.5
9
6
3
0
0
0
100
200
300
400
0
500
25
50
75
100
125
TCASE (°C)
Figure 10: Current De-rating (Note F)
VDS (Volts)
Figure 9: Coss stored Energy
100
100
10µs
RDS(ON)
limited
10
10µs
RDS(ON)
limited
10
100µs
1ms
1
10ms
DC
0.1s
0.1
1s
100µs
ID (Amps)
ID (Amps)
150
1ms
1
10ms
DC
0.1s
0.1
1s
TJ(Max)=150°C
TC=25°C
TJ(Max)=150°C
TC=25°C
0.01
0.01
1
10
100
1000
VDS(Volts)
Figure 11: Maximum Forward Biased Safe
Operating Area for TO-220F Pb Free (Note F)
Rev.2.0: September 2014
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1
10
100
1000
VDS(Volts)
Figure 12: Maximum Forward Biased Safe
Operating Area for TO-220F Green (Note F)
Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.9°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for TO-220F Pb Free (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3.8°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for TO-220F Green (Note F)
Rev.2.0: September 2014
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Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.2.0: September 2014
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6