AOK20B60D1

AOK20B60D1
600V, 20A Alpha IGBT TM with Diode
General Description
Product Summary
The Alpha IGBTTM line of products offers best-in-class
performance in conduction and switching losses, with
robust short circuit capability. They are designed for ease
of paralleling, minimal gate spike under high dV/dt
conditions and resistance to oscillations.The soft copackaged diode is targeted for minimal losses in Welding
machines, Solar Inverter and UPS applications.
VCE
IC (TC=100°C)
600V
20A
VCE(sat) (TC=25°C)
1.85V
Top View
C
TO-247
G
C
AOK20B60D1
E
E
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Collector-Emitter Voltage
V CE
AOK20B60D1
600
Units
V
Gate-Emitter Voltage
V GE
±20
V
VGE Spike
VSPIKE
24
V
500ns
T
Continuous Collector C=25°C
TC=100°C
Current
40
IC
20
Pulsed Collector Current, Limited by TJmax
I CM
Turn off SOA, VCE ≤ 600V, Limited by TJmax
I LM
Continuous Diode
Forward Current
TC=25°C
TC=100°C
Diode Pulsed Current, Limited by TJmax
74
A
74
A
20
IF
A
10
A
I FM
74
A
Short circuit withstanding time VGE = 15V, VCE ≤
t SC
400V, Delay between short circuits ≥ 1.0s,
TC=25°C
10
µs
TC=25°C
Power Dissipation
TC=100°C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum IGBT Junction-to-Case
Maximum Diode Junction-to-Case
Rev.6.0: May 2014
PD
T J , T STG
TL
Symbol
R θ JA
R θ JC
R θ JC
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167
83
W
-55 to 175
°C
300
°C
AOK20B60D1
40
0.9
Units
°C/W
°C/W
1.7
°C/W
Page 1 of 9
AOK20B60D1
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
Conditions
STATIC PARAMETERS
BV CES
Collector-Emitter Breakdown Voltage
V CE(sat)
VF
V GE(th)
I CES
Min
IC=1mA, VGE=0V, TJ=25°C
VGE=15V, IC=20A
Collector-Emitter Saturation Voltage
VGE=0V, IC=10A
Diode Forward Voltage
VCE=600V, VGE=0V
Zero Gate Voltage Collector Current
Max
Units
V
600
-
-
TJ=25°C
-
1.85
2.4
TJ=125°C
-
2.2
-
TJ=175°C
-
2.37
-
TJ=25°C
-
1.35
1.85
TJ=125°C
-
1.33
-
TJ=175°C
-
1.26
-
-
5.7
-
TJ=25°C
-
-
10
TJ=125°C
-
-
300
TJ=175°C
-
-
3000
VCE=5V, IC=1mA
Gate-Emitter Threshold Voltage
Typ
V
V
V
µA
I GES
Gate-Emitter leakage current
VCE=0V, VGE=±20V
-
-
±100
nA
g FS
Forward Transconductance
VCE=20V, IC=20A
-
7
-
S
-
984
-
pF
-
93
-
pF
DYNAMIC PARAMETERS
C ies
Input Capacitance
VGE=0V, VCE=25V, f=1MHz
C oes
Output Capacitance
C res
Reverse Transfer Capacitance
-
3.75
-
pF
Qg
Total Gate Charge
-
24.6
-
nC
Q ge
Gate to Emitter Charge
VGE=15V, VCE=480V, IC=20A
-
9.8
-
nC
Gate to Collector Charge
Short circuit collector current, Max.
1000 short circuits, Delay between
VGE=15V, VCE=400V, RG=25Ω
I C(SC)
short circuits ≥ 1.0s
Rg
Gate resistance
f=1MHz
SWITCHING PARAMETERS, (Load Inductive, TJ=25°C)
-
8.2
-
nC
-
74
-
A
-
2.5
-
Ω
t D(on)
Turn-On DelayTime
-
20
-
ns
tr
Turn-On Rise Time
-
37
-
ns
t D(off)
Turn-Off Delay Time
-
66
-
ns
tf
Turn-Off Fall Time
-
8
-
ns
Q gc
TJ=25°C
VGE=15V, VCE=400V, IC=20A,
RG=15Ω,
Parasitic Ιnductance=150nH
E on
Turn-On Energy
-
0.76
-
mJ
E off
Turn-Off Energy
-
0.18
-
mJ
E total
t rr
Total Switching Energy
-
0.94
-
mJ
Diode Reverse Recovery Time
-
107
-
Q rr
Diode Reverse Recovery Charge
-
0.43
-
ns
µC
Diode Peak Reverse Recovery Current
SWITCHING PARAMETERS, (Load Inductive, TJ=175°C)
-
6.5
-
A
t D(on)
Turn-On DelayTime
-
18
-
ns
tr
Turn-On Rise Time
-
27
-
ns
t D(off)
Turn-Off Delay Time
-
93
-
ns
tf
Turn-Off Fall Time
-
14
-
ns
E on
Turn-On Energy
-
0.83
-
mJ
E off
Turn-Off Energy
-
0.36
-
mJ
E total
t rr
Total Switching Energy
-
1.2
-
mJ
Diode Reverse Recovery Time
-
188
-
Q rr
Diode Reverse Recovery Charge
-
0.94
-
ns
µC
I rm
Diode Peak Reverse Recovery Current
-
9.8
-
A
TJ=25°C
IF=10A,dI/dt=200A/µs,VCE=400V
I rm
TJ=175°C
VGE=15V, VCE=400V, IC=20A,
RG=15Ω,
Parasitic Inductance=150nH
TJ=175°C
IF=10A,dI/dt=200A/µs,VCE=400V
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.6.0: May 2014
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Page 2 of 9
AOK20B60D1
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
20V
20V
70
17V
80
17V
60
15V
60
IC (A)
IC (A)
15V
13V
40
50
13V
40
30
11V
20
9V
11V
20
VGE= 7V
9V
10
0
VGE=7V
0
0
1
2
3
4
5
6
7
0
1
VCE(V)
Fig 1: Output Characteristic
(Tj=25°C )
2
3
4
5
6
7
VCE(V)
Fig 2: Output Characteristic
(Tj=175°C )
70
50
-40°C
VCE=20V
60
-40°C
25°C
40
175°C
40
30
IF (A)
IC (A)
50
30
25°C
20
20
10
10
0
175°C
0
4
7
10
13
16
0.0
0.5
VGE(V)
Fig 3: Transfer Characteristic
1.0
1.5
2.0
2.5
3.0
VF (V)
Fig 4: Diode Characteristic
8
5
IC=40A
7
3
VGE(TH)(V)
VCE(sat) (V)
4
IC=20A
2
6
5
4
1
IC=10A
3
0
2
0
25
50
75
100
125
150
175
Temperature (°C)
Fig 5: Collector-Emitter Saturation Voltage vs.
Junction Temperature
Rev.6.0: May 2014
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0
25
50
75
100
125
TJ (°C)
Figure 6: VGE(TH) vs. Tj
150
175
Page 3 of 9
AOK20B60D1
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10000
VCE=480V
IC=20A
12
Cies
9
Capacitance (pF)
VGE (V)
1000
6
3
Coes
100
10
0
Cres
1
0
5
10
15
20
25
30
0
Qg(nC)
Fig 7: Gate-Charge Characteristics
5
10
15
20
25
30
35
40
VCE(V)
Fig 8: Capacitance Characteristic
180
150
Power Disspation (W)
120
90
60
30
0
25
50
75
100
125
150
175
TCASE(°C)
Fig 10: Power Disspation as a Function of Case
40
35
Current rating IC(A)
30
25
20
15
10
5
0
25
50
75
100
125
150
175
TCASE(°C)
Fig 11: Current De-rating
Rev.6.0: May 2014
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Page 4 of 9
AOK20B60D1
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
Td(off)
Tf
Switching Time (nS)
1000
Switching Time (nS)
10000
Td(off)
Tf
Td(on)
Tr
100
10
Tr
100
10
1
1
0
10
20
30
40
IC (A)
Figure 12: Switching Time vs. IC
(Tj=175°C,VGE=15V,VCE=400V,Rg=15Ω
Ω)
1000
Switching Time (nS)
Td(on)
1000
50
0
40
80
120
Rg (Ω
Ω)
Figure 13: Switching Time vs. Rg
(Tj=175°C,VGE=15V,VCE=400V,IC=20A)
160
Td(off)
Tf
Td(on)
Tr
100
10
1
0
50
100
150
TJ (°C)
Figure 14: Switching Time vs.Tj
( VGE=15V,VCE=400V,IC=20A,Rg=15Ω
Ω)
Rev.6.0: May 2014
200
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Page 5 of 9
AOK20B60D1
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3
3
Eoff
Eoff
Eon
Eon
Switching Energy (mJ)
SwitchIng Energy (mJ)
4
Etotal
2
1
Etotal
2
1
0
0
0
10
20
30
40
IC (A)
Figure 15: Switching Loss vs. IC
(Tj=175°C,VGE=15V,VCE=400V,Rg=15Ω
Ω)
50
0
2
50
100
150
Rg (Ω
Ω)
Figure 16: Switching Loss vs. Rg
(Tj=175°C,VGE=15V,VCE=400V,IC=20A)
2
Eoff
Eoff
Eon
1.5
Eon
1.6
Etotal
Switching Energ y (mJ)
Switching Energy (mJ)
200
1
0.5
Etotal
1.2
0.8
0.4
0
0
0
100
150
TJ (°C)
Figure 17: Switching Loss vs. Tj
(VGE=15V,VCE=400V,IC=20A,Rg=15Ω
Ω)
Rev.6.0: May 2014
50
200
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200
250
300
350
400
450
VCE (V)
Figure 18: Switching Loss vs. VCE
(Tj=175°C,VGE=15V,IC=20A,Rg=15Ω
Ω)
500
Page 6 of 9
AOK20B60D1
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.E-03
2
1.E-04
1.6
20A
VCE=600V
VSD (V)
ICE(S) (A)
1.E-05
1.E-06
1.2
10A
13V
5A
0.8
1.E-07
VCE=400V
IF=1A
0.4
1.E-08
1.E-09
0
0
50
100
150
200
0
50
100
150
Temperature (°C )
Fig 20: Diode Forward voltage vs. Junction
Temperature
Temperature (°C )
Fig 19: Diode Reverse Leakage Current vs.
Junction Temperature
1400
70
175°C
1200
200
250
10
175°C
60
200
8
50
Trr
Qrr
600
30
400
100
Irm
25°C
175°C
10
0
5
0
10
15
20
25
IS (A)
Fig 22: Diode Reverse Recovery Time and Softness
Factor vs. Conduction Current
(VGE=15V,VCE=400V, di/dt=200A/µ
µs)
10
250
70
175°C
25°C
0
0
1400
2
S
5
10
15
20
25
0
IF(A)
Fig 21: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
(VGE=15V,VCE=400V, di/dt=200A/µ
µs)
1200
4
25°C
50
175°C
0
6
20
25°C
200
150
S
40
Trr (nS)
800
Irm(A)
Qrr (nC)
1000
60
200
8
175°C
Qrr
600
40
30
25°C
400
175°C
25°C
0
300
400 500 600 700 800 900
di/dt (A/µ
µS)
Fig 23: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
(VGE=15V,VCE=400V,IF=10A)
Rev.6.0: May 2014
175°C
10
0
200
4
50
25°C
0
100
Trr
100
20
Irm
200
6
150
S
25°C
2
S
800
Trr (nS)
50
Irm(A)
Qrr (nC)
1000
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100
200
300
0
400
500 600 700 800 900
di/dt (A/µ
µS)
Fig 24: Diode Reverse Recovery Time and Softness
Factor vs. di/dt
(VGE=15V,VCE=400V,IF=10A)
Page 7 of 9
AOK20B60D1
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.9°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
T
Single Pulse
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.7°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 26: Normalized Maximum Transient Thermal Impedance for Diode
Rev.6.0: May 2014
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Page 8 of 9
AOK20B60D1
Rev.6.0: May 2014
www.aosmd.com
Page 9 of 9